Patents by Inventor Shih-Wei Lee

Shih-Wei Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200221608
    Abstract: A heat-dissipating structure includes a plurality of heat-dissipating layers and at least one heat-buffering layer. The heat-dissipating layers are stacked together. Each of the heat-dissipating layers is formed by a thermally conductive metal coated polymer fiber or thermally conductive metal fiber. The at least one heat-buffering layer is disposed between the heat-dissipating layers.
    Type: Application
    Filed: May 31, 2019
    Publication date: July 9, 2020
    Inventors: CHIA-HUNG CHANG, SHIH-WEI LEE, HAN-CHOU LIAO
  • Patent number: 10688720
    Abstract: A 3-D printing apparatus includes a body, a disposed in the body, a control module, a print head module assembled to the body and electrically connected with the control module and a sensing module. The sensing module is assembled to the print head module to move along with the print head module in the body and electrically connected with the control module and includes a probe. The control module drives the print head module to move and causes a part of the body to hit the sensing module, thereby driving the probe to protrude from the print head module to form a first state. In the first state, the control module drives the print head module to move and causes the probe to contact the platform, thereby determining a surface state of the platform.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: June 23, 2020
    Assignees: XYZprinting, Inc., Kinpo Electronics, Inc.
    Inventors: Yang-Teh Lee, Chien-Chih Chen, Shih-Wei Huang
  • Patent number: 10685827
    Abstract: A quadrupole ion trap apparatus includes a main electrode, a first end-cap electrode, a second end-cap electrode, and a phase-controlled waveform synthesizer. The phase-controlled waveform synthesizer generates a main RE waveform for the main electrode. The main RE waveform includes a plurality of sinuous waveform segments each of which is a part of a sine wave, and a plurality of phase conjunction segments each of which is non-sinuous. Each of the sinuous waveform segments is bridged to another sinuous waveform segment via one of the phase conjunction segments, so as to perform ordering of micro motions of sample ions trapped by the electrodes.
    Type: Grant
    Filed: May 8, 2018
    Date of Patent: June 16, 2020
    Assignee: ACROMASS TECHNOLOGIES, INC.
    Inventors: Chun-Yen Cheng, Yao-Hsin Tseng, Szu-Wei Chou, Yi-Kun Lee, Shih-Chieh Yang, Hung-Liang Hsieh
  • Patent number: 10678298
    Abstract: An electronic device includes a casing, a speaker enclosure and an actuating and sensing module. The casing has an opening. The speaker enclosure is disposed within the casing to enclose a speaker. The speaker enclosure is in communication with the opening of the casing. The actuating and sensing module is disposed within the speaker enclosure. The actuating and sensing module comprises a fluid transportation device and a sensor. The fluid transportation device is driven to transport a fluid from outside the casing into the speaker enclosure through the opening of the casing to make the fluid sensed by the sensor.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: June 9, 2020
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Ta-Wei Hsueh, Shih-Chang Chen, Li-Pang Mo, Chi-Feng Huang, Yung-Lung Han, Wei-Ming Lee
  • Patent number: 10664092
    Abstract: A portable electronic device, an operating method for the same, and a non-transitory computer readable recording medium are provided. The portable electronic device includes a body, a touch display screen and an edge sensor. The touch display screen is disposed on the body. The edge sensor is disposed adjacent to an edge of the body. The operating method includes the following step. When an event is generated according to a first action sensed by the edge sensor, a touch function of a region of the touch display screen or the whole touch display screen is disabled.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: May 26, 2020
    Assignee: HTC Corporation
    Inventors: Chia-Yao Lin, Yen-Hung Lin, Shih-Lung Lin, Chia-Chu Ho, Hsuan-Yi Lee, Kuan-Wei Li, Jian-Shuen Chen, Yu-Hung Chen, Chun-Hung Hsieh, Pin-Yu Huang
  • Patent number: 10644060
    Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: May 5, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
  • Publication number: 20200129646
    Abstract: A radioactive labeled long-acting peptide-targeting pharmaceutical and production method, in which the peptide targeted pharmaceutical is firstly dissolved in a solution, followed by labeling the radioactive at a high temperature, and the dosage of the pharmaceutical with radioactive labeling is expected to be reduced and labeling efficiency is improved, and no further purification by filtration is required, which shortens the preparation process and reduces personnel exposure in the working environment. The radioactive labeled long-acting peptide-targeting pharmaceutical can increase the specific binding capacity of tumors and reduce the non-specific accumulation in normal tissues. It can be applied to the field of tumor and nuclear medicine for diagnosis and treatment of tumors and/or tumor metastases with efficacy and precision treatment.
