Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: A device comprises a gate structure, n-type source/drain features, p-type source/drain features, an NFET channel, and a PFET channel. The gate structure is over a substrate. The n-type source/drain features are on opposite first and second sides of the gate structure, respectively. The p-type source/drain features are on opposite third and fourth sides of the gate structure, respectively. The NFET channel extends within the gate structure and connects the n-type source/drain features. The PFET channel extends within the gate structure and connects the p-type source/drain features. The NFET channel and the PFET channel are vertically spaced apart by the gate structure.

Abstract: A vertical cable barrier includes a top rail defining a plurality of top through holes spaced apart along a top web portion. A bottom rail includes a bottom web portion and a pair of bottom leg portions, where the bottom web portion and the pair of bottom leg portions form a channel, and the bottom web portion defines a plurality of bottom through holes spaced apart along the bottom web portion and aligned with the top through holes. A vertical cable is disposed on each side of a rigid support member. Each vertical cable includes a top end directly attached to a hollow tubular shank of a first top swage fitting and a bottom end of received in and directly attached to a hollow tubular shank of a first bottom swage fitting, where the top end of the vertical cable extends through one of the plurality of top through holes, and the bottom end of the vertical cable extends through one of the bottom through holes that is disposed in vertical alignment with the one top through hole.

Abstract: A method for manufacturing an armrest includes making a plurality of core sections. Each core section is formed by bonding a plurality of waste pieces of high-quality wood together. Each of two adjacent ends respectively of two adjacent core sections is machined to provide a serrated coupling face having a plurality of grooves and a plurality of protrusions. The core sections are bonded together to form a core having a desired length by applying adhesive to the serrated coupling faces. A plurality of upper boards made of the same material as the core is bonded to a top side of the core. A plurality of lateral boards made of the same material as the core is bonded to each of two lateral sides of the core.

Abstract: A method for manufacturing an armrest includes making a plurality of core sections. Each core section is formed by bonding a plurality of waste pieces of high-quality wood together. Each of two adjacent ends respectively of two adjacent core sections is machined to provide a serrated coupling face having a plurality of grooves and a plurality of protrusions. The core sections are bonded together to form a core having a desired length by applying adhesive to the serrated coupling faces. A plurality of upper boards made of the same material as the core is bonded to a top side of the core. A plurality of lateral boards made of the same material as the core is bonded to each of two lateral sides of the core.