Abstract: An image capturing device is provided. The image capturing device includes a main body, an image capturing module and a rod. The image capturing module includes a lens and an image capturing unit. The main body includes a display module. The image capturing module is electrically connected to the main body. The rod is adjustably disposed between the image capturing module and the main body.

Abstract: An image capturing device is provided. The image capturing device includes a main body, an image capturing module and a rod. The image capturing module includes a lens and an image capturing unit. The main body includes a display module. The image capturing module is electrically connected to the main body. The rod is adjustably disposed between the image capturing module and the main body.

Abstract: A housing having a coating is disclosed. The housing comprises a base substrate made of metallic material; a micro-arc oxide layer formed on the base substrate; and a protection outer film formed on the micro-arc oxide layer and comprising a coating layer and a metallic layer, wherein the metallic layer is formed on the micro-arc oxide layer and covers a portion of the micro-arc oxide layer; and the coating layer is formed on a remaining portion of the micro-arc oxide layer so that the micro-arc oxide layer is covered by the metallic layer and the coating layer.

Abstract: A housing having a coating is disclosed. The housing comprises a base substrate made of metallic material; a micro-arc oxide layer formed on the base substrate; and a protection outer film formed on the micro-arc oxide layer and comprising a coating layer and a metallic layer, wherein the metallic layer is formed on the micro-arc oxide layer and covers a portion of the micro-arc oxide layer; and the coating layer is formed on a remaining portion of the micro-arc oxide layer so that the micro-arc oxide layer is covered by the metallic layer and the coating layer.

Abstract: A housing having a coating is disclosed. The housing comprises a base substrate made of metallic material; a micro-arc oxide layer formed on the base substrate; and a protection outer film formed on the micro-arc oxide layer and comprising a coating layer and a metallic layer, wherein the metallic layer is formed on the micro-arc oxide layer and covers a portion of the micro-arc oxide layer; and the coating layer is formed on a remaining portion of the micro-arc oxide layer so that the micro-arc oxide layer is covered by the metallic layer and the coating layer.

Abstract: The invention provides a top emitting organic electroluminescent display comprising a substrate including a display area. A conductive layer is disposed on the substrate, electrically connecting the substrate. A reflective layer is disposed on the display region of the substrate. A dielectric layer is formed on the conductive layer, the reflective layer and the substrate, with a via exposing the conductive layer. A transparent electrode layer is disposed on the dielectric layer, electrically connecting the conductive layer through the via. An organic electroluminescent layer corresponding to the display region is disposed on the transparent electrode layer.

Abstract: The invention provides a top emitting organic electroluminescent display comprising a substrate including a display area. A conductive layer is disposed on the substrate, electrically connecting the substrate. A reflective layer is disposed on the display region of the substrate. A dielectric layer is formed on the conductive layer, the reflective layer and the substrate, with a via exposing the conductive layer. A transparent electrode layer is disposed on the dielectric layer, electrically connecting the conductive layer through the via. An organic electroluminescent layer corresponding to the display region is disposed on the transparent electrode layer.

Abstract: The invention discloses an LTPS LCD comprising a plurality of NMOS elements and PMOS elements on a substrate. Each element comprises a SiNx layer underlying or capping a gate electrode. The SiNx layer features an appropriate length extending from the bottom edge of the gate electrode. The SiNx layer can be replaced with a SiOxNy layer.

Abstract: In a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistor, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors.

Abstract: A method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistors, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors.