Patents by Inventor Shih Tzung Su

Shih Tzung Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11289596
    Abstract: A split gate power device is disclosed having a trench containing a U-shaped gate that, when biased above a threshold voltage, creates a conductive channel in a p-well. Below the gate is a field plate in the trench, coupled to the source electrode, for spreading the electric field along the trench to improve the breakdown voltage. The top gate poly is initially formed relatively thin so that it can be patterned using non-CMP techniques, such as dry etching or wet etching. As such, the power device can be fabricated in conventional fabs not having CMP capability. In one embodiment, the thin gate has vertical and lateral portions that create conductive vertical and lateral channels in a p-well. In another embodiment, the thin gate has only vertical portions along the trench sidewalls for minimizing surface area and gate capacitance.
    Type: Grant
    Filed: February 5, 2020
    Date of Patent: March 29, 2022
    Assignee: MaxPower Semiconductor, Inc.
    Inventors: Jun Zeng, Kui Pu, Mohamed N. Darwish, Shih-Tzung Su
  • Publication number: 20220052170
    Abstract: A vertical trench MOSFET is formed with deep P-shield regions below portions of each gate trench. The deep P-shield regions are effectively downward extensions of the P-body/well, and are electrically coupled to the top source electrode. The P-shield regions abut the bottom portions and lower sides of the gate trenches, so that those small portions of the gate trench do not create N-channels and do not conduct current. Accordingly, each trench comprises an active gate portion that creates an N-channel and a small non-active portion that abuts the P-shield regions. The spacing of the P-shield regions along each gate trench is selected to achieve the desired electric field spreading to protect the gate oxide from punch-through. No field plate trenches are needed to be formed in the active area of the MOSFET. The deep P-shield regions are formed by implanting P-type dopants through the bottom of the trenches.
    Type: Application
    Filed: August 5, 2021
    Publication date: February 17, 2022
    Inventors: Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su
  • Publication number: 20200273987
    Abstract: A split gate power device is disclosed having a trench containing a U-shaped gate that, when biased above a threshold voltage, creates a conductive channel in a p-well. Below the gate is a field plate in the trench, coupled to the source electrode, for spreading the electric field along the trench to improve the breakdown voltage. The top gate poly is initially formed relatively thin so that it can be patterned using non-CMP techniques, such as dry etching or wet etching. As such, the power device can be fabricated in conventional fabs not having CMP capability. In one embodiment, the thin gate has vertical and lateral portions that create conductive vertical and lateral channels in a p-well. In another embodiment, the thin gate has only vertical portions along the trench sidewalls for minimizing surface area and gate capacitance.
    Type: Application
    Filed: February 5, 2020
    Publication date: August 27, 2020
    Inventors: Jun Zeng, Kui Pu, Mohamed N. Darwish, Shih-Tzung Su
  • Patent number: 10157983
    Abstract: In one embodiment, a power MOSFET or IGBT cell includes an N-type drift region grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed over the drift region. A P-well is formed over the N-type layer, and an N+ source/emitter region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into a trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction in the N-type layer along the sidewalls of the trench to reduce on-resistance. A vertical shield field plate is also in the trench and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. Floating P-islands in the N-type drift region increase breakdown voltage and reduce the saturation current.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: December 18, 2018
    Assignee: MAXPOWER SEMICONDUCTOR INC.
    Inventors: Jun Zeng, Mohamed N. Darwish, Wenfang Du, Richard A. Blanchard, Kui Pu, Shih-Tzung Su
  • Publication number: 20180261666
    Abstract: In one embodiment, a power MOSFET or IGBT cell includes an N-type drift region grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed over the drift region. A P-well is formed over the N-type layer, and an N+ source/emitter region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into a trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction in the N-type layer along the sidewalls of the trench to reduce on-resistance. A vertical shield field plate is also in the trench and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. Floating P-islands in the N-type drift region increase breakdown voltage and reduce the saturation current.
    Type: Application
    Filed: February 12, 2018
    Publication date: September 13, 2018
    Inventors: Jun Zeng, Mohamed N. Darwish, Wenfang Du, Richard A. Blanchard, Kui Pu, Shih-Tzung Su
  • Patent number: 9947779
    Abstract: In one embodiment, a power MOSFET cell includes an N+ silicon substrate having a drain electrode. An N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed along with a trench having sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into the trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. A buried layer and sinker enable the use of a topside drain electrode.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: April 17, 2018
    Assignee: MaxPower Semiconductor Inc.
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Publication number: 20170330962
    Abstract: In one embodiment, a power MOSFET cell includes an N+ silicon substrate having a drain electrode. An N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed along with a trench having sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into the trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. A buried layer and sinker enable the use of a topside drain electrode.
    Type: Application
    Filed: July 28, 2017
    Publication date: November 16, 2017
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Patent number: 9761702
    Abstract: In one embodiment, a power MOSFET cell includes an N+ silicon substrate having a drain electrode. An N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed along with a trench having sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into the trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. A buried layer and sinker enable the use of a topside drain electrode.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: September 12, 2017
    Assignee: MaxPower Semiconductor
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Publication number: 20160359029
    Abstract: In one embodiment, a power MOSFET cell includes an N+ silicon substrate having a drain electrode. An N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed along with a trench having sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into the trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. A buried layer and sinker enable the use of a topside drain electrode.
