Patents by Inventor Shih-Kai CHAN
Shih-Kai CHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240072203Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.Type: ApplicationFiled: November 6, 2023Publication date: February 29, 2024Applicants: SemiLEDs Corporation, SHIN-ETSU CHEMICAL CO., LTD.Inventors: Chen-Fu Chu, Shih-Kai Chan, Yi-Feng Shih, David Trung Doan, Trung Tri Doan, Yoshinori Ogawa, Kohei Otake, Kazunori Kondo, Keiji Ohori, Taichi Kitagawa, Nobuaki Matsumoto, Toshiyuki Ozai, Shuhei Ueda
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Publication number: 20240063339Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.Type: ApplicationFiled: October 26, 2023Publication date: February 22, 2024Applicants: SamiLEDs Corporation, SHIN-ETSU CHEMICAL. CO., LTD.Inventors: Chen-Fu Chu, SHIH-KAI CHAN, YI-FENG SHIH, DAVID TRUNG DOAN, TRUNG TRI DOAN, YOSHINORI OGAWA, KOHEI OTAKE, KAZUNORI KONDO, KEIJI OHORI, TAICHI KITAGAWA, NOBUAKI MATSUMOTO, TOSHIYUKI oZAI, SHUHEI UEDA
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Patent number: 11862754Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.Type: GrantFiled: May 10, 2022Date of Patent: January 2, 2024Assignees: SemiLEDs Corporation, Shin-Etsu Chemical Co., Ltd.Inventors: Chen-Fu Chu, Shih-Kai Chan, Yi-Feng Shih, David Trung Doan, Trung Tri Doan, Yoshinori Ogawa, Kohei Otake, Kazunori Kondo, Keiji Ohori, Taichi Kitagawa, Nobuaki Matsumoto, Toshiyuki Ozai, Shuhei Ueda
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Patent number: 11862755Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.Type: GrantFiled: July 20, 2022Date of Patent: January 2, 2024Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Chen-Fu Chu, Shih-Kai Chan, Yi-Feng Shih, David Trung Doan, Trung Tri Doan, Yoshinori Ogawa, Kohei Otake, Kazunori Kondo, Keiji Ohori, Taichi Kitagawa, Nobuaki Matsumoto, Toshiyuki Ozai, Shuhei Ueda
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Publication number: 20230018855Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate [30], and forming a plurality of die sized semiconductor structures [32] on the substrate [30]. The method also includes the steps of providing a receiving plate [42] having an elastomeric polymer layer [44], placing the substrate [30] and the receiving plate [42] in close proximity with a gap [101] therebetween, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate [30] to the semiconductor layer [50] at an interface with the substrate [30] to lift off the semiconductor structures [32] through the gap [101] onto the elastomeric polymer layer [44]. During the laser lift-off (LLO) process the elastomeric polymer layer [44] functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures [32] in place on the receiving plate [42].Type: ApplicationFiled: August 3, 2022Publication date: January 19, 2023Applicants: SemiLEDs Corporation, SHIN-ETSU CHEMICAL CO., LTD.Inventors: CHEN-FU CHU, SHIH-KAI CHAN, YI-FENG SHIH, DAVID TRUNG DOAN, TRUNG TRI DOAN, YOSHINORI OGAWA, KOHEI OTAKE, KAZUNORI KONDO, KEIJI OHORI, TAICHI KITAGAWA, NOBUAKI MATSUMOTO, TOSHIYUKI OZAI, SHUHEI UEDA, JUNYA ISHIZAKI
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Publication number: 20220359785Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Applicants: SemiLEDS Corporation, Shin-Etsu Chemical Co., Ltd.Inventors: Chen-Fu Chu, Shih-Kai Chan, Yi-Feng Shih, David Trung Doan, Trung Tri Doan, Yoshinori Ogawa, Kohei Otake, Kazunori Kondo, Keiji Ohori, Taichi Kitagawa, Nobuaki Matsumoto, Toshiyuki Ozai, Shuhei Ueda
