Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Abstract: A laser device is provided. The laser device includes a stack of epitaxial layers, a first conductive layer, an intermediate layer, and a first electrode. The stack of epitaxial layers has a central region and an edge region. The stack of epitaxial layers includes a first reflective structure, an active region disposed on the first reflective structure, a second reflective structure disposed on the active region. The first conductive layer disposes on the stack of epitaxial layers and covers the central region and at least a part of the edge region. The intermediate layer has a first opening that corresponding to the central region of the stack of epitaxial layers, wherein the intermediate layer comprises insulating material or metal. The first electrode disposes on the first conductive layer.

Abstract: A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.

Abstract: An integrated circuit (IC) device includes a substrate, and a memory array layer having a plurality of transistors. First through fourth gate contacts are arranged along a first axis, and coupled to underlying gates of the plurality of transistors. First through fifth source/drain contacts in the memory array layer extend along a second axis transverse to the first axis, and are coupled to underlying source/drains of the plurality of transistors. The gate contacts and the source/drain contacts are alternatingly arranged along the first axis. A source line extends along the first axis, and is coupled to the first and fifth source/drain contacts. First and second word lines extend along the first axis, the first word line is coupled to the first and third gate contacts, and the second word line is coupled to the second and fourth gate contacts.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A method for generating an application white list is applicable to a server. The method is performed by a computing device communicably connected to the server and includes following steps: collecting a network log and a system log of the server, performing an analysis procedure to extract a plurality of application attributes from the network log and the system log with one of the application attributes being an application identifier, performing a training procedure according to the plurality of application attributes to generate a candidate rule, according to a plurality of behaviors in the network log and the system log, calculating the ratio of the number of behaviors among said plurality of behaviors that conforming to the candidate rule to a number of all of said plurality of behaviors, and storing the candidate rule to a whitelist when the ratio falls within a trust interval.

Abstract: A cabinet structure for storing at least one shoe includes a body and a sliding frame set. The body includes a cabinet body and at least one door leaf. The door leaf can be movably assembled to a front side of the cabinet. The sliding frame set includes two fixing members, two sliding members and a frame. The two fixing members can be fixed respectively to an inner top surface and an inner bottom surface of the cabinet body. The two sliding members can be movably assembled to the fixing members respectively. A plurality of placement plates for placing the at least one shoe are arranged at the frame and pivoted between the two sliding members to facilitate a user to place shoes at two lateral sides of the frame and access shoes placed at each of the lateral sides by rotating the frame.

Abstract: A method for manufacturing a diamond-like carbon film is described, which includes the following steps. A substrate is disposed into a chamber. An aromatic cyclic hydrocarbon is introduced into the chamber. A diamond-like carbon film is grown on the substrate by using the aromatic cyclic hydrocarbon as a reaction precursor The step of growing the diamond-like carbon film includes controlling a substrate temperature at 200 Celsius degrees to 800 Celsius degrees.

Abstract: A semiconductor process includes: applying an encapsulation material on an upper surface of a first substrate to encapsulate a die and first conductive parts, wherein the encapsulation material is a B-stage adhesive; forming a plurality of openings on the encapsulation material to expose the first conductive parts; pressing a second substrate onto the encapsulation material to adhere a lower surface of the second substrate to the encapsulation material, wherein the second substrate includes second conductive parts, and each of the first conductive parts contacts a corresponding one of the second conductive parts; and heating to fuse the first conductive parts and the corresponding second conductive parts to form a plurality of interconnection elements and solidify the encapsulation material to form a C-stage adhesive.

Abstract: A semiconductor process includes: applying an encapsulation material on an upper surface of a first substrate to encapsulate a die and first conductive parts, wherein the encapsulation material is a B-stage adhesive; forming a plurality of openings on the encapsulation material to expose the first conductive parts; pressing a second substrate onto the encapsulation material to adhere a lower surface of the second substrate to the encapsulation material, wherein the second substrate includes second conductive parts, and each of the first conductive parts contacts a corresponding one of the second conductive parts; and heating to fuse the first conductive parts and the corresponding second conductive parts to form a plurality of interconnection elements and solidify the encapsulation material to form a C-stage adhesive.

Abstract: The present disclosure relates to a semiconductor package structure and semiconductor process. The semiconductor package includes a first substrate, a second substrate, a die, a plurality of interconnection elements and an encapsulation material. Each of the interconnection elements connects the first substrate and the second substrate. The encapsulation material encapsulates the interconnection elements. The encapsulation material defines a plurality of accommodation spaces to accommodate the interconnection elements, and the profile of each accommodation space is defined by the individual interconnection element, whereby the warpage behavior of the first substrate is in compliance with that of the second substrate during reflow.

