Abstract: A method for tuning a plurality of image signal processor (ISP) parameters of a camera includes performing a first iteration. The first iteration includes extracting image features from an initial image, arranging a tuning order of the plurality of ISP parameters of the camera according to at least the plurality of ISP parameters and the image features, tuning a first set of the ISP parameters according to the tuning order to generate a first tuned set of the ISP parameters, and replacing the first set of the ISP parameters with the first tuned set of the ISP parameters in the plurality of ISP parameters to generate a plurality of updated ISP parameters.

Abstract: An electronic device includes a substrate, a transistor, and a ring resonator. The transistor is over the substrate. The ring resonator is over the substrate and overlaps with the transistor. The ring resonator includes a conductive loop and an impedance matching element. The conductive loop includes a loop portion having two first parts and a second part and two feeding lines. Each of the first parts of the loop portion is between the second part of the loop portion and one of the feeding lines, and a tunnel barrier of the transistor is closer to the second part than to the feeding lines. The impedance matching element is closer to the feeding lines than to the second part.

Abstract: A method of fabricating a semiconductor device is described. A substrate is provided. Multiple fins are formed extending from the substrate, the fins including a first group of active fins in an active region and an inactive fin having at least a portion in an inactive region, the active fins separated by first trench regions, the inactive fin separated from its closest active fin by a second trench region, and the second trench region having a greater width than that of a trench region of the first trench regions. A dummy fin is formed on the isolation dielectric in the second trench region, the dummy fin disposed between the first group of active fins and the inactive fin. A dummy gate is formed over the fins. The gate isolation structure is disposed between the dummy fin and the inactive fin and separates regions of the dummy gate.

Abstract: A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.

Abstract: Vias, along with methods for fabricating vias, are disclosed that exhibit reduced capacitance and resistance. An exemplary interconnect structure includes a first source/drain contact and a second source/drain contact disposed in a dielectric layer. The first source/drain contact physically contacts a first source/drain feature and the second source/drain contact physically contacts a second source/drain feature. A first via having a first via layer configuration, a second via having a second via layer configuration, and a third via having a third via layer configuration are disposed in the dielectric layer. The first via and the second via extend into and physically contact the first source/drain contact and the second source/drain contact, respectively. A first thickness of the first via and a second thickness of the second via are the same. The third via physically contacts a gate structure, which is disposed between the first source/drain contact and the second source/drain contact.

Abstract: The present application is to provide a system for sensing and responding to a lateral blind spot of a mobile carrier and method thereof, which is applied for a mobile carrier during moving to a parking place. Firstly, a light scan unit and a depth image capture unit are used to scan a plurality of surrounding objects and capture a plurality of object depth images of the surrounding objects, and then a plurality of screened images are obtained according to a moving route of the mobile carrier for further obtaining correspondingly a plurality of forecasted lines to generate corresponded notice message for noting driver or ADAS. Due to the objects corresponding to the screened images and located on a blind position which is at one side of the mobile carrier, the notice message provides the driver preventing from the ignored danger by ignoring the blind position.

Abstract: Among other things, a determination is made that intervention in an operation of one or more autonomous driving capabilities of a vehicle is appropriate. Based on the determination, a person is enabled to provide information for an intervention. The intervention is caused in the operation of the one or more autonomous driving capabilities of the vehicle.

Abstract: A method includes forming a first fin and a second fin over a substrate. The method includes forming a first dummy gate structure that straddles the first fin and the second fin. The first dummy gate structure includes a first dummy gate dielectric and a first dummy gate disposed over the first dummy gate dielectric. The method includes replacing a portion of the first dummy gate with a gate isolation structure. The portion of the first dummy gate is disposed over the second fin. The method includes removing the first dummy gate. The method includes removing a first portion of the first dummy gate dielectric around the first fin, while leaving a second portion of the first dummy gate dielectric around the second fin intact. The method includes forming a gate feature straddling the first fin and the second fin, wherein the gate isolation structure intersects the gate feature.

Abstract: An apparatus for ion beam etching is provided. An ion extractor separates a plasma source chamber from a process chamber. A gas inlet provides gas to the plasma source chamber. An RF power system provides RF power to the plasma source chamber. A process gas source and cleaning gas mixture source are connected to the gas inlet.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a dielectric fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric fin. The semiconductor device includes a gate structure extending along a second direction perpendicular to the first direction. The gate structure includes a first portion and a second portion separated by the gate isolation structure and the dielectric fin. The first portion of the gate structure presents a first beak profile and the second portion of the gate structure presents a second beak profile. The first and second beak profiles point toward each other.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: Among other things, a determination is made that intervention in an operation of one or more autonomous driving capabilities of a vehicle is appropriate. Based on the determination, a person is enabled to provide information for an intervention. The intervention is caused in the operation of the one or more autonomous driving capabilities of the vehicle.

Abstract: A semiconductor device and method of fabricating a semiconductor device involves formation of a trench above a fin (e.g. a fin of a FinFET device) of the semiconductor device and formation of a multi-layer dielectric structure within the trench. The profile of the multi-layer dielectric structure can be controlled depending on the application to reduce shadowing effects and reduce cut failure risk, among other possible benefits. The multi-layer dielectric structure can include two layers, three layers, or any number of layers and can have a stepped profile, a linear profile, or any other type of profile.