    Type: Application
    Filed: October 31, 2018
    Publication date: April 30, 2020
    Inventors: Ming-Hsin Li, Chih-Hsien Chang, Su-Jung Chen, Shih-Ying Lee, Sheng-Nan Lo, Ming-Wei Chen, Yuan-Ruei Huang, Chun-Fang Feng, Shih-Wei Lo, Cheng-Hui Chuang
  • Patent number: 10615329
    Abstract: A piezoelectric actuator includes a suspension plate, a piezoelectric ceramic plate, an outer frame and a bracket. The suspension plate is permitted to undergo a curvy vibration from a middle portion to a periphery portion. The piezoelectric ceramic plate is attached on the suspension plate. When a voltage is applied to the piezoelectric ceramic plate, the suspension plate is driven to undergo the curvy vibration. The outer frame is arranged around the suspension plate. The bracket is connected between the suspension plate and the outer frame for elastically supporting the suspension plate, and includes an intermediate part formed in a vacant space between the suspension plate and the outer frame and in parallel with the outer frame and the suspension plate, a first connecting part arranged between the intermediate part and the suspension plate, and a second connecting part arranged between the intermediate part and the outer frame.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: April 7, 2020
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Shih-Chang Chen, Chi-Feng Huang, Yung-Lung Han, Jia-Yu Liao, Shou-Hung Chen, Che-Wei Huang, Hung-Hsin Liao, Chao-Chih Chen, Jheng-Wei Chen, Ying-Lun Chang, Chia-Hao Chang, Wei-Ming Lee
  • Publication number: 20200105763
    Abstract: A semiconductor structure includes an active area in a substrate, a device isolation region surrounding the active area, first and second bit line structures on the substrate, a conductive diffusion region in the active area between the first and the second bit line structures, and a contact hole between the first and the second bit line structures. The contact hole partially exposes the conductive diffusion region. A buried plug layer is disposed in the contact hole and in direct contact with the conductive diffusion region. A storage node contact layer is disposed on the buried plug layer within the contact hole. The storage node contact layer has a downwardly protruding portion surrounded by the buried plug layer. The buried plug layer has a U-shaped cross-sectional profile.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Inventors: Po-Han Wu, Li-Wei Feng, Shih-Han Hung, Fu-Che Lee, Chien-Cheng Tsai
  • Patent number: 10584695
    Abstract: A miniature fluid control device includes a piezoelectric actuator and a housing. The piezoelectric actuator comprises a suspension plate, an outer frame, at least one bracket and a piezoelectric ceramic plate. The piezoelectric ceramic plate is attached on a first surface of the suspension plate and has a length not larger than that of the suspension plate. The housing includes a gas collecting plate and a base. The gas collecting plate is a frame body with a sidewall and comprises a plurality of perforations. The base seals a bottom of the piezoelectric actuator and has a central aperture corresponding to the middle portion of the suspension plate. When the voltage is applied to the piezoelectric actuator, the suspension plate is permitted to undergo the curvy vibration, the fluid is transferred from the central aperture of the base to the gas-collecting chamber, and exited from the perforations.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: March 10, 2020
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Shih-Chang Chen, Chi-Feng Huang, Yung-Lung Han, Jia-Yu Liao, Shou-Hung Chen, Che-Wei Huang, Hung-Hsin Liao, Chao-Chih Chen, Jheng-Wei Chen, Ying-Lun Chang, Chia-Hao Chang, Wei-Ming Lee
  • Publication number: 20200075342
    Abstract: Generally, this disclosure provides examples relating to tuning etch rates of dielectric material. In an embodiment, a dielectric material is conformally deposited in first and second trenches in a substrate. Merged lateral growth fronts of the first dielectric material in the first trench form a seam in the first trench. The dielectric material is treated. The treating causes a species to be on first and second upper surfaces of the dielectric material in the first and second trenches, respectively, to be in the seam, and to diffuse into the respective dielectric material in the first and second trenches. After the treating, the respective dielectric material is etched. A ratio of an etch rate of the dielectric material in the second trench to an etch rate of the dielectric material in the first trench is altered by presence of the species in the dielectric material during the etching.
    Type: Application
    Filed: August 31, 2018
    Publication date: March 5, 2020
    Inventors: Shih-Chiang Chen, Chun-Hung Lee, Ryan Chia-jen Chen, Hung-Wei Lin, Lung-Kai Mao
  • Publication number: 20200061712
    Abstract: A method for manufacturing a titanium based product includes the following steps. The first step is providing a titanium hydride ingot. The next step is pre-sintering the titanium hydride ingot to dehydrogenate the titanium hydride ingot according to a first temperature control mode, so as to form a titanium ingot. The next step is machining the titanium ingot to form a titanium semi-product having a desired shape. The last step is post-sintering the titanium semi-product according to a second temperature control mode that is different from the first temperature control mode, so as to form the titanium based product.
    Type: Application
    Filed: December 13, 2018
    Publication date: February 27, 2020
    Inventors: CHIA-HUNG CHANG, HAN-CHOU LIAO, Shih-Wei Lee
  • Publication number: 20200043813
    Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. A structure in a semiconductor device is identified as including a test object for an APT procedure. A target region is identified in the structure where an APT specimen will be obtained. The target region is analyzed to determine whether a challenging component feature exists therein. A challenging component may include a hard-to-evaporate material, a hollow region, or a material unidentifiable with respect to the test object, or other structural features that pose a challenge to a successful APT analysis. If it is determined that a challenging component exists in the target region, the challenging component is replaced with a more suitable material before the APT specimen is prepared.
