Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: A non-vacuum semiconductor pick-up and transfer apparatus for handling semiconductor wafers. A flat tapered blade, with front and rear arcuate abutment surfaces adapted to hold a wafer, is provided. In use the blade is thrust between spaced wafers supported in a holder, lifted to retain the wafer between the abutment surfaces, and removed from the holder. The thin and tapered blade shape minimizes damage to the associated wafers in the event of a misalignment of the blade with the wafers.