Abstract: Insulated gate semiconductor device (10) and a method of manufacturing the insulated gate semiconductor device (10). The insulated gate semiconductor device (10) includes an N-channel transistor (15) and a P-channel transistor (16). The N-channel transistor (15) has a gate electrode (35) that has a central portion (28) and two adjacent gate extensions (49, 52). Likewise the P-channel transistor (16) has a gate electrode (35') which has a central portion (29) and two adjacent gate extensions (53, 54). The gate extensions (49, 52, 53, 54) allow the formation of graded channel regions underneath the gate electrodes (35, 35') and adjacent to the source (57, 59) and drain (58, 62) regions by offsetting an LDD or a single heavily doped source/drain implant from channel regions which are covered by the gate extensions (49, 52 53, 54).

Abstract: Insulated gate semiconductor device (10) and a method of manufacturing the insulated gate semiconductor device (10). The insulated gate semiconductor device (10) includes an N-channel transistor (55) and a P-channel transistor (60). The N-channel transistor (55) has a gate electrode (22') that has a central portion (22) and gate electrode extensions (41) adjacent to the central portion (22). Likewise the P-channel transistor (60) has a gate electrode (24') that has a central portion (24) and gate electrode extensions (42) adjacent to the central portion (24). The gate electrode extensions (41, 42) are formed by filling openings (34, 36) with a gate electrode material. The openings are used for the formation of graded channel regions underneath the gate electrode extensions (41, 42).

Abstract: A semiconductor wafer (20) having integrated circuit dice (22), wafer conductors (42-47, 50-53), and wafer contact pads (38) formed thereon. The wafer conductors (42-47, 50-53) are used to transfer electrical signals to and from the integrated circuit dice (22) on semiconductor wafer (20) so that wafer level testing and burn-in can be performed on the integrated circuit dice (22). In accordance with one embodiment of the present, each wafer conductor (45, 52) is electrically coupled to the same bonding pad (78) on each integrated circuit dice (22). Each wafer conductor (42-47, 50-53) includes at least a portion of conductor (42-47) which overlies the upper surface of at least one integrated circuit dice (22).