Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. The electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. The contact stack excludes a metal nitride layer in direct contact with the silicide layer.

Abstract: Disclosed is a radio frequency signal receiving device, which includes a low-noise amplifier (LNA) and a mixer. The LNA includes a first inductor and a second inductor. The mixer has a first differential pair and a second differential pair, common ends of the first differential pair and the second differential pair are respectively coupled to the first differential output end and the second differential output end. The first inductor and the second inductor are serially connected between the first differential output end and the second differential output end of the LNA, so as to reduce power consumption and reach suitable frequency response. The first inductor and the second inductor generate a resonance effect with parasitic capacitance on the mixer, so as to effectively reduce flicker noises, and improve a working benefit of the radio frequency signal receiving device.

Abstract: Disclosed is a radio frequency signal receiving device, which includes a low-noise amplifier (LNA) and a mixer. The LNA includes a first inductor and a second inductor. The mixer has a first differential pair and a second differential pair, common ends of the first differential pair and the second differential pair are respectively coupled to the first differential output end and the second differential output end. The first inductor and the second inductor are serially connected between the first differential output end and the second differential output end of the LNA, so as to reduce power consumption and reach suitable frequency response. The first inductor and the second inductor generate a resonance effect with parasitic capacitance on the mixer, so as to effectively reduce flicker noises, and improve a working benefit of the radio frequency signal receiving device.