Abstract: A method for manufacturing a nanostructure composite material includes a step of preparing an inorganic material nanostructure, and a step of embedding an organic material to the inorganic material nanostructure so as to form the nanostructure composite material. In addition, a nanostructure composite material is also provided.

Abstract: A method for manufacturing a Zinc oxide nanocapsule includes: a step of preparing a Zinc oxide narorod; a step of etching the Zinc oxide narorod to form a Zinc oxide nanotube, wherein the Zinc oxide nanotube is a hollow tubular structure; a step of filling a material into the Zinc oxide nanotube; and, a step of regrowing the Zinc oxide nanotube to encapsulate the hollow tubular structure so as to form a Zinc oxide nanocapsule. In addition, a zinc oxide nanocapsule is also provided.

Abstract: A method for manufacturing a nanostructure composite material includes a step of preparing an inorganic material nanostructure, and a step of embedding an organic material to the inorganic material nanostructure so as to form the nanostructure composite material. In addition, a nanostructure composite material is also provided.

Abstract: A method for manufacturing a Zinc oxide nanocapsule includes: a step of preparing a Zinc oxide narorod; a step of etching the Zinc oxide narorod to form a Zinc oxide nanotube, wherein the Zinc oxide nanotube is a hollow tubular structure; a step of filling a material into the Zinc oxide nanotube; and, a step of regrowing the Zinc oxide nanotube to encapsulate the hollow tubular structure so as to form a Zinc oxide nanocapsule. In addition, a zinc oxide nanocapsule is also provided.

Abstract: The invention is related to a method for forming dendritic silver with periodic structure as light-trapping layer, includes these steps: form a photoresist layer on a conductive substrate, and at least two coherent light beams is provided in using a laser interference lithography apparatus, to form a plurality of particular patterns respectively on the setting-exposure positions of the conductive substrate in sequence till the particular periods pattern formed. Thereafter, form the dendritic silver nanostructure with period pattern on the conductive substrate via electrochemical process, wherein operating voltage is 2V or higher, and electrochemical reaction time is 10 sec or higher.

Abstract: The invention is related to a method for forming dendritic silver with periodic structure as light-trapping layer, includes these steps: form a photoresist layer on a conductive substrate, and at least two coherent light beams is provided in using a laser interference lithography apparatus, to form a plurality of particular patterns respectively on the setting-exposure positions of the conductive substrate in sequence till the particular periods pattern formed. Thereafter, form the dendritic silver nanostructure with period pattern on the conductive substrate via electrochemical process, wherein operating voltage is 2V or higher, and electrochemical reaction time is 10 sec or higher.

Abstract: The present invention relates to a method for fabricating a thin film formed with a uniform single-size monolayer of spherical AZO nanoparticles. Because of its own advantages in cost and transparency, Al-doped ZnO (AZO) transparent conductive film is becoming the most commonly used transparent conducting oxide (TCO) replacement for solar cells. In this invention, a colloidal chemical means is adopted for enabling a chemical reaction between metal salts, water, and polyhydric alcohols at a room-temperature environment, and thereby, a process for fabricating spherical AZO nanoparticles in a diameter ranged between 100 nm to 400 nm according to different parameter configurations can be achieved while controlling the actual Al/Zn ratio to be ranged between 0.1% to 3%. In addition, a dip coating means is adopted for densely distributing the spherical AZO nanoparticles on a substrate into a monolayer close-packed structure.

Abstract: The present invention provides a solar cell, which has an improved light-trapping structure, wherein the light trapping structure is a single layer of thin film made of a plurality of zinc oxide microballs whose diameter is ranged between 300 nm and 650 nm. In a preferred embodiment, the light trapping layer, being configured with a plurality of microballs made of zinc oxide, is disposed at a position between the front surface of a photovoltaic conversion layer and a front electrode of the solar cell. Since the light-trapping structure is formed directly from the ZnO transparent conductive layer of the solar cell, the types of materials used for constructing the solar cell are reduced.

Abstract: A thin film solar cell has a rough surface layer formed by nano/micro particle conductor balls, which is provided by a method of producing a textured surface for a conductive layer of the solar cell by mounting the nano/micro particle conductor balls with a particle diameter of 50 nm to 150 nm onto the conductive layer by spray coating, spin coating, dip coating, natural deposition or gain, and a monolayer or multilayer self-assembled or random textured structure is achieved and applied in a thin film solar cell, so as to effectively reduce the thickness of an intrinsic semiconductor and greatly lower the manufacturing cost of the solar cell.

Abstract: The invention is directed to a wafer bonding method for bonding a first wafer with a second wafer, wherein the first wafer has a first top surface and the second wafer has a second top surface formed thereon and the first wafer bonds with the second wafer in a manner that the first top surface of the first wafer is opposite the second top surface of the second wafer. The wafer bonding method comprises steps of adding a hydroxyl-ion-containing solution between the first top surface and the second top surface and then applying an external pressure on the first wafer and the second wafer. An annealing process is performed.

Abstract: A semiconductor hollow optical waveguide (SHOW-ODR) device. The semiconductor hollow optical waveguide device comprises a bottom substrate having a trench within, a first omni-directional reflector conformal located on the bottom substrate, and a top substrate having a second omni-directional reflector and located on the bottom substrate with the second omni-directional reflector in contact with the first omni-directional reflector. In addition, a portion of the first omni-directional reflector in the trench and a portion of the second omni-directional reflector over the trench together form an air channel.

Abstract: A semiconductor hollow optical waveguide (SHOW-ODR) device. The semiconductor hollow optical waveguide device comprises a bottom substrate having a trench within, a first omni-directional reflector conformal located on the bottom substrate, and a top substrate having a second omni-directional reflector and located on the bottom substrate with the second omni-directional reflector in contact with the first omni-directional reflector. In addition, a portion of the first omni-directional reflector in the trench and a portion of the second omni-directional reflector over the trench together form an air channel.