Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

Abstract: An antenna module includes a first metal plate and a frame body. The frame body surrounds the first metal plate. The frame body includes a first antenna radiator, a second antenna radiator, a third antenna radiator, a first breakpoint and a second breakpoint. The first antenna radiator includes a first feeding end and excites a first frequency band. The second antenna radiator includes a second feeding end and excites a second frequency band. The third antenna radiator includes a third feeding end and excites a third frequency band. The first breakpoint is located between the first antenna radiator and the second antenna radiator. The second breakpoint is located between the second antenna radiator and the third antenna radiator. An electronic device including the above-mentioned antenna module is also provided.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: A waterproof container is adapted for an electronic device with a touch screen. The waterproof container includes an upper component and a lower component. The upper component includes a first layer, a second layer and a third layer. The second layer is disposed between the first layer and the third layer. A second touched part of the second layer is connected to a first touched part of the first layer by a plurality of first connections. The second touched part of the second layer is connected to a third touched part of the third layer by a plurality of second connections, and the plurality of first connections and the plurality of second connections are staggered relative to each other. The lower component is connected to the upper component. An accommodating space is enclosed by the lower component and the upper component for accommodating the electronic device.

Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.

Abstract: A measurement system includes a camera and a processor. The camera is configured to capture a measurement card image of a measurement card, and the measurement card image includes a number of feature pattern images. The processor is electrically connected to the camera and configured for analyzing the feature pattern images to obtain a feature point coordinate of a feature point of each feature pattern image, and inputting the feature point coordinates into a conversion matrix to obtain a tip coordinate of a tip of the measurement card.

Abstract: A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.

Abstract: A server includes a chassis and a storage module. The storage module is disposed in the chassis. The storage module includes a base, a first electrical connector, a storage device, a connecting member and a first fixing member. A first side of the base has a first fixing portion. The first electrical connector is disposed at a second side of the base, wherein the second side is opposite to the first side. The storage device has a second electrical connector. The connecting member is connected to the storage device. The first fixing member is disposed on the connecting member. The second electrical connector is connected to the first electrical connector and the first fixing member is fixed to the first fixing portion, so as to fix the storage device on the base.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A method of manufacturing a semiconductor device, including: forming a plurality of gate strips, each gate strip is a gate terminal of a transistor; forming a plurality of first contact vias connected to a part of the gate strips; forming a plurality of first metal strips above the plurality of gate strips; connecting one of the first metal strips to one of the first contact vias; forming a plurality of second metal strips above the plurality of first metal strips, wherein the plurality of second metal strips are co-planar, each second metal strip and one of the first metal strips are crisscrossed from top view; a length between two adjacent gate strips is twice as a length between two adjacent second metal strips, and a length of said one of the first metal strips is smaller than two and a half times as the length between two adjacent gate strips.

Abstract: A server includes a chassis and a storage module. The storage module is disposed in the chassis. The storage module includes a base, a first electrical connector, a storage device, a connecting member and a first fixing member. A first side of the base has a first fixing portion. The first electrical connector is disposed at a second side of the base, wherein the second side is opposite to the first side. The storage device has a second electrical connector. The connecting member is connected to the storage device. The first fixing member is disposed on the connecting member. The second electrical connector is connected to the first electrical connector and the first fixing member is fixed to the first fixing portion, so as to fix the storage device on the base.

Abstract: The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.

Abstract: The light emitting device includes a growth substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the growth substrate from top to bottom. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars.

Abstract: A system for controlling an information handling system is disclosed that includes a central processing unit, a memory device, a power supply and a memory speed controller configured to determine one or more system parameters of the central processing unit, the memory device and the power supply, to store a boot setting as a function of the one or more system parameters and to cause a system reboot after storing the boot setting.

Abstract: An electronic device includes a first body, a pivot assembly and a second body. The first body includes a first side and a second side, and the second side includes a groove. The pivot assembly includes a container, a first gear, a second gear and a third gear. The container includes an accommodating space and a side wall. The first gear is disposed in the accommodating space and connected to the groove. The second gear is disposed in the accommodating space, pivotally disposed at the side wall and engaged with the first gear. The third gear is disposed in the accommodating space, pivotally disposed at the side wall and engaged with the second gear. The second body is pivotally disposed at the container and connected to the third gear.

Abstract: The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.

Abstract: Clickpad structures may be attached to surfaces of an information handling system using material stacks comprising an elastic material, such as a sponge, which can preload a force on the clickpad surface. The preloaded force reduces a gap between the clickpad switch and contact point, which reduces instability, rattling, and other negative experiences with the clickpad surface experienced by a user. According to an embodiment, an input device for an information handling system includes a clickpad surface having a first side configured to receive user input and a second side opposite the first side; a first coupling stack comprising a first elastic material with a first thickness; and a second coupling stack comprising a second elastic material with a second thickness, wherein each of the coupling stacks is attached to the clickpad surface and a surface of the information handling system by adhesives.

Abstract: The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are different.

Abstract: A system for controlling an information handling system is disclosed that includes a central processing unit, a memory device, a power supply and a memory speed controller configured to determine one or more system parameters of the central processing unit, the memory device and the power supply, to store a boot setting as a function of the one or more system parameters and to cause a system reboot after storing the boot setting.