Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. The electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.

Abstract: Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.

Abstract: Whisker-reinforced ceramic matrix composites comprising a principal crystal phase selected from the group of anorthite, barium-stuffed cordierite, and mixed cordierite/anorthite are prepared by extrusion of extrudable ceramic batches comprising an extrusion vehicle and a solids component consisting essentially of inorganic whiskers and powdered glass, the glass being a thermally crystallizable glass containing an internal nucleant and capable of being consolidated at ambient pressures or above to a dense consolidated preform which may be converted to a substantially glass-free whisker-reinforced ceramic matrix composite by thermal treatment.

Abstract: Whisker-reinforced ceramic matrix composites comprising a principal crystal phase selected from the group of anorthite, barium-stuffed cordierite, and mixed cordierite/anorthite are prepared by extrusion of extrudable ceramic batches comprising an extrusion vehicle and a solids component consisting essentially of inorganic whiskers and powdered glass, the glass being a thermally crystallizable glass containing an internal nucleant and capable of being consolidated at ambient pressures or above to a dense consolidated preform which may be converted to a substantially glass-free whisker-reinforced ceramic matrix composite by thermal treatment.

Abstract: A method of increasing the coercivity of a magnetic device having a magnetite film reduced from alpha ferric oxide. The alpha ferric oxide film is reduced to magnetite by subjecting it to a temperature greater than 400.degree. C in a reducing atmosphere. The temperature of the film is then changed to between about 150.degree. and 300.degree. C, and the reducing atmosphere is replaced by an oxidizing atmosphere. The film is subjected to the oxidizing atmosphere while the temperature is held between 150.degree. and 300.degree. C, thus causing the magnetite film to become partially oxidized to form a solid solution of magnetite and gamma ferric oxide as represented by the formula, (1-x)Fe.sub.3 O.sub.4 .sup.. xFe.sub.2 O.sub.3, where x is between 0.49 and 0.85.

Abstract: A method of improving the magnetic properties of cobalt substituted magnetite by magnetizing the material to the saturation level in the desired direction, and then removing the magnetizing field. The material will retain a level of magnetization normally referred to as the remanent state of magnetization or simply remanence. The magnetized material is then subjected to a heat treatment to anneal the material. The above process significantly improves coercivity, hysteresis loop squareness ratio, and resistance to remanence loss due to external forces.