Abstract: A method includes forming a first fin and a second fin over a substrate. The method includes forming a first dummy gate structure that straddles the first fin and the second fin. The first dummy gate structure includes a first dummy gate dielectric and a first dummy gate disposed over the first dummy gate dielectric. The method includes replacing a portion of the first dummy gate with a gate isolation structure. The portion of the first dummy gate is disposed over the second fin. The method includes removing the first dummy gate. The method includes removing a first portion of the first dummy gate dielectric around the first fin, while leaving a second portion of the first dummy gate dielectric around the second fin intact. The method includes forming a gate feature straddling the first fin and the second fin, wherein the gate isolation structure intersects the gate feature.

Abstract: A moiré pattern imaging device includes a light-transmitting film and an optical sensor. The light-transmitting film includes a plurality of microlenses, and a light-incident surface and a light-exit surface opposite to each other. The plurality of microlenses are disposed on the light-incident surface, the light-exit surface or a combination thereof, and the plurality of microlenses are arranged in two dimensions to form a microlens array. The optical sensor includes a photosurface. The photosurface faces the light-exit surface of the light-transmitting film, the photosurface is provided with a plurality of pixels, and the plurality of pixels are arranged in two dimensions to form a pixel array. The microlens array and the pixel array correspondingly form a moiré pattern effect to produce an imaging magnification effect, and the photosurface of the optical sensor senses light and forms a moiré pattern magnification image.

Abstract: A thin proximity sensing device includes a transparent plate and a light sensor. The transparent plate includes a first surface and a second surface. The first surface is provided with a light source and a light entering area. The light source is arranged on the first surface. The second surface is provided with a reflector. The light sensor includes a light receiving area. The light sensor is arranged on the transparent plate. The reflector is capable of correspondingly reflecting specific incident light. The specific incident light refers to light that enters the transparent plate through the light entering area on the first surface after the light emitted by the light source is reflected externally, and is incident to the reflector. After reflected by the reflector, the specific incident light is reflected one or more times within the thickness of the transparent plate and is transmitted to the light sensor.

Abstract: A moiré pattern imaging device includes a light-transmitting film and an optical sensor. The light-transmitting film includes a plurality of microlenses, and a light-incident surface and a light-exit surface opposite to each other. The plurality of microlenses are disposed on the light-incident surface, the light-exit surface or a combination thereof, and the plurality of microlenses are arranged in two dimensions to form a microlens array. The optical sensor includes a photosurface. The photosurface faces the light-exit surface of the light-transmitting film, the photosurface is provided with a plurality of pixels, and the plurality of pixels are arranged in two dimensions to form a pixel array. The microlens array and the pixel array correspondingly form a moiré pattern effect to produce an imaging magnification effect, and the photosurface of the optical sensor senses light and forms a moiré pattern magnification image.

Abstract: A thin proximity sensing device includes a transparent plate and a light sensor. The transparent plate includes a first surface and a second surface. The first surface is provided with a light source and a light entering area. The light source is arranged on the first surface. The second surface is provided with a reflector. The light sensor includes a light receiving area. The light sensor is arranged on the transparent plate. The reflector is capable of correspondingly reflecting specific incident light. The specific incident light refers to light that enters the transparent plate through the light entering area on the first surface after the light emitted by the light source is reflected externally, and is incident to the reflector. After reflected by the reflector, the specific incident light is reflected one or more times within the thickness of the transparent plate and is transmitted to the light sensor.

Abstract: An air-charging unmanned aerial vehicle set is provided, including a charging unmanned aerial vehicle and a functional unmanned aerial vehicle. The charging unmanned aerial vehicle includes a first unmanned aerial vehicle body, a plurality of first propeller units, a rotation stage, a first battery slot and a second battery slot. The first propeller units are disposed on the first unmanned aerial vehicle body. The rotation stage is disposed on the first unmanned aerial vehicle body. The first battery slot and the second battery slot are disposed on the rotation stage. The functional unmanned aerial vehicle includes a second unmanned aerial vehicle body, a plurality of second propeller units, a third battery slot and a battery cover. The second propeller units, the third battery slot and the battery cover are disposed on the second unmanned aerial vehicle body.

Abstract: An air-charging unmanned aerial vehicle set is provided, including a charging unmanned aerial vehicle and a functional unmanned aerial vehicle. The charging unmanned aerial vehicle includes a first unmanned aerial vehicle body, a plurality of first propeller units, a rotation stage, a first battery slot and a second battery slot. The first propeller units are disposed on the first unmanned aerial vehicle body. The rotation stage is disposed on the first unmanned aerial vehicle body. The first battery slot and the second battery slot are disposed on the rotation stage. The functional unmanned aerial vehicle includes a second unmanned aerial vehicle body, a plurality of second propeller units, a third battery slot and a battery cover. The second propeller units, the third battery slot and the battery cover are disposed on the second unmanned aerial vehicle body.