Abstract: A load balancing system includes a client terminal and a server terminal. The client terminal is configured to communicate with the server terminal. The client terminal includes at least one client. The server terminal includes a control module and at least one server. The control module includes an assigning unit and a storing unit. The storing unit is configured to store a plurality of IP addresses, and each server corresponds to one unique IP address. The assigning unit is configured to assign an IP address to the requesting client after one client sends a request to the server terminal. The requesting client is configured to obtain the IP address and to connect to the corresponding server according to the obtained IP address. A load balancing method is also provided.

Abstract: A method for manufacturing a diamond-like carbon film is described, which includes the following steps. A substrate is disposed into a chamber. An aromatic cyclic hydrocarbon is introduced into the chamber. A diamond-like carbon film is grown on the substrate by using the aromatic cyclic hydrocarbon as a reaction precursor The step of growing the diamond-like carbon film includes controlling a substrate temperature at 200 Celsius degrees to 800 Celsius degrees.

Abstract: An illumination system and an illumination method thereof are provided. An environmental condition of a position of an illumination apparatus is detected, so as to produce an environmental information. A corresponding illumination result prediction model is selected according to a first environmental information. An illumination character of an illumination light is adjusted according to the illumination result prediction model and the first environmental information.

Abstract: An automatic range finding method is applied to measure a distance between a stereo camera and a reference plane. The automatic range finding method includes acquiring a disparity-map video by the stereo camera facing the reference plane, analyzing the disparity-map video to generate a depth histogram, selecting a pixel group having an amount greater than a threshold from the depth histogram, calculating the distance between the stereo camera and the reference plane by weight transformation of the pixel group, and applying a coarse-to-fine computation for the disparity-map video.

Abstract: A semiconductor package structure includes a first semiconductor substrate, a second semiconductor substrate, a semiconductor die electrically connected to the first semiconductor substrate, an interconnection element and an encapsulant. The first semiconductor substrate includes a first top pad, and the second semiconductor substrate includes a second bottom pad. The interconnection element connects the second bottom pad and the first top pad. The interconnection element includes a first cupped portion and a second arcuate portion, where the first portion is connected to the first top pad and the second portion is connected to the second bottom pad. The first portion and the second portion together define the interconnection element as a monolithic component. The encapsulant is disposed between the first semiconductor substrate and the second semiconductor substrate, and covers the semiconductor die and the interconnection element.

Abstract: An automatic range finding method is applied to measure a distance between a stereo camera and a reference plane. The automatic range finding method includes acquiring a disparity-map video by the stereo camera facing the reference plane, analyzing the disparity-map video to generate a depth histogram, selecting a pixel group having an amount greater than a threshold from the depth histogram, calculating the distance between the stereo camera and the reference plane by weight transformation of the pixel group, and applying a coarse-to-fine computation for the disparity-map video.

Abstract: 2-aryl-4-quinolones are converted into phosphates by reacting with tetrabenzyl pyrophosphate to form dibenzyl phosphates thereof, which are then subject to hydrogenation to replace dibenzyl groups with H, followed by reacting with Amberlite IR-120(Na+ form) to form disodium salts. The results of preliminary screening revealed that these phosphates showed significant anti-cancer activity. A novel intermediate, 2-selenophene 4-quinolone and N,N-dialkylaminoalkyl derivatives of 2-phenyl-4-quinolones are also synthesized. These novel intermediates exhibited significant anticancer activities.

Abstract: 2-aryl-4-quinolones are converted into phosphates by reacting with tetrabenzyl pyrophosphate to form dibenzyl phosphates thereof, which are then subject to hydrogenation to replace dibenzyl groups with H, followed by reacting with Amberlite IR-120(Na+ form) to form disodium salts. The results of preliminary screening revealed that these phosphates showed significant anti-cancer activity. A novel intermediate, 2-selenophene 4-quinolone and N,N-dialkylaminoalkyl derivatives of 2-phenyl-4-quinolones are also synthesized. These novel intermediates exhibited significant anticancer activities.

Abstract: 2-aryl-4-quinolones are converted into phosphates by reacting with tetrabenzyl pyrophosphate to form dibenzyl phosphates thereof, which are then subject to hydrogenation to replace dibenzyl groups with H, followed by reacting with Amberlite IR-120 (Na+ form) to form disodium salts. The results of preliminary screening revealed that these phosphates showed significant anti-cancer activity. A novel intermediate, 2-selenophene 4-quinolone and N,N-dialkylaminoalkyl derivatives of 2-phenyl-4-quinolones are also synthesized. These novel intermediates exhibited significant anticancer activities.