Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract: An illumination system that includes a light source device and an algorithm unit is provided. The algorithm unit is coupled to the light source device and outputs a control signal to the light source device according to a reflection spectrum of an object, a visual color matching function, a visual preference correction function, or a combination of the above. The light source device outputs an illumination beam according to the control signal, so as to develop target visual perception of the object while the object is being irradiated by the illumination beam. A method for developing target visual perception of an object is also provided.

Abstract: Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.

Abstract: A light-emitting diode package structure including a chip carrier portion, a light-emitting diode chip, and a package material is provided. The light-emitting diode chip is disposed on the chip carrier portion of the package. The package material is filled in the chip carrier portion and covers the light-emitting diode chip. The package material includes a matrix material, a plurality of first powder particles, and a plurality of second powder particles. The first powder particles and the second powder particles are distributed in the matrix material. Each first powder particle is a wavelength conversion material. Each second powder particle has a shell-like structure.

Abstract: An light device, includes a plurality of first light cells arranged axisymmetrically about an axis; a plurality of second light cells arranged axisymmetrically around the axis; and a controller coupled to a brightness adjust unit, and determines whether to activate the first light cells and second light cells according to a brightness adjust value of the brightness adjust unit, wherein the average distance between the first light cells and the axis is shorter than the average distance between the second light cells and the axis.

Abstract: A light source apparatus including a light-emitting module and a control unit is provided. The light-emitting module is configured to provide a light. The control unit makes the light emitted from the light-emitting module switched between a first light and a second light. A spectrum of the first light is different from a spectrum of the second light, and color temperatures of the first light and the second light are substantially the same as each other.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.

Abstract: Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.

Abstract: A light-emitting diode package structure including a chip carrier portion, a light-emitting diode chip, and a package material is provided. The light-emitting diode chip is disposed on the chip carrier portion of the package. The package material is filled in the chip carrier portion and covers the light-emitting diode chip. The package material includes a matrix material, a plurality of first powder particles, and a plurality of second powder particles. The first powder particles and the second powder particles are distributed in the matrix material. Each first powder particle is a wavelength conversion material. Each second powder particle has a shell-like structure.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract: An light device, includes a plurality of first light cells arranged axisymmetrically about an axis; a plurality of second light cells arranged axisymmetrically around the axis; and a controller coupled to a brightness adjust unit, and determines whether to activate the first light cells and second light cells according to a brightness adjust value of the brightness adjust unit, wherein the average distance between the first light cells and the axis is shorter than the average distance between the second light cells and the axis.

Abstract: An LED base structure with an embedded capacitor includes a body, at least one pair of metal layers, at least one dielectric layer, and at least two conductive channels. The body is an insulating base. The metal layers are disposed in the body, and the dielectric layer is disposed between the metal layers, so as to form an embedded capacitor. The conductive channels are electrically connected to the metal layers, respectively. The LED base structure is further electrically connected to a resistor for forming a resistor-capacitor delay circuit whereby a phase delay is effectuated whenever AC power is supplied to the LED base structure, so as to control the time for switching on one of two parallel-connected LEDs and, as a result, prevent the LEDs from flashing which might otherwise arise when the LEDs are supplied with AC power.

Abstract: An LED bulb structure having an insertion end includes a first electrically conducting pin, a second electrically conducting pin having a die pad at an end thereof, and an LED unit electrically connected to the first electrically conducting pin and the second electrically conducting pin through a first leading wire and a second leading wire, respectively, and a cap enclosing the above-mentioned components and leaving part of the first electrically conducting pin and the second electrically conducting pin exposed thereoutside. The first and second electrically conducting pins are adapted to form bayonet connections. An LED bulb structure having a heat dissipation element has the heat dissipation element attached to the pin portions of the electrically conducting pins. An LED bulb structure having a heat-and-electricity separated element further has a thermally conducting pin.

Abstract: The present invention relates to an alternating current (AC) light emitting diode (LED) structure with overload protection, which comprises an AC LED, a heat dissipating unit and an overload protecting unit. The AC LED is thermally connected with the heat dissipating unit, and the overload protecting unit is connected in series between the AC LED and a power source. Thus, when an overload current is inputted to the AC LED structure, the temperature of the overload protecting unit will rise to disconnect the AC LED from the power source. In this way, an open-circuit status can be produced timely in the AC LED structure to block the power input into the AC LED for purpose of protection against overload.

Abstract: A multi-field arranging method of LED chips under a single lens includes the steps of: setting a first concentric circle on a bottom of a hemispherical lens, wherein the first concentric circle is centered at an axis of the hemispherical lens; and equidistantly arranging at least one first color chip, at least one second color chip and at least one third color chip on the first concentric circle in sequence. The present invention allows the color chips to present symmetrical light patterns through the hemispherical lens, thereby obtaining a light field with evener color mixture.

Abstract: An LED base structure with an embedded capacitor includes a body, at least one pair of metal layers, at least one dielectric layer, and at least two conductive channels. The body is an insulating base. The metal layers are disposed in the body, and the dielectric layer is disposed between the metal layers, so as to form an embedded capacitor. The conductive channels are electrically connected to the metal layers, respectively. The LED base structure is further electrically connected to a resistor for forming a resistor-capacitor delay circuit whereby a phase delay is effectuated whenever AC power is supplied to the LED base structure, so as to control the time for switching on one of two parallel-connected LEDs and, as a result, prevent the LEDs from flashing which might otherwise arise when the LEDs are supplied with AC power.

Abstract: An AC LED structure includes an insulating substrate, an LED set, a first metal layer and a second metal layer. The LED set has a first light-emitting diode and a second light-emitting diode, which are deposited on the insulating substrate and insulated from each other. The first metal layer and the second metal layer commonly have a first profile and serve to electrically connect the first light-emitting diode and the second light-emitting diode in an inverse parallel connection. In virtue of the first metal layer and the second metal layer of the first profile deposited on the first light-emitting diode and the second light-emitting diode, the LED set is allowed to be connected in series or in parallel with another LED set according to practical needs, so as to be able to endure high current density or high voltage operation.

Abstract: An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

Abstract: A parallel bridge circuit structure and a high-voltage parallel bridge circuit structure are disclosed. The parallel bridge circuit structure includes a first bridge circuit and a second bridge circuit. The first bridge circuit includes a plurality of first diodes, and the second bridge circuit includes a plurality of second diodes. Each of the second diodes is exclusively connected to one of the first diodes in parallel. With the design of the parallel connection between the first bridge circuit and the second bridge circuit, break of the entire circuit caused by a damaged diode is prevented. Moreover, with the aid of the AC signal phase delay circuit structure, the output voltage of the parallel bridge circuit structure can be stable and continuous voltage, while the high-voltage parallel bridge circuit structure includes a plurality of parallel bridge circuit structures so as to endure a high voltage input.