Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.

Abstract: A method includes forming a first conductive feature on a substrate, forming a via that contacts the first conductive feature, the via comprising a conductive material, performing a Chemical Mechanical Polishing (CMP) process to a top surface of the via, depositing an Interlayer Dielectric (ILD) layer on the via, forming a trench within the ILD layer to expose the via, and filling the trench with a second conductive feature that contacts the via, the second conductive feature comprising a same material as the conductive material.

Abstract: A method of fabricating a semiconductor device is described. A substrate is provided. A plurality of fins is formed extending from the substrate, the fins including a first group of active fins arranged in an active region, and including an inactive fin having at least a portion in an inactive region, the active fins separated by first trench regions between adjacent of the active regions, the inactive fin separated from its closest active fin by a second trench region, the second trench region having a greater width than that of a trench region of the first trench regions. A dummy fin is formed on the isolation dielectric in the second trench region, the dummy fin disposed between the first group of active fins and the inactive fin. A dummy gate is formed over the fins. The gate isolation structure is disposed between the dummy fin and the inactive fin and separates regions of the dummy gate.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.

Abstract: A memory device includes a plurality of circuit layers, a plurality of first conductive through via structures and a plurality of bitlines. The circuit layers are disposed one above another, and each circuit layer includes one or more memory cell arrays. The first conductive through via structures penetrates though the circuit layers. Each of the bitlines includes a plurality of bitline segments disposed on the circuit layers respectively. The bitline segments are electrically connected through one of the first conductive through via structures. Each bitline segment is coupled to a plurality of memory cells of a memory cell array of a circuit layer where the bitline segment is disposed.

Abstract: SRAM designs based on GAA transistors are disclosed that provide flexibility for increasing channel widths of transistors at scaled IC technology nodes and relax limits on SRAM performance optimization imposed by FinFET-based SRAMs. GAA-based SRAM cells described have active region layouts with active regions shared by pull-down GAA transistors and pass-gate GAA transistors. A width of shared active regions that correspond with the pull-down GAA transistors are enlarged with respect to widths of the shared active regions that correspond with the pass-gate GAA transistors. A ratio of the widths is tuned to obtain ratios of pull-down transistor effective channel width to pass-gate effective channel width greater than 1, increase an on-current of pull-down GAA transistors relative to an on-current of pass-gate GAA transistors, decrease a threshold voltage of pull-down GAA transistors relative to a threshold voltage of pass-gate GAA transistors, and/or increases a ? ratio of an SRAM cell.

Abstract: A semiconductor fabrication method includes: forming an epitaxial stack including at least one sacrificial epitaxial layer and at least one channel epitaxial layer; forming a plurality of fins in the epitaxial stack; performing tuning operations to prevent a width of the sacrificial epitaxial layer expanding beyond a width of the channel epitaxial layer during operations to form isolation features; forming the isolation features between the plurality of fins, wherein the width of the sacrificial epitaxial layer does not expand beyond the width of the channel epitaxial layer; forming a sacrificial gate stack; forming gate sidewall spacers on sidewalls of the sacrificial gate stack; forming inner spacers around the sacrificial epitaxial layer and the channel epitaxial layer; forming source/drain features; removing the sacrificial gate stack and sacrificial epitaxial layer; and forming a replacement metal gate, wherein the metal gate is shielded from the source/drain features.

Abstract: An electronic device and a battery power displaying method of the electronic device are provided. The method includes following steps. Estimated power of a battery module in the electronic device is obtained. A slope parameter is adjusted according to a charging and discharging state of the electronic device and the estimated power. The estimated power is converted into mapping power based on the slope parameter. The mapping power is disposed on a user interface.

Abstract: A method is provided for processing wastewater having organics even together with high-concentration ammonia-nitrogen, using an apparatus, comprising a catalyzation tank and a subsequent neutralization tank. Organic ammonia-nitrogen wastewater is introduced into tank for reaction without being pre-adjusted by acidic agent or mixing with other additives. A persulfate oxidant is used to process high-efficiency oxidative degradation for ammonia-nitrogen and toxic organics in wastewater through catalyzing oxidation of ultraviolet activation, tiny-amount-transition-metal catalyzation, or both of them, for simultaneous reductions or complete removals of ammonia-nitrogen and organic carbon contents. After neutralization according to actual needs, the final output is complied with biological treatment conditions, discharged-water quality standards, or recycled-water standards.

Abstract: A moiré pattern imaging device includes a light-transmitting film and an optical sensor. The light-transmitting film includes a plurality of microlenses, and a light-incident surface and a light-exit surface opposite to each other. The plurality of microlenses are disposed on the light-incident surface, the light-exit surface or a combination thereof, and the plurality of microlenses are arranged in two dimensions to form a microlens array. The optical sensor includes a photosurface. The photosurface faces the light-exit surface of the light-transmitting film, the photosurface is provided with a plurality of pixels, and the plurality of pixels are arranged in two dimensions to form a pixel array. The microlens array and the pixel array correspondingly form a moiré pattern effect to produce an imaging magnification effect, and the photosurface of the optical sensor senses light and forms a moiré pattern magnification image.

Abstract: A thin proximity sensing device includes a transparent plate and a light sensor. The transparent plate includes a first surface and a second surface. The first surface is provided with a light source and a light entering area. The light source is arranged on the first surface. The second surface is provided with a reflector. The light sensor includes a light receiving area. The light sensor is arranged on the transparent plate. The reflector is capable of correspondingly reflecting specific incident light. The specific incident light refers to light that enters the transparent plate through the light entering area on the first surface after the light emitted by the light source is reflected externally, and is incident to the reflector. After reflected by the reflector, the specific incident light is reflected one or more times within the thickness of the transparent plate and is transmitted to the light sensor.

