Abstract: A light emitting diode package structure includes an encapsulation case, a phosphor layer, a substrate, and a light emitting diode chip. The encapsulation case has an accommodating space. The phosphor layer is coated on a side of the encapsulation case. The substrate is disposed in the accommodating space. The light emitting diode chip is disposed on a first surface of the substrate. A surface of the light emitting diode chip is devoid of being directly covered by a colloid, and the light emitting diode chip and the package housing are separated from each other by a distance.

Abstract: A light Engine device includes a base, a light source module, a light reflecting element, an optical module and a sleeve. The light source module has a light-emitting diode unit and a substrate. The light reflecting element has a first opening, a cup body and a second opening. The optical module has an interface portion and a lens portion. The sleeve has a first port, a sleeve body and a second port. The light emitting diode unit generates a light beam, and the emitted light pattern and light intensity are regulated by the first optical effect and second optical effect.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.