Abstract: A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Abstract: A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Abstract: A light emitting diode includes an n-type confinement layer, a quantum well active layer formed on the n-type confinement layer, a p-type confinement layer formed on the quantum well active layer, a gallium phosphide-based quantum dot structure formed in the p-type confinement layer, and a GaP-based current spreading layer formed on the GaP-based quantum dot structure. A method of manufacturing the light emitting diode is also provided.

Abstract: A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate.

Abstract: A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate.