Patents by Inventor Shih-Nan Yen

Shih-Nan Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210135052
    Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.
    Type: Application
    Filed: November 4, 2020
    Publication date: May 6, 2021
    Inventors: Yen-Chun Tseng, Kuo-Feng Huang, Shih-Chang Lee, Ming-Ta Chin, Shih-Nan Yen, Cheng-Hsing Chiang, Chia-Hung Lin, Cheng-Long Yeh, Yi-Ching Lee, Jui-Che Sung, Shih-Hao Cheng
  • Patent number: 7615773
    Abstract: A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.
    Type: Grant
    Filed: December 29, 2006
    Date of Patent: November 10, 2009
    Assignee: Epistar Corporation
    Inventors: Shih-Nan Yen, Jung-Tu Chiu, Yu-Jiun Shen, Ching-Fu Tsai
  • Publication number: 20070152207
    Abstract: A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.
    Type: Application
    Filed: December 29, 2006
    Publication date: July 5, 2007
    Applicant: EPISTAR CORPORATION
    Inventors: Shih-Nan Yen, Jung-Tu Chiu, Yu-Jiun Shen, Ching-Fu Tsai