Patents by Inventor SHIH TE PAI

SHIH TE PAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150318439
    Abstract: An optoelectronic device includes a substrate; a first semiconductor layer having a first conductivity-type impurity formed on the substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer having a second conductivity-type impurity formed on the active layer; and a hollow component formed inside the active layer or the second semiconductor layer, wherein a material of the active layer or a material of the second semiconductor layer comprises group IIIA nitride semiconductor.
    Type: Application
    Filed: June 29, 2015
    Publication date: November 5, 2015
    Inventors: Wei Chih PENG, Shih Te PAI
  • Optoelectronic device and method for manufacturing the same
    Patent number: 9070827
    Abstract: An optoelectronic device comprising: a substrate; and an epitaxial stack including a first semiconductor layer having a first conductivity-type impurity, an active layer, and a second semiconductor layer having a second conductivity-type impurity formed in sequence on the substrate; a hollow component formed inside the active layer or the second semiconductor layer, wherein the layer with the hollow component is doped with an additional impurity.
    Type: Grant
    Filed: August 14, 2013
    Date of Patent: June 30, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Wei Chih Peng, Shih Te Pai
  • OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20130328102
    Abstract: An optoelectronic device comprising: a substrate; and an epitaxial stack including a first semiconductor layer having a first conductivity-type impurity, an active layer, and a second semiconductor layer having a second conductivity-type impurity formed in sequence on the substrate; a hollow component formed inside the active layer or the second semiconductor layer, wherein the layer with the hollow component is doped with an additional impurity.
    Type: Application
    Filed: August 14, 2013
    Publication date: December 12, 2013
    Applicant: EPISTAR CORPORATION
    Inventors: WEI CHIH PENG, SHIH TE PAI