Abstract: A package structure includes a redistribution structure, a first semiconductor die, a first passive component, a second semiconductor die, a first insulating encapsulant, a second insulating encapsulant, a second passive component and a global shielding structure. The redistribution structure includes dielectric layers and conductive layers alternately stacked. The first semiconductor die, the first passive component and the second semiconductor die are disposed on a first surface of the redistribution structure. The first insulating encapsulant is encapsulating the first semiconductor die and the first passive component. The second insulating encapsulant is encapsulating the second semiconductor die, wherein the second insulating encapsulant is separated from the first insulating encapsulant. The second passive component is disposed on a second surface of the redistribution structure.

Abstract: Methods for improving joinder between a surface-mount package and a printed circuit board are disclosed. The warpage at a corner of the surface-mount package and at a corresponding corner of a joint area on the printed circuit board are measured to determine the degree of mismatch. A mini-pad is applied to the corner between the surface-mount package and the joint area on the printed circuit board. The thickness of the mini-pad pushes against the surface-mount package and the printed circuit board, reducing the degree of mismatch below a critical dimension of a ball grid array of the surface-mount package. The surface-mount package can then be soldered to the joint area, reducing or preventing the formation of solder bridges and short circuits.

Abstract: A cover kit for a firearm handguard having a plurality of slots, the cover kit includes a bottom side detachably mounted on the slot of the firearm handguard; fastening means for securing the cover body to cover the slot on the firearm handguard; a cable secured between the bottom side of the cover body and the firearm handguard; wherein the bottom side comprises a plurality of horizontal tunnels and a plurality of transversal tunnels intersected with the transversal tunnels; wherein the cable is embedded in at least one of transversal tunnel and/or the horizontal tunnels.

Abstract: A package-on-package (PoP) structure includes a first package structure and a second package structure stacked on the first package structure. The first package structure includes a die, conductive structures, an encapsulant, and a conductive pattern layer. The conductive structures surround the die. The encapsulant laterally encapsulates the die and the conductive structures. The conductive pattern layer is disposed over and in physical contact with a top surface of the encapsulant and top surfaces of the conductive structures. An entire bottom surface of the conductive pattern layer is located at a same level height, and an entirety of the top surface of the encapsulant and an entirety of the top surfaces of the conductive structures are located at the same level height.

Abstract: Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.

Abstract: A semiconductor package is provided. The semiconductor package includes an encapsulating layer, a semiconductor die formed in the encapsulating layer, and an interposer structure covering the encapsulating layer. The interposer structure includes an insulating base having a first surface facing the encapsulating layer, and a second surface opposite the first surface. The interposer structure also includes insulating features formed on the first surface of the insulating base and extending into the encapsulating layer. The insulating features is arranged in a matrix and faces a top surface of the semiconductor die. The interposer structure further includes first conductive features formed on the first surface of the insulating base and extending into the encapsulating layer. The first conductive features surround the matrix of the insulating features.

Abstract: An integrated fan-out package includes a first redistribution structure, a die, a plurality of conductive structures, an encapsulant, and a second redistribution structure. The die is bonded to the first redistribution structure through flip-chip bonding. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The second redistribution structure is disposed on the encapsulant and is electrically connected to the first redistribution structure through the conductive structures. The second redistribution structure includes at least one conductive pattern layer that is in physical contact with the encapsulant. Top surfaces of the conductive structures contacting the second redistribution structure are coplanar with a top surface of the encapsulant.

Abstract: Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.

Abstract: A manufacturing method of a package-on-package structure includes forming a first package structure and staking a second package structure over the first package structure. The first package structure is formed by at least the following steps. A first redistribution structure is provided. Conductive structures are formed on the first redistribution structure. A die is placed between the conductive structures. The die and the conductive structures are encapsulated by an encapsulant. The encapsulant is planarized such that an entirety of a top surface of the encapsulant is coplanar with an entirety of top surfaces of the conductive structures. A second redistribution structure is formed on the encapsulant. The second redistribution structure includes a conductive pattern layer that is in physical contact with the top surfaces of the encapsulant and the conductive structures. An entire bottom surface of the conductive pattern layer is located at a same level height.

Abstract: Methods for improving joinder between a surface-mount package and a printed circuit board are disclosed. The warpage at a corner of the surface-mount package and at a corresponding corner of a joint area on the printed circuit board are measured to determine the degree of mismatch. A mini-pad is applied to the corner between the surface-mount package and the joint area on the printed circuit board. The thickness of the mini-pad pushes against the surface-mount package and the printed circuit board, reducing the degree of mismatch below a critical dimension of a ball grid array of the surface-mount package. The surface-mount package can then be soldered to the joint area, reducing or preventing the formation of solder bridges and short circuits.

