Patents by Inventor Shih-Jane Tsai

Shih-Jane Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heterojunction bipolar transistor structure
    Patent number: 7224005
    Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.
    Type: Grant
    Filed: September 3, 2004
    Date of Patent: May 29, 2007
    Assignee: Visual Photonics Epitaxy Co., Ltd.
    Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai
  • Heterojunction bipolar transistor structure
    Publication number: 20050051799
    Abstract: A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1?x, 0.0?x?1.0) and/or indium-gallium-arsenic-nitride (InyGa1?yAszN1?z, 0.0?y, z?1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.
    Type: Application
    Filed: September 3, 2004
    Publication date: March 10, 2005
    Inventors: Chao-Hsing Huang, Yu-Chung Chin, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai