Abstract: A semiconductor device includes a substrate, a semiconductor layer, a doped region, a device region, a first isolation structure, a second isolation structure and a terminal. The semiconductor layer is disposed over the substrate. The doped region is disposed in the semiconductor layer. The device region is disposed on the doped region and includes a source, a drain and a gate. The first isolation structure is disposed in the semiconductor layer and surrounds the doped region. The second isolation structure surrounds the first isolation structure and is spaced apart from the first isolation structure. The terminal is disposed between the first isolation structure and the second isolation structure, and is equipotential with the source.

Abstract: A semiconductor structure is provided, which includes a first substrate, an oxide layer formed on the first substrate, a second substrate formed on the oxide layer, a plurality of semiconductor devices formed in the second substrate, a plurality of first trenches, a contact window, and a third trench. The first trenches are formed in the second substrate and filled with dielectric material and conductive material. The first trenches are separated from each other. One of the first trenches surrounds one of the semiconductor devices. The contact window is formed in the second substrate through the oxide layer and is connected to the first substrate. The contact window is filled with the dielectric material and the conductive material. The third trench is formed in the second substrate and is filled with the dielectric material and the conductive material. The third trench surrounds the contact window.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate, an oxide layer formed on the first substrate, a second substrate formed on the oxide layer, a plurality of semiconductor devices formed in the second substrate, and a plurality of trenches formed in the second substrate and filled with an insulation material, wherein the trenches are separated from each other and one of the trenches surrounds one of the semiconductor devices. A method for fabricating a semiconductor structure is also provided.