    Type: Application
    Filed: June 21, 2019
    Publication date: February 6, 2020
    Inventors: Shih-Wei HUNG, Jang Jung Lee
  • Patent number: 10543367
    Abstract: The invention provides transcranial electrostimulation by combining transcranial direct current stimulation (tDCS) and theta burst stimulation (TBS) to achieve an unexpected therapeutic effect in various brain or neural diseases. Accordingly, the invention provides a mode of direct current with biphasic square wave pulses in the treatment of brain or neural diseases. Also provided are methods of employing the transcranial electrostimulation of the invention and applications of the transcranial electrostimulation of the invention.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: January 28, 2020
    Assignees: TAIPEI MEDICAL UNIVERSITY, NATIONAL APPLIED RESEARCH LABORATORIES
    Inventors: Chih-Wei Peng, Shih-Ching Chen, Yu Ting Li, Hsiang Ching Lee, Jia-Jin J. Chen, Tsung-Hsun Hsieh, Chien-Hung Lai, Jiunn-Horng Kang
  • Patent number: 10546964
    Abstract: A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: January 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wei Chen, Wen-Chin Lee, Wen-Tsai Yen, Chung-Hsien Wu, Kuan-Chu Chen
  • Patent number: 10529719
    Abstract: A semiconductor structure includes an active area in a substrate, a device isolation region surrounding the active area, first and second bit line structures on the substrate, a conductive diffusion region in the active area between the first and the second bit line structures, and a contact hole between the first and the second bit line structures. The contact hole partially exposes the conductive diffusion region. A buried plug layer is disposed in the contact hole and in direct contact with the conductive diffusion region. A storage node contact layer is disposed on the buried plug layer within the contact hole. The storage node contact layer has a downwardly protruding portion surrounded by the buried plug layer. The buried plug layer has a U-shaped cross-sectional profile.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: January 7, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Po-Han Wu, Li-Wei Feng, Shih-Han Hung, Fu-Che Lee, Chien-Cheng Tsai
  • Patent number: 10529911
    Abstract: A piezoelectric actuator includes a suspension plate, a piezoelectric ceramic plate, an outer frame and a bracket. The suspension plate is permitted to undergo a curvy vibration from a middle portion to a periphery portion. The piezoelectric ceramic plate is attached on the suspension plate. When a voltage is applied to the piezoelectric ceramic plate, the suspension plate is driven to undergo the curvy vibration. The outer frame is arranged around the suspension plate. The bracket is connected between the suspension plate and the outer frame for elastically supporting the suspension plate, and includes an intermediate part formed in a vacant space between the suspension plate and the outer frame and in parallel with the outer frame and the suspension plate, a first connecting part arranged between the intermediate part and the suspension plate, and a second connecting part arranged between the intermediate part and the outer frame.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: January 7, 2020
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Shih-Chang Chen, Chi-Feng Huang, Yung-Lung Han, Jia-Yu Liao, Shou-Hung Chen, Che-Wei Huang, Hung-Hsin Liao, Chao-Chih Chen, Jheng-Wei Chen, Ying-Lun Chang, Chia-Hao Chang, Wei-Ming Lee
  • Publication number: 20200006033
    Abstract: A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system , a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.
    Type: Application
    Filed: June 26, 2019
    Publication date: January 2, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wei Hung, Jang Jung Lee
  • Patent number: 10522956
    Abstract: The present disclosure discloses an electronic device including an electronic apparatus and an electric connector. The electronic apparatus includes an electric connection port. The electric connection port includes a concave trench, a first and second conductive strips are disposed in the concave trench. The first conductive strip and the second conductive strip respectively extend along an extending direction of the concave trench. The electric connector includes a first and second elastic contacts which are exposed and protruded outward. When the electric connector is plugged into the electric connection port, the first elastic contact is in contact with the first conductive strip, and the second elastic contact is in contact with the second conductive strip. The electric connection port may accommodate the electric connector, so that the electric connector may be selectively plugged to any position on the electric connection port along the extending direction of the concave trench.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: December 31, 2019
    Assignee: PEGATRON CORPORATION
    Inventors: Yi-Wei Lee, Hsien-Tsung Lee, Shih-Hao Chen
  • Publication number: 20190393445
    Abstract: A light emitting device including a base, a first electrode, a barrier structure layer, a light emitting layer and a second electrode is provided. The barrier structure layer includes a first barrier layer in contact with the first electrode, a second barrier layer and a third barrier layer. The first barrier layer, the second barrier layer and the third barrier layer stack sequentially. The materials of the first barrier layer and the third barrier layer include a dielectric material. The material of the second barrier layer includes a metal material. A boundary between the third barrier layer and the second barrier layer keeps a vertical distance from the first electrode. The light emitting structure layer is disposed between the first electrode and the second electrode and surrounded by the barrier structure layer. The thickness of the light emitting structure layer is not greater than the vertical distance.
    Type: Application
    Filed: June 13, 2019
    Publication date: December 26, 2019
    Applicant: Au Optronics Corporation
    Inventors: Kent-Yi Lee, Wen-Pin Chen, Wen-Tai Chen, Kuo-Jui Chang, Tsu-Wei Chen, Kuo-Kuang Chen, Shih-Hsing Hung