Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

Abstract: A method of manufacturing a package structure includes: forming a backside RDL structure on a carrier; forming TIVs on the backside RDL structure; mounting at least one passive device on the backside RDL structure, so that the at least one passive device is disposed between the TIVs; placing a die on the at least one passive device, so that the at least one passive device is vertically sandwiched between the die and the backside RDL structure; forming an encapsulant laterally encapsulating the die, the TIVs, and the at least one passive device; forming a front side RDL structure on a front side of the die, the TIVs, and the encapsulant; releasing the backside RDL structure from the carrier; and mounting a package on the backside RDL structure, wherein the package is electrically connected to the at least one passive device by conductive connectors and solders.

Abstract: A method of manufacturing a package structure includes: forming a backside RDL structure on a carrier; forming TIVs on the backside RDL structure; mounting at least one passive device on the backside RDL structure, so that the at least one passive device is disposed between the TIVs; placing a die on the at least one passive device, so that the at least one passive device is vertically sandwiched between the die and the backside RDL structure; forming an encapsulant laterally encapsulating the die, the TIVs, and the at least one passive device; forming a front side RDL structure on a front side of the die, the TIVs, and the encapsulant; releasing the backside RDL structure from the carrier; and mounting a package on the backside RDL structure, wherein the package is electrically connected to the at least one passive device by conductive connectors and solders.

Abstract: A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.

Abstract: Provided are a package structure and a method of manufacturing the same. The package structure includes a die, a first passive device, a plurality of through insulator vias (TIVs), an encapsulant, and a plurality of conductive connectors. The die has a front side and a backside opposite to each other. The first passive device is disposed aside the die. The TIVs are disposed between the die and the first passive device. The encapsulant laterally encapsulates the TIVs, the first passive device, and the die. The conductive connectors are disposed on the backside of the die, wherein the conductive connectors are electrically connected to the die and the first passive device by a plurality of solders.

Abstract: A passive device module includes a first tier, a second tier and connective terminals. The first tier includes a first semiconductor chip and a first encapsulant. The first semiconductor chip has contact posts. The encapsulant encapsulates the first semiconductor chip. The second tier is disposed on the first tier, and includes a second semiconductor chip, through interlayer walls, and a second encapsulant. The through interlayer walls are locate beside and face sidewalls of the second semiconductor chip and are electrically connected to the contact posts. The second encapsulant encapsulates the second semiconductor chip and the through interlayer walls. The connective terminals are disposed over the second tier and are electrically connected to the first semiconductor chip via the through interlayer walls. The first and second semiconductor chips include passive devices.

Abstract: A semiconductor package includes a redistribution structure, a memory wafer, semiconductor dies and conductive vias. The memory wafer, disposed over the redistribution structure, includes at least one memory die. The semiconductor dies are disposed side by side with respect to each other, between the memory wafer and the redistribution structure, and are electrically connected to the redistribution structure. The conductive vias electrically connect the at least one memory die with the redistribution structure. A semiconductor package includes a redistribution structure, a reconstructed wafer, and a heat sink. The reconstructed wafer is disposed on the redistribution structure. The reconstructed wafer includes logic dies and memory dies. The logic dies are electrically connected to the redistribution structure. The memory dies are electrically connected to the redistribution structure and vertically stacked with the logic dies. The heat sink is disposed on the reconstructed wafer.

Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

Abstract: A passive device module includes a first tier, a second tier and connective terminals. The first tier includes a first semiconductor chip and a first encapsulant. The first semiconductor chip has contact posts. The encapsulant encapsulates the first semiconductor chip. The second tier is disposed on the first tier, and includes a second semiconductor chip, through interlayer walls, and a second encapsulant. The through interlayer walls are locate beside and face sidewalls of the second semiconductor chip and are electrically connected to the contact posts. The second encapsulant encapsulates the second semiconductor chip and the through interlayer walls. The connective terminals are disposed over the second tier and are electrically connected to the first semiconductor chip via the through interlayer walls. The first and second semiconductor chips include passive devices.

