Abstract: A command processing method and a storage controller are provided. The command processing method includes: receiving multiple read-modify-write (RMW) commands by a command processing pool of the storage controller, wherein each of the RMW commands includes a read command and a write command in pairs; locking a queue by the command processing pool and transmitting a pending first read command of the RMW commands in the command processing pool to the queue; when a second read command paired with a second write command of the RMW commands is pending, not locking the queue by the command processing pool and not transmitting the second write command to the queue; and when a third read command paired with a third write command of the RMW commands is not pending, locking the queue by the command processing pool and transmitting the third write command to the queue.

Abstract: A command processing method and a storage controller are provided. The command processing method includes: receiving multiple read-modify-write (RMW) commands by a command processing pool of the storage controller, wherein each of the RMW commands includes a read command and a write command in pairs; locking a queue by the command processing pool and transmitting a pending first read command of the RMW commands in the command processing pool to the queue; when a second read command paired with a second write command of the RMW commands is pending, not locking the queue by the command processing pool and not transmitting the second write command to the queue; and when a third read command paired with a third write command of the RMW commands is not pending, locking the queue by the command processing pool and transmitting the third write command to the queue.

Abstract: A memory management method and a storage controller using the same are provided. The memory management method includes: establishing an array; selecting a first block from spare blocks at an initial time point and storing a first index number of the first block to a look-ahead block; adding the first index number in the look-ahead block to the array at a first time point, selecting a second block from the spare blocks and replacing the first index number stored to the look-ahead block with a second index number of the second block, and programming the first block; and adding the second index number in the look-ahead block to the array at a second time point, selecting a third block from the spare blocks and replacing the second index number in the look-ahead block with a third index number of the third block, and programming the second block.

Abstract: A logical-to-physical table updating method and a storage controller are provided. The storage controller includes a processor and a flash memory access circuit. The flash access circuit is coupled to a flash memory. The logical-to-physical table updating method includes: transmitting a write command to the flash memory access circuit by the processor; executing the write command to access the flash memory by the flash memory access circuit; and after the write command is executed by the flash memory access circuit, updating a logical-to-physical table in a random access memory by the flash memory access circuit.

Abstract: A memory management method and a storage controller using the same are provided. The memory management method includes: establishing an array; selecting a first block from spare blocks at an initial time point and storing a first index number of the first block to a look-ahead block; adding the first index number in the look-ahead block to the array at a first time point, selecting a second block from the spare blocks and replacing the first index number stored to the look-ahead block with a second index number of the second block, and programming the first block; and adding the second index number in the look-ahead block to the array at a second time point, selecting a third block from the spare blocks and replacing the second index number in the look-ahead block with a third index number of the third block, and programming the second block.

Abstract: A data backup method is provided. The data backup method includes maintaining a logical-to-physical table (L2P table) in a memory, where the L2P table records a plurality of physical addresses respectively corresponding to a plurality of first logical addresses and a plurality of trim marks; receiving a trim command, wherein the trim command indicates that data stored in one or more second logical addresses is invalid; according to the trim command, not clearing physical addresses respectively corresponding to the second logical addresses in the L2P table, and changing trim marks respectively corresponding to the second logical addresses from a first bit value to a second bit value; and when a predetermined condition is met, updating the L2P table according to the trim marks, and storing the updated L2P table into a rewritable non-volatile memory module.

Abstract: A data backup method is provided. The data backup method includes maintaining a logical-to-physical table (L2P table) in a memory, where the L2P table records a plurality of physical addresses respectively corresponding to a plurality of first logical addresses and a plurality of trim marks; receiving a trim command, wherein the trim command indicates that data stored in one or more second logical addresses is invalid; according to the trim command, not clearing physical addresses respectively corresponding to the second logical addresses in the L2P table, and changing trim marks respectively corresponding to the second logical addresses from a first bit value to a second bit value; and when a predetermined condition is met, updating the L2P table according to the trim marks, and storing the updated L2P table into a rewritable non-volatile memory module.

Abstract: A memory management method is provided. The method includes writing a plurality of first data into a first physical block and storing a first stamp corresponding to the first physical block; writing a plurality of second data into a second physical block and storing a second stamp corresponding to the second physical block, wherein the second stamp is greater than the first stamp; moving a plurality of third data in the first data in the first physical block to a third physical block, wherein the third data are valid data and the third data match a specific type; and storing a third stamp corresponding to the third physical block and updating the second stamp corresponding to the second physical block to a fourth stamp, wherein the fourth stamp is greater than the third stamp and the third stamp is greater than or equal to the second stamp.

Abstract: A data writing method is provided. The method includes writing a first write data into a first physical sub-unit in a storage device according to a first write command; recording a first meta data corresponding to the first write data into the storage device; writing a second write data into a second physical sub-unit in the storage device; recording a second meta data corresponding to the second write data into the storage device. A second write identification code of the second meta data is set to be different from a first write identification code of the first meta data if the second physical unit is closely adjacent to the first physical unit and the second write data is written according to the second write command; and whether the second write data is valid or invalid is determined according to the second meta data if a special event occurs.

Abstract: A data writing method is provided. The method includes writing a first write data into a first physical sub-unit in a storage device according to a first write command; recording a first meta data corresponding to the first write data into the storage device; writing a second write data into a second physical sub-unit in the storage device; recording a second meta data corresponding to the second write data into the storage device. A second write identification code of the second meta data is set to be different from a first write identification code of the first meta data if the second physical unit is closely adjacent to the first physical unit and the second write data is written according to the second write command; and whether the second write data is valid or invalid is determined according to the second meta data if a special event occurs.

Abstract: A memory management method is provided. The method includes writing a plurality of first data into a first physical block and storing a first stamp corresponding to the first physical block; writing a plurality of second data into a second physical block and storing a second stamp corresponding to the second physical block, wherein the second stamp is greater than the first stamp; moving a plurality of third data in the first data in the first physical block to a third physical block, wherein the third data are valid data and the third data match a specific type; and storing a third stamp corresponding to the third physical block and updating the second stamp corresponding to the second physical block to a fourth stamp, wherein the fourth stamp is greater than the third stamp and the third stamp is greater than or equal to the second stamp.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data; detecting a total number of first type physical erasing units not storing valid data; performing a first procedure if the total number is less than a first threshold value. The first procedure includes: receiving second data from a rewritable non-volatile memory module; temporarily storing the first data and the second data; dynamically determining a writing rule according to a storage status of the rewritable non-volatile memory module and storing the first data and the second data into the rewritable non-volatile memory module according to the determined writing rule. Therefore, a writing speed of the rewritable non-volatile memory module corresponding to the first data in the first procedure becomes stable.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data; detecting a total number of first type physical erasing units not storing valid data; performing a first procedure if the total number is less than a first threshold value. The first procedure includes: receiving second data from a rewritable non-volatile memory module; temporarily storing the first data and the second data; dynamically determining a writing rule according to a storage status of the rewritable non-volatile memory module and storing the first data and the second data into the rewritable non-volatile memory module according to the determined writing rule. Therefore, a writing speed of the rewritable non-volatile memory module corresponding to the first data in the first procedure becomes stable.