Abstract: A pressure sensor can include a diaphragm plate of an electrically conductive material, the diaphragm plate including substantially planar opposed first and second surfaces. A layer of a dielectric material can be provided at the first surface of the diaphragm plate along a periphery thereof such that a flexion region of the first surface is substantially free of the dielectric material. The dielectric layer can be configured to engage a fixed structure within a housing to support the flexion region as to enable deflection thereof relative to the fixed structure that changes an electrical characteristic of the pressure sensor in response to application of force at the second surface of the diaphragm plate.

Abstract: A pressure sensor can include a diaphragm plate of an electrically conductive material, the diaphragm plate including substantially planar opposed first and second surfaces. A layer of a dielectric material can be provided at the first surface of the diaphragm plate along a periphery thereof such that a flexion region of the first surface is substantially free of the dielectric material. The dielectric layer can be configured to engage a fixed structure within a housing to support the flexion region as to enable deflection thereof relative to the fixed structure that changes an electrical characteristic of the pressure sensor in response to application of force at the second surface of the diaphragm plate.

Abstract: A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.

Abstract: A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.