Patents by Inventor Shih-Jang Lin

Shih-Jang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6958546
    Abstract: A new method and processing sequence is provided for the formation of solder bumps that are in contact with underlying aluminum contact pads. A patterned layer of negative photoresist is interposed between a patterned layer of PE Si3N4 and a patterned layer of polyamide insulator. The patterned negative photoresist partially overlays the aluminum contact pad and prevents contact between the layer of polyamide insulator and the aluminum contact pad. By forming this barrier no moisture that is contained in the polyamide insulator can come in contact with the aluminum contact pad, therefore no corrosion in the surface of the aluminum contact pad can occur.
    Type: Grant
    Filed: May 13, 2003
    Date of Patent: October 25, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Fu-Jier Fan, Cheng-Yu Chu, Kuo Wei Lin, Shih-Jang Lin, Yang-Tung Fran, Chiou-Shian Peng
  • Patent number: 6936923
    Abstract: A new method and processing sequence is provided for the creation of interconnect bumps. A layer of passivation is deposited over a contact pad and patterned, creating an opening in the layer of passivation that aligns with the contact pad. A layer of UBM metal is deposited over the layer of passivation, the layer of UBM is overlying the contact pad and limited to the immediate surroundings of the contact pad. The central surface of the layer of UBM is selectively electroplated after which a layer of solder or solder alloy is solder printed over the electroplated surface of the layer of UBM. A solder flux or paste is applied over the surface of the solder printed solder compound or solder alloy. Flowing of the solder or solder alloy creates the solder bump of the invention.
    Type: Grant
    Filed: May 16, 2002
    Date of Patent: August 30, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuo-Wei Lin, Cheng-Yu Chu, Yen-Ming Chen, Yang-Tung Fan, Fu-Jier Fan, Chiou Shian Peng, Shih-Jang Lin
  • Publication number: 20030199159
    Abstract: A new method and processing sequence is provided for the formation of solder bumps that are in contact with underlying aluminum contact pads. A patterned layer of negative photoresist is interposed between a patterned layer of PE Si3N4 and a patterned layer of polyamide insulator. The patterned negative photoresist partially overlays the aluminum contact pad and prevents contact between the layer of polyamide insulator and the aluminum contact pad. By forming this barrier no moisture that is contained in the polyamide insulator can come in contact with the aluminum contact pad, therefore no corrosion in the surface of the aluminum contact pad can occur.
    Type: Application
    Filed: May 13, 2003
    Publication date: October 23, 2003
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Fu-Jier Fan, Cheng-Yu Chu, Kuo Wei Lin, Shih-Jang Lin, Yang-Tung Fran, Chiou-Shian Peng
  • Patent number: 6586323
    Abstract: A new method and processing sequence is provided for the formation of solder bumps that are in contact with underlying aluminum contact pads. A patterned layer of negative photoresist is interposed between a patterned layer of PE Si3N4 and a patterned layer of polyamide insulator. The patterned negative photoresist partially overlays the aluminum contact pad and prevents contact between the layer of polyamide insulator and the aluminum contact pad. By forming this barrier no moisture that is contained in the polyamide insulator can come in contact with the aluminum contact pad, therefore no corrosion in the surface of the aluminum contact pad can occur.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: July 1, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Fu-Jier Fan, Cheng-Yu Chu, Kuo Wei Lin, Shih-Jang Lin, Yang-Tung Fan, Chiou-Shian Peng
  • Publication number: 20020127836
    Abstract: A new method and processing sequence is provided for the creation of interconnect bumps. A layer of passivation is deposited over a contact pad and patterned, creating an opening in the layer of passivation that aligns with the contact pad. A layer of UBM metal is deposited over the layer of passivation, the layer of UBM is overlying the contact pad and limited to the immediate surroundings of the contact pad. The central surface of the layer of UBM is selectively electroplated after which a layer of solder or solder alloy is solder printed over the electroplated surface of the layer of UBM. A solder flux or paste is applied over the surface of the solder printed solder compound or solder alloy. Flowing of the solder or solder alloy creates the solder bump of the invention.
    Type: Application
    Filed: May 16, 2002
    Publication date: September 12, 2002
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Kuo-Wei Lin, Cheng-Yu Chu, Yen-Ming Chen, Yang-Tung Fan, Fu-Jier Fan, Chiou Shian Peng, Shih-Jang Lin
  • Patent number: 6426281
    Abstract: A new method and processing sequence is provided for the creation of interconnect bumps. A layer of passivation is deposited over a contact pad and patterned, creating an opening in the layer of passivation that aligns with the contact pad. A layer of UBM metal is deposited over the layer of passivation, the layer of UBM is overlying the contact pad and limited to the immediate surroundings of the contact pad. The central surface of the layer of UBM is selectively electroplated after which a layer of solder or solder alloy is solder printed over the electroplated surface of the layer of UBM. A solder flux or paste is applied over the surface of the solder printed solder compound or solder alloy. Flowing of the solder or solder alloy creates the solder bump of the invention.
    Type: Grant
    Filed: January 16, 2001
    Date of Patent: July 30, 2002
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Kuo-Wei Lin, Cheng-Yu Chu, Yen-Ming Chen, Yang-Tung Fan, Fu-Jier Fan, Chiou-Shian Peng, Shih-Jang Lin