Patents by Inventor Shih-Shu Tsai

Shih-Shu Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor array and method of fabricating the same
    Patent number: 8921977
    Abstract: A capacitor array includes a plurality of capacitors and a support frame. Each capacitor includes an electrode. The support frame supports the plurality of electrodes and includes a plurality of support structures corresponding to the plurality of electrodes. Each support structure may surround the respective electrode. The support frame may include oxide of a doped oxidizable material.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: December 30, 2014
    Assignee: Nan Ya Technology Corporation
    Inventors: Jen Jui Huang, Che Chi Lee, Shih Shu Tsai, Cheng Shun Chen, Shao Ta Hsu, Chao Wen Lay, Chun I Hsieh, Ching Kai Lin
  • CAPACITOR ARRAY AND METHOD OF FABRICATING THE SAME
    Publication number: 20130161786
    Abstract: A capacitor array includes a plurality of capacitors and a support frame. Each capacitor includes an electrode. The support frame supports the plurality of electrodes and includes a plurality of support structures corresponding to the plurality of electrodes. Each support structure may surround the respective electrode. The support frame may include oxide of a doped oxidizable material.
    Type: Application
    Filed: December 21, 2011
    Publication date: June 27, 2013
    Applicant: Nan Ya Technology Corporation
    Inventors: Jen Jui Huang, Che Chi Lee, Shih Shu Tsai, Cheng Shun Chen, Shao Ta Hsu, Chao Wen Lay, Chun I. Hsieh, Ching Kai Lin
  • Non-volatile memory cell and fabrication method thereof
    Patent number: 8089060
    Abstract: A non-volatile memory cell and a fabrication method thereof are provided. The non-volatile memory cell includes an anode; a cathode having a surface facing the anode; a specific structure disposed on the surface; and an ion conductor disposed among the anode, the cathode and the specific structure, wherein the specific structure is one of a bulging area on the surface of the cathode and an insulating layer with an opening.
    Type: Grant
    Filed: July 22, 2009
    Date of Patent: January 3, 2012
    Assignee: Nanya Technology Corp.
    Inventors: Chun-I Hsieh, Shih-Shu Tsai, Chang-Rong Wu
  • NON-VOLATILE MEMORY CELL AND FABRICATION METHOD THEREOF
    Publication number: 20100193762
    Abstract: A non-volatile memory cell and a fabrication method thereof are provided. The non-volatile memory cell includes an anode; a cathode having a surface facing the anode; a specific structure disposed on the surface; and an ion conductor disposed among the anode, the cathode and the specific structure, wherein the specific structure is one of a bulging area on the surface of the cathode and an insulating layer with an opening.
    Type: Application
    Filed: July 22, 2009
    Publication date: August 5, 2010
    Applicant: NANYA TECHNOLOGY CORP.
    Inventors: Chun-I Hsieh, Shih-Shu Tsai, Chang-Rong Wu
  • METHOD OF FABRICATING RRAM
    Publication number: 20100021626
    Abstract: A method of fabricating a RRAM includes: forming a bottom electrode; forming a first metal layer, a first metal oxide layer, and a second metal layer on the bottom electrode in sequence; performing an RTO process followed by a top electrode formation; oxidizing the first metal layer to a second metal oxide layer comprising a second oxygen content; and oxidizing the second metal layer to a third metal oxide layer comprising a third oxygen content; wherein the first metal oxide layer has a first oxygen content after the RTO process is performed, the third oxygen content being higher than the first oxygen content and the first oxygen content being higher than the second oxygen content.
    Type: Application
    Filed: October 1, 2008
    Publication date: January 28, 2010
    Inventors: Chun-I Hsieh, Chang-Rong Wu, Shih-Shu Tsai, Tsai-Yu Huang