Abstract: A package structure includes a redistribution structure, a first semiconductor die, a first passive component, a second semiconductor die, a first insulating encapsulant, a second insulating encapsulant, a second passive component and a global shielding structure. The redistribution structure includes dielectric layers and conductive layers alternately stacked. The first semiconductor die, the first passive component and the second semiconductor die are disposed on a first surface of the redistribution structure. The first insulating encapsulant is encapsulating the first semiconductor die and the first passive component. The second insulating encapsulant is encapsulating the second semiconductor die, wherein the second insulating encapsulant is separated from the first insulating encapsulant. The second passive component is disposed on a second surface of the redistribution structure.

Abstract: A package structure includes a redistribution structure, a first semiconductor die, a first passive component, a second semiconductor die, a first insulating encapsulant, a second insulating encapsulant, a second passive component and a global shielding structure. The redistribution structure includes dielectric layers and conductive layers alternately stacked. The first semiconductor die, the first passive component and the second semiconductor die are disposed on a first surface of the redistribution structure. The first insulating encapsulant is encapsulating the first semiconductor die and the first passive component. The second insulating encapsulant is encapsulating the second semiconductor die, wherein the second insulating encapsulant is separated from the first insulating encapsulant. The second passive component is disposed on a second surface of the redistribution structure.

Abstract: A semiconductor package includes a redistribution structure and an encapsulated die electrically connected to the redistribution structure. The redistribution structure includes a first conductive pad, first and second conductive vias, and a first dielectric layer. The first conductive pad includes opposing first and second sides, the first conductive via lands on the first side of the first conductive pad and is tapered in a direction from the first side toward the second side. The second conductive via lands on the second side of the first conductive pad and is tapered in a direction from the second side toward the first side. The first dielectric layer laterally covers the first conductive pad and the first conductive via, and the first dielectric layer includes opposing first and second surfaces. The encapsulated die is disposed below the first side of the first conductive via.

Abstract: A semiconductor package is provided. The semiconductor package includes an encapsulating layer, a semiconductor die formed in the encapsulating layer, and an interposer structure covering the encapsulating layer. The interposer structure includes an insulating base having a first surface facing the encapsulating layer, and a second surface opposite the first surface. The interposer structure also includes insulating features formed on the first surface of the insulating base and extending into the encapsulating layer. The insulating features is arranged in a matrix and faces a top surface of the semiconductor die. The interposer structure further includes first conductive features formed on the first surface of the insulating base and extending into the encapsulating layer. The first conductive features surround the matrix of the insulating features.

Abstract: A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

Abstract: A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

Abstract: Methods for improving joinder between a surface-mount package and a printed circuit board are disclosed. The warpage at a corner of the surface-mount package and at a corresponding corner of a joint area on the printed circuit board are measured to determine the degree of mismatch. A mini-pad is applied to the corner between the surface-mount package and the joint area on the printed circuit board. The thickness of the mini-pad pushes against the surface-mount package and the printed circuit board, reducing the degree of mismatch below a critical dimension of a ball grid array of the surface-mount package. The surface-mount package can then be soldered to the joint area, reducing or preventing the formation of solder bridges and short circuits.

Abstract: A semiconductor package is provided. The semiconductor package includes an encapsulating layer, a semiconductor die formed in the encapsulating layer, and an interposer structure covering the encapsulating layer. The interposer structure includes an insulating base having a first surface facing the encapsulating layer, and a second surface opposite the first surface. The interposer structure also includes insulting features formed on the first surface of the insulating base and extending into the encapsulating layer. The insulting features are arranged in a matrix and face a top surface of the semiconductor die. The interposer structure further includes first conductive features formed on the first surface of the insulating base and extending into the encapsulating layer. The first conductive features surround the matrix of the plurality of insulting features.

Abstract: A semiconductor package is provided. The semiconductor package includes a redistribution structure, a semiconductor die, and an interposer structure. The interposer structure includes an insulating base having a first surface facing the semiconductor die and a second surface opposite to the first surface and conductive features formed over the insulating base. The conductive features include first portions on the first surface of the insulating base and vertically overlapping the semiconductor die, second portions on the first surface of the insulating base and located outside a projection area of the semiconductor die in a top view, third portions on the second surface of the insulating base and vertically overlapping the semiconductor die, and fourth portions on the second surface of the insulating base and located outside the projection area of the semiconductor die in the top view. The interposer structure includes capping layers and dielectric features.

Abstract: A package structure includes a redistribution structure, a first semiconductor die, a first passive component, a second semiconductor die, a first insulating encapsulant, a second insulating encapsulant, a second passive component and a global shielding structure. The redistribution structure includes dielectric layers and conductive layers alternately stacked. The first semiconductor die, the first passive component and the second semiconductor die are disposed on a first surface of the redistribution structure. The first insulating encapsulant is encapsulating the first semiconductor die and the first passive component. The second insulating encapsulant is encapsulating the second semiconductor die, wherein the second insulating encapsulant is separated from the first insulating encapsulant. The second passive component is disposed on a second surface of the redistribution structure.