    Type: Application
    Filed: August 18, 2016
    Publication date: December 8, 2016
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Patent number: 9461127
    Abstract: A power MOSFET cell includes an N+ silicon substrate having a drain electrode. A low dopant concentration N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed and etched to have sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension next to the top portion of the sidewalls. A positive gate voltage inverts the lateral channel and increases the conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and extends virtually the entire length of the sidewalls. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: October 4, 2016
    Assignee: MaxPower Semiconductor, Inc.
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Publication number: 20160027880
    Abstract: A power MOSFET cell includes an N+ silicon substrate having a drain electrode. A low dopant concentration N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed and etched to have sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension next to the top portion of the sidewalls. A positive gate voltage inverts the lateral channel and increases the conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and extends virtually the entire length of the sidewalls. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage.
    Type: Application
    Filed: October 1, 2015
    Publication date: January 28, 2016
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Patent number: 9184248
    Abstract: A power MOSFET cell includes an N+ silicon substrate having a drain electrode. A low dopant concentration N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed and etched to have sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension next to the top portion of the sidewalls. A positive gate voltage inverts the lateral channel and increases the conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and extends virtually the entire length of the sidewalls. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: November 10, 2015
    Assignee: MaxPower Semiconductor Inc.
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Publication number: 20150221765
    Abstract: A power MOSFET cell includes an N+ silicon substrate having a drain electrode. A low dopant concentration N-type drift layer is grown over the substrate. Alternating N and P-type columns are formed over the drift layer with a higher dopant concentration. An N-type layer, having a higher dopant concentration than the drift region, is then formed and etched to have sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and next to the sidewalls as a vertical field plate. A source electrode contacts the P-well and source region. A positive gate voltage inverts the lateral channel and increases the conduction along the sidewalls. Current between the source and drain flows laterally and then vertically through the various N layers. On resistance is reduced and the breakdown voltage is increased.
    Type: Application
    Filed: July 22, 2014
    Publication date: August 6, 2015
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Publication number: 20150221731
    Abstract: A power MOSFET cell includes an N+ silicon substrate having a drain electrode. A low dopant concentration N-type drift layer is grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed and etched to have sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension next to the top portion of the sidewalls. A positive gate voltage inverts the lateral channel and increases the conduction along the sidewalls to reduce on-resistance. A vertical shield field plate is also located next to the sidewalls and extends virtually the entire length of the sidewalls. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage.
    Type: Application
    Filed: February 6, 2015
    Publication date: August 6, 2015
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Patent number: 9093522
    Abstract: A power MOSFET cell includes an N+ silicon substrate having a drain electrode. A low dopant concentration N-type drift layer is grown over the substrate. Alternating N and P-type columns are formed over the drift layer with a higher dopant concentration. An N-type layer, having a higher dopant concentration than the drift region, is then formed and etched to have sidewalls. A P-well is formed in the N-type layer, and an N+ source region is formed in the P-well. A gate is formed over the P-well's lateral channel and next to the sidewalls as a vertical field plate. A source electrode contacts the P-well and source region. A positive gate voltage inverts the lateral channel and increases the conduction along the sidewalls. Current between the source and drain flows laterally and then vertically through the various N layers. On resistance is reduced and the breakdown voltage is increased.
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: July 28, 2015
    Assignee: MaxPower Semiconductor, Inc.
    Inventors: Jun Zeng, Mohamed N. Darwish, Kui Pu, Shih-Tzung Su
  • Patent number: 8581341
    Abstract: Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: November 12, 2013
    Assignee: MaxPower Semiconductor, Inc.
    Inventors: Mohamed N. Darwish, Jun Zeng, Shih-Tzung Su, Richard A. Blanchard
  • Patent number: 8294235
    Abstract: A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
    Type: Grant
    Filed: April 12, 2011
    Date of Patent: October 23, 2012
    Assignee: MaxPower Semiconductor, Inc.
    Inventors: Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su
  • Publication number: 20120187473
    Abstract: A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
    Type: Application
    Filed: April 12, 2011
    Publication date: July 26, 2012
    Applicant: MAXPOWER SEMICONDUCTOR INC.
    Inventors: Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su
  • Publication number: 20110254088
    Abstract: Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).
    Type: Application
    Filed: April 19, 2011
    Publication date: October 20, 2011
    Applicant: MAXPOWER SEMICONDUCTOR INC.
    Inventors: Mohamed N. Darwish, Jun Zeng, Shih-Tzung Su, Richard A. Blanchard
  • Patent number: 7923804
    Abstract: A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
    Type: Grant
    Filed: February 9, 2009
    Date of Patent: April 12, 2011
    Assignee: MaxPower Semiconductor Inc.
    Inventors: Jun Zeng, Mohamed N. Darwish, Shih-Tzung Su