Abstract: A semiconductor package includes dies, a redistribution structure, a conductive structure and connectors. The conductive plate is electrically connected to contact pads of at least two dies and is disposed on redistribution structure. The conductive structure includes a conductive plate and a solder cover, and the conductive structure extend over the at least two dies. The connectors are disposed on the redistribution structure, and at least one connector includes a conductive pillar. The conductive plate is at same level height as conductive pillar. The vertical projection of the conductive plate falls on spans of the at least two dies.

Abstract: A semiconductor package includes a redistribution structure, a memory wafer, semiconductor dies and conductive vias. The memory wafer, disposed over the redistribution structure, includes at least one memory die. The semiconductor dies are disposed side by side with respect to each other, between the memory wafer and the redistribution structure, and are electrically connected to the redistribution structure. The conductive vias electrically connect the at least one memory die with the redistribution structure. A semiconductor package includes a redistribution structure, a reconstructed wafer, and a heat sink. The reconstructed wafer is disposed on the redistribution structure. The reconstructed wafer includes logic dies and memory dies. The logic dies are electrically connected to the redistribution structure. The memory dies are electrically connected to the redistribution structure and vertically stacked with the logic dies. The heat sink is disposed on the reconstructed wafer.

Abstract: A semiconductor package includes dies, a redistribution structure, a conductive structure and connectors. The conductive plate is electrically connected to contact pads of at least two dies and is disposed on redistribution structure. The conductive structure includes a conductive plate and a solder cover, and the conductive structure extend over the at least two dies. The connectors are disposed on the redistribution structure, and at least one connector includes a conductive pillar. The conductive plate is at same level height as conductive pillar. The vertical projection of the conductive plate falls on spans of the at least two dies.

Abstract: Provided are a package structure and a method of manufacturing the same. The package structure includes a die, a first passive device, a plurality of through insulator vias (TIVs), an encapsulant, and a plurality of conductive connectors. The die has a front side and a backside opposite to each other. The first passive device is disposed aside the die. The TIVs are disposed between the die and the first passive device. The encapsulant laterally encapsulates the TIVs, the first passive device, and the die. The conductive connectors are disposed on the backside of the die, wherein the conductive connectors are electrically connected to the die and the first passive device by a plurality of solders.

Abstract: Provided are a package structure and a method of manufacturing the same. The package structure includes a die, a passive device, and a package. The die has a front side and a backside opposite to each other. The package is disposed on the backside of the die. The passive device is disposed between the backside of the die and the package.

Abstract: A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.

Abstract: A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.

Abstract: Provided are a package structure and a method of manufacturing the same. The package structure includes a die, a passive device, and a package. The die has a front side and a backside opposite to each other. The package is disposed on the backside of the die. The passive device is disposed between the backside of the die and the package.

Abstract: A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.

Abstract: A method includes embedding a die in a molding material; forming a first dielectric layer over the molding material and the die; forming a conductive line over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the conductive line. The method further includes forming a first trench opening extending through the first dielectric layer or the second dielectric layer, where a longitudinal axis of the first trench is parallel with a longitudinal axis of the conductive line, and where no electrically conductive feature is exposed at a bottom of the first trench opening; and filling the first trench opening with an electrically conductive material to form a first ground trench.

Abstract: A flexible flat cable structure capable of improving crosstalk interference includes plural telecommunication signal conductors separated from one another and provided for transmitting differential signals, two support members installed on two lateral sides of the telecommunication signal conductor respectively, at least one filled material disposed between the telecommunication signal conductors. The ratio of the equivalent dielectric constant of the filled material to the equivalent dielectric constant of the support members falls within a range of 0.39˜0.27, and the ratio of the thickness of the filled material to the thickness of the support members falls within a range of 1.49˜1.37.