Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: An audio processing system and an audio processing method thereof are provided. A first audio signal and at least one second audio signal from different directions are received by audio receivers. A first component signal and a second component signal are calculated by separating the first audio signal. A third component signal and a fourth component signal are calculated by separating the second audio signal. A major voice information is obtained by calculating the first component signal and the third component signal. A non-major voice information is obtained by calculating the second component signal and the fourth component signal. The non-major voice information is subtracted from the first audio signal to obtain a calculation result. The calculation result and the major voice information are added to obtain a major voice signal in the first audio signal and the at least one second audio signal.

Abstract: A method of predicting photoresist patterns defined by a plurality of photomask patterns is described. The measurement data of photoresist patterns defined by patterns on a photomask that are arranged similar to the photomask patterns are provided. A physical optical kernel and a mathematical load kernel as a part of a Gaussian distribution function or other distribution function or as a combined function including a part of a Gaussian distribution function or other distribution function are provided. The optimal values of the parameters of the mathematical load kernel are determined by fitting the experiment data with a simulation based on the graphic data of the patterns on the photomask and the kernels. Photoresist patterns defined by the photomask patterns are simulated based on the graphic data of the photomask patterns, the physical optical kernel, and the mathematical load kernel with the optimal values of the parameters determined.

Abstract: A method of predicting photoresist patterns defined by a plurality of photomask patterns is described. The measurement data of photoresist patterns defined by patterns on a photomask that are arranged similar to the photomask patterns are provided. A physical optical kernel and a mathematical load kernel as a part of a Gaussian distribution function or other distribution function or as a combined function including a part of a Gaussian distribution function or other distribution function are provided. The optimal values of the parameters of the mathematical load kernel are determined by fitting the experiment data with a simulation based on the graphic data of the patterns on the photomask and the kernels. Photoresist patterns defined by the photomask patterns are simulated based on the graphic data of the photomask patterns, the physical optical kernel, and the mathematical load kernel with the optimal values of the parameters determined.