Abstract: A clock switching method for a memory storage apparatus is provided. The method includes: setting a value of the clock as a first operation frequency when an operation mode is switched to an initial state; determining whether a first continuous accessing time of accessing continuously a rewritable non-volatile memory module is larger than a first setting value during a period in which the operation mode is at the initial state; re-setting the value of the clock as a second operation frequency, which is smaller than the first operation frequency, to switch the operation mode to a power saving state if the first continuously access time is larger than the first setting value; and re-setting the value of the clock as the first operation frequency to switch the operation mode to a general state during a period in which the operation mode is at the power saving state.

Abstract: A multi-layer printed circuit board structure, a connector module and a memory storage device are provided. The multi-layer printed circuit board structure includes a first layout layer and a second layout layer. The first layout layer includes a shielding element and at least one pad. The shielding element provides the grounding voltage. The second layout layer is disposed corresponding to the first layout layer and includes at least one wire, and one end of each wire is coupled to one of the pads. A predefined proportion of the wire is covered by a projection plane of the shielding element projected on the second layout layer.

Abstract: A multi-layer printed circuit board structure, a connector module and a memory storage device are provided. The multi-layer printed circuit board structure includes a first layout layer and a second layout layer. The first layout layer includes a shielding element and at least one pad. The shielding element provides the grounding voltage. The second layout layer is disposed corresponding to the first layout layer and includes at least one wire, and one end of each wire is coupled to one of the pads. A predefined proportion of the wire is covered by a projection plane of the shielding element projected on the second layout layer.

Abstract: A clock switching method for a memory storage apparatus is provided. The method includes: setting a value of the clock as a first operation frequency when an operation mode is switched to an initial state; determining whether a first continuous accessing time of accessing continuously a rewritable non-volatile memory module is larger than a first setting value during a period in which the operation mode is at the initial state; re-setting the value of the clock as a second operation frequency, which is smaller than the first operation frequency, to switch the operation mode to a power saving state if the first continuously access time is larger than the first setting value; and re-setting the value of the clock as the first operation frequency to switch the operation mode to a general state during a period in which the operation mode is at the power saving state.