Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.

Abstract: A semiconductor device includes a substrate, a stack of semiconductor nanosheets, a dielectric wall, and a gate structure. The substrate includes a nanosheet mesa, and the stack of semiconductor nanosheets is disposed on the nanosheet mesa. The dielectric wall crosses through the nanosheet mesa and the stack of semiconductor nanosheets. The gate structure wraps the stack of semiconductor nanosheets and crosses over the dielectric wall, wherein a top of the dielectric wall has a recess.

Abstract: The present disclosure relates to a semiconductor device package and a method for manufacturing the semiconductor device package. The semiconductor device package includes a substrate, a grounding element, a component, a package body and a conductive layer. The grounding element is disposed in the substrate and includes a connection surface exposed at a second portion of a lateral surface of the substrate. The component is disposed on a top surface of the substrate. The package body covers the component and the top surface of the substrate. A lateral surface of the package body is aligned with the lateral surface of the substrate. The conductive layer covers a top surface and the lateral surface of the package body, and further covers the second portion of the lateral surface of the substrate. A first portion of the lateral surface of the substrate is exposed from the conductive layer.

Abstract: The present disclosure relates to a semiconductor device package and a method for manufacturing the semiconductor device package. The semiconductor device package includes a substrate, a grounding element, a component, a package body and a conductive layer. The grounding element is disposed in the substrate and includes a connection surface exposed at a second portion of a lateral surface of the substrate. The component is disposed on a top surface of the substrate. The package body covers the component and the top surface of the substrate. A lateral surface of the package body is aligned with the lateral surface of the substrate. The conductive layer covers a top surface and the lateral surface of the package body, and further covers the second portion of the lateral surface of the substrate. A first portion of the lateral surface of the substrate is exposed from the conductive layer.