Abstract: A moiré pattern imaging device includes a light-transmitting film and an optical sensor. The light-transmitting film includes a plurality of microlenses, and a light-incident surface and a light-exit surface opposite to each other. The plurality of microlenses are disposed on the light-incident surface, the light-exit surface or a combination thereof, and the plurality of microlenses are arranged in two dimensions to form a microlens array. The optical sensor includes a photosurface. The photosurface faces the light-exit surface of the light-transmitting film, the photosurface is provided with a plurality of pixels, and the plurality of pixels are arranged in two dimensions to form a pixel array. The microlens array and the pixel array correspondingly form a moiré pattern effect to produce an imaging magnification effect, and the photosurface of the optical sensor senses light and forms a moiré pattern magnification image.

Abstract: A thin proximity sensing device includes a transparent plate and a light sensor. The transparent plate includes a first surface and a second surface. The first surface is provided with a light source and a light entering area. The light source is arranged on the first surface. The second surface is provided with a reflector. The light sensor includes a light receiving area. The light sensor is arranged on the transparent plate. The reflector is capable of correspondingly reflecting specific incident light. The specific incident light refers to light that enters the transparent plate through the light entering area on the first surface after the light emitted by the light source is reflected externally, and is incident to the reflector. After reflected by the reflector, the specific incident light is reflected one or more times within the thickness of the transparent plate and is transmitted to the light sensor.

Abstract: An air-charging unmanned aerial vehicle set is provided, including a charging unmanned aerial vehicle and a functional unmanned aerial vehicle. The charging unmanned aerial vehicle includes a first unmanned aerial vehicle body, a plurality of first propeller units, a rotation stage, a first battery slot and a second battery slot. The first propeller units are disposed on the first unmanned aerial vehicle body. The rotation stage is disposed on the first unmanned aerial vehicle body. The first battery slot and the second battery slot are disposed on the rotation stage. The functional unmanned aerial vehicle includes a second unmanned aerial vehicle body, a plurality of second propeller units, a third battery slot and a battery cover. The second propeller units, the third battery slot and the battery cover are disposed on the second unmanned aerial vehicle body.

Abstract: An air-charging unmanned aerial vehicle set is provided, including a charging unmanned aerial vehicle and a functional unmanned aerial vehicle. The charging unmanned aerial vehicle includes a first unmanned aerial vehicle body, a plurality of first propeller units, a rotation stage, a first battery slot and a second battery slot. The first propeller units are disposed on the first unmanned aerial vehicle body. The rotation stage is disposed on the first unmanned aerial vehicle body. The first battery slot and the second battery slot are disposed on the rotation stage. The functional unmanned aerial vehicle includes a second unmanned aerial vehicle body, a plurality of second propeller units, a third battery slot and a battery cover. The second propeller units, the third battery slot and the battery cover are disposed on the second unmanned aerial vehicle body.

Abstract: An wide-angle imaging lens module satisfies: 0.84<|f1|/f<2.28; 0.52<f2/f<1.26; 0.49<f3/f<1.12; 0.32<|f4|/f<0.70; FOV>100?; and TTL/ImagH<2.80, where f1 denotes a focal length of a first lens, f2 denotes a focal length of a second lens, f3 denotes a focal length of a third lens, f4 denotes a focal length of a fourth lens, f denotes a total system focal length of the wide-angle imaging lens module, FOV denotes a total system field-of-view angle of the wide-angle imaging lens module, TTL denotes a system length of the wide-angle imaging lens module, and ImagH denotes a maximum image height of the wide-angle imaging lens module.

Abstract: An optical touch device using imaging module according the present invention includes a guide light plate, at least a light source, an imaging module, at least a photosensitive unit and a microprocessor; the imaging module has at least an image reflective curved surface to image multiple contact positions to at least a photosensitive unit conveniently to form image information corresponding to the multiple contact positions so as to allow the microprocessor to generate corresponding touch signals; the images at where an object contacts the guide light plate are utilized directly to generate the touch signals instead of detecting attenuation signal of frustrated total internal reflection resulting from the object contacting the guide light plate; due to the light in the guide light plate is employed to conduct the total internal reflection propagation to attain touch control function, components needed in the touch device is reduced and the fabrication cost is saved largely.

Abstract: An imaging zoom lens system includes a first lens group, a second lens group and a third lens group in sequence along an optical axis of the imaging zoom lens. Through designs of structural relationships among the first to third lens groups and relevant optical parameters, the imaging zoom lens system is able to increase a focusing speed at a telephoto end to approach a focusing speed at a wide angle end.

Abstract: An imaging zoom lens system includes a first lens group, a second lens group and a third lens group in sequence along an optical axis of the imaging zoom lens. Through designs of structural relationships among the first to third lens groups and relevant optical parameters, the imaging zoom lens system is able to increase a focusing speed at a telephoto end to approach a focusing speed at a wide angle end.

Abstract: An imaging zoom lens includes a first lens group, a second lens group and a third lens group in sequence along an optical axis of the imaging zoom lens. With the structural relationship of the first to third lens group and relevant optical parameters, the imaging zoom lens may be as miniaturized as possible while maintaining good optical performance.