Abstract: A semiconductor structure includes a first tier, a redistribution circuit structure, and a second tier. The first tier includes at least one first die. The redistribution circuit structure is disposed on the first tier and electrically coupled to the at least one first die, where the redistribution circuit structure has a multi-layer structure and includes a vertical connection structure continuously extending from a first side of the redistribution circuit structure to a second side of the redistribution circuit structure, and the first side is opposite to the second side along a stacking direction of the first tier and the redistribution circuit structure. The second tier includes a plurality of second dies, and is disposed on and electrically coupled to the redistribution circuit structure.

Abstract: An optical film composite includes a brightness enhancement element and a light diffusion element, wherein the light diffusion element includes a substrate with a light diffusion layer on at least one side thereof, and wherein the light diffusion element has a haze of no less than 98% as measured according to JIS K7136 standard method.

Abstract: The present invention relates to an optical film composite, which comprises a brightness enhancement element and a light diffusion element, wherein the light diffusion element comprises a substrate with a light diffusion layer on at least one side thereof, wherein the light diffusion element has a haze of no less than 98% as measured according to JIS K7136 standard method.

Abstract: The present invention provides an optical element, which comprises: (a) a substrate, (b) a first surface on one side of the substrate wherein said first surface comprises a plurality of prism columnar structures with rounded peaks and the curvature radii of the rounded peaks are in the range from 3 ?m to 20 ?m, and (c) a second surface on the other side of the substrate wherein the second surface can be a plane surface or with concave-convex structures.