Patents by Inventor Shih-Min Chang

Shih-Min Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250096004
    Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.
    Type: Application
    Filed: December 4, 2024
    Publication date: March 20, 2025
    Inventors: HSIN-YUAN LEE, CHIH-MIN HSIAO, CHIEN-WEN LAI, SHIH-MING CHANG
  • Publication number: 20250063744
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a substrate comprising first opposing sidewalls defining a first trench and second opposing sidewalls defining a second trench laterally offset from the first trench. A stack of layers comprises a plurality of conductive layers and a plurality of dielectric layers alternatingly stacked with the conductive layers. The stack of layers comprises a first segment in the first trench and a second segment in the second trench. A first lateral distance between the first segment and the second segment aligned with a first surface of the substrate is greater than a second lateral distance between the first segment and the second segment below the first surface of the substrate.
    Type: Application
    Filed: November 7, 2024
    Publication date: February 20, 2025
    Inventors: Hsin-Li Cheng, Jyun-Ying Lin, Alexander Kalnitsky, Shih-Fen Huang, Shu-Hui Su, Ting-Chen Hsu, Tuo-Hsin Chien, Felix Ying-Kit Tsui, Shi-Min Wu, Yu-Chi Chang
  • Publication number: 20250017138
    Abstract: A weeder robot includes a movable carrier and a blade module assembled to the movable carrier. The movable carrier includes a map creating module and a control module that is electrically coupled to the blade module and the map creating module. The map creating module includes an infrared unit and a vision sensing unit. The infrared unit can emit and receive an infrared light. The vision sensing unit can obtain an image information in a non-contact manner. The movable carrier can be used to move in a court, so that the map creating module can generate a three-dimensional (3D) court map through cooperation between the infrared unit and the vision sensing unit. When the weeder robot performs a maintenance process, the control module drives the blade module to weed a portion of a lawn higher than a predetermined height according to the 3D court map.
    Type: Application
    Filed: July 10, 2023
    Publication date: January 16, 2025
    Inventors: YEN-MIN CHANG, SHIH-FENG CHEN, HAN-LIN CHIANG
  • Patent number: 10676668
    Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: June 9, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Neng-Jye Yang, Kuo Bin Huang, Ming-Hsi Yeh, Shun Wu Lin, Yu-Wen Wang, Jian-Jou Lian, Shih Min Chang
  • Publication number: 20190119570
    Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.
    Type: Application
    Filed: December 14, 2018
    Publication date: April 25, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Neng-Jye YANG, Kuo Bin HUANG, Ming-Hsi YEH, Shun Wu LIN, Yu-Wen WANG, Jian-Jou LIAN, Shih Min CHANG
  • Patent number: 10179878
    Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: January 15, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Neng-Jye Yang, Kuo Bin Huang, Ming-Hsi Yeh, Shun Wu Lin, Yu-Wen Wang, Jian-Jou Lian, Shih Min Chang
  • Publication number: 20180171226
    Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.
    Type: Application
    Filed: July 24, 2017
    Publication date: June 21, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Neng-Jye YANG, Kuo Bin HUANG, Ming-Hsi YEH, Shun Wu LIN, Yu-Wen WANG, Jian-Jou LIAN, Shih Min CHANG
  • Publication number: 20150314322
    Abstract: A method of applying a protective coating to a substrate includes applying a surface treatment to edges of the substrate to increase surface wettability of the edges and/or preheating the substrate. A curable coating material is applied to the edges. Then, the substrate is spun to adjust a thickness and uniformity of the curable coating material applied on the substrate edges. The curable coating material is cured to form the protective coating on the substrate edges.
    Type: Application
    Filed: April 24, 2015
    Publication date: November 5, 2015
    Inventors: Shih-Min Chang, Cheng-Ta Chen, Chao-Yin Chuang, Hsien Li Lu
  • Publication number: 20150060401
    Abstract: A method of edge coating a batch of glass articles includes printing masks on surfaces of a glass sheet, where at least one of the masks is a patterned mask defining a network of separation paths. The glass sheet with the printed masks is divided into multiple glass articles along the separation paths. For at least a batch of the glass articles, the edges of the glass articles in the batch are finished to reduce roughness at the edges. Each finished edge is then etched with an etching medium to reduce and/or blunt flaws in the finished edge. A curable coating is simultaneously applied to the etched edges. The curable coatings are pre-cured. Then, the printed masks are removed from the glass articles with the curable coatings. After removing the printed masks, the pre-cured curable coatings are post-cured.
    Type: Application
    Filed: August 25, 2014
    Publication date: March 5, 2015
    Inventors: Shih-Min Chang, Cheng-Ta Chen, UeiJie Lin, Hsien Li Lu