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Publication number: 20220320366Abstract: A method for fabricating semiconductor light emitting devices (LEDs) includes forming a plurality of light emitting diode (LED) structures having sidewall P-N junctions on a growth substrate, and forming an isolation layer on the light emitting diode (LED) structures having corners at intersections of the epitaxial structures with the growth substrate. The method also includes forming an etchable covering channel layer on the isolation layer, forming a patterning protection layer on the covering channel layer, forming etching channels in the covering channel layer using a first etching process, and removing the corners of the isolation layer by etching the isolation layer using a second etching process. Following the second etching process the isolation layer covers the sidewall P-N junctions. The method can also include bonding the growth substrate to a carrier and separating the growth substrate from the light emitting diode (LED) structures using a laser lift off (LLO) process.Type: ApplicationFiled: February 16, 2022Publication date: October 6, 2022Applicants: SemiLEDs Corporation, Shin-Etsu Chemical Co., Ltd.Inventors: CHEN-FU CHU, SHIH-KAI CHAN, YI-FENG SHIH, TRUNG TRI DOAN, DAVID TRUNG DOAN, YOSHINORI OGAWA, KAZUNORI KONDO, TOSHIYUKI OZAI, NOBUAKI MATSUMOTO, TAICHI KITAGAWA
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Publication number: 20220271198Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.Type: ApplicationFiled: May 10, 2022Publication date: August 25, 2022Applicants: SemiLEDs Corporation, SHIN-ETSU CHEMICAL CO., LTD.Inventors: Chen-Fu Chu, SHIH-KAI CHAN, YI-FENG SHIH, DAVID TRUNG DOAN, TRUNG TRI DOAN, YOSHINORI OGAWA, KOHEl OTAKE, KAZUNORI KONDO, KEIJI OHORI, TAICHI KITAGAWA, NOBUAKI MATSUMOTO, TOSHIYUKI OZAi, SHUHEI UEDA
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Patent number: 11417799Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.Type: GrantFiled: August 7, 2020Date of Patent: August 16, 2022Assignees: SemiLEDs Corporation, Shin-Etsu Chemical Co., Ltd.Inventors: Chen-Fu Chu, Shih-Kai Chan, Yi-Feng Shih, David Trung Doan, Trung Tri Doan, Yoshinori Ogawa, Kohei Otake, Kazunori Kondo, Keiji Ohori, Taichi Kitagawa, Nobuaki Matsumoto, Toshiyuki Ozai, Shuhei Ueda
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Publication number: 20210066547Abstract: A semiconductor component for fabricating semiconductor structures includes a plate having an elastomeric polymer layer thereon and at least one semiconductor structure adhesively attached to the elastomeric polymer layer. A semiconductor structure includes a first semiconductor layer and a second semiconductor layer with an active layer therebetween. The semiconductor structure also includes a plurality of mesas including at least one shorting mesa and at least one non-shorting mesa physically connected to the first semiconductor layer. A method for fabricating semiconductor structures includes the steps of: forming a plurality of semiconductor layer structures on the substrate, forming an elastomeric polymer layer on a receiving plate and attaching the elastomeric polymer layer to the semiconductor structures, and separating the semiconductor structures from the substrate with the semiconductor structures attached to the receiving plate.Type: ApplicationFiled: July 23, 2020Publication date: March 4, 2021Applicant: TSLC CORPORATIONInventors: Trung Tri Doan, CHEN-FU CHU, SHIH-KAI CHAN, DAVID TRUNG DOAN, YI-FENG SHIH
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Publication number: 20210066541Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.Type: ApplicationFiled: August 7, 2020Publication date: March 4, 2021Applicants: SemiLEDs Corporation, SHIN-ETSU CHEMICAL CO., LTD.Inventors: Chen-Fu Chu, Shih-Kai CHAN, Yi-Feng SHIH, David Trung DOAN, Trung Tri DOAN, Yoshinori OGAWA, Kohei OTAKE, Kazunori KONDO, Keiji OHORI, Taichi KITAGAWA, Nobuaki MATSUMOTO, Toshiyuki OZAI, Shuhei UEDA