Abstract: A vapor phase film deposition apparatus comprises a susceptor where a plurality of substrates is placed thereon; and an opposing face member disposed opposite to the susceptor. The opposing face member includes a plurality of raised portions which protrude toward the susceptor to define at least one flow channel. A reaction gas flows through the flow channel and deposits on the plurality of substrates. At least one of the plurality of raised portions includes a heat insulation structure. The vapor phase film deposition apparatus further comprising a heating element disposed on one side of the susceptor, which is opposite to the opposing face member.

Abstract: A gas injector is used in a film deposition apparatus for semiconductor processes. The gas injector comprises a plurality of gas inlets, a plurality of gas flow channels, and a plurality of gas outlets. The gas inlets introduce several kinds of gases into the gas flow channels. The several kinds of gases are delivered to the gas outlets by the gas flow channels. The cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets.

Abstract: A vapor phase film deposition apparatus comprises a susceptor where a plurality of substrates is placed thereon; and an opposing face member disposed opposite to the susceptor. The opposing face member includes a plurality of raised portions which protrude toward the susceptor to define at least one flow channel. A reaction gas flows through the flow channel and deposits on the plurality of substrates. At least one of the plurality of raised portions includes a heat insulation structure. The vapor phase film deposition apparatus further comprising a heating element disposed on one side of the susceptor, which is opposite to the opposing face member.

Abstract: A chemical vapor deposition apparatus comprises a ballast gas source and a mass flow controller, wherein the ballast gas source is arranged at an upstream side of a separating device, and the pressure in a reaction chamber is controlled by a flow rate of the ballast gas. Since the space between the reaction chamber and the node connected with the ballast gas source is small, a pressure response of the reaction chamber can be speeded up.

Abstract: A chemical vapor deposition apparatus comprises a ballast gas source and a mass flow controller, wherein the ballast gas source is arranged at an upstream side of a separating device, and the pressure in a reaction chamber is controlled by a flow rate of the ballast gas. Since the space between the reaction chamber and the node connected with the ballast gas source is small, a pressure response of the reaction chamber can be speeded up.

Abstract: The invention provides a gas distribution apparatus or injector in a reaction chamber comprising multiple diffusion plates arranged substantially parallel and at least one bump with slopes and substantially flat top/bottom surface to introduce at least two different reaction gases horizontally and separately into the reaction chamber while preventing condensation of adduct formed due to mixture of the reaction gases at a low temperature by avoiding back diffusion. Meanwhile any turbulence or vortex of the reaction gases is not caused because slope shape is formed at the bump.

Abstract: A gas injector is used in a film deposition apparatus for semiconductor processes. The gas injector comprises a plurality of gas inlets, a plurality of gas flow channels, and a plurality of gas outlets. The gas inlets introduce several kinds of gases into the gas flow channels. The several kinds of gases are delivered to the gas outlets by the gas flow channels. The cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets.

Abstract: A wafer holder includes a holder main body, a supporting member, and a limiting member. The holder main body has a through hole region. The supporting member has a supporting main body and supporting legs. The supporting main body is disposed on an inner surface of the through hole region, and the supporting legs are attached to an inner surface of the supporting main body and configured to support a wafer. The limiting member is attached to the supporting main body and disposed between two adjacent supporting legs and opposite to a flat side of the wafer.

Abstract: A film-deposition apparatus simultaneously realizes high partial pressure of volatile components, great flow velocity and smooth deposition rate curve at lower gas consumption. The apparatus comprises a disk-like susceptor, a face member opposing the susceptor, an injector, a material gas introduction portion, and a gas exhaust portion. A wafer holder retains a substrate, and a supporting member of the susceptor retains the wafer holder. The susceptor revolves around its central axis and the substrate rotates by itself. The opposing face member is structured so that a fan-shaped recessed portion and a fan-shaped raised portion are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. The apparatus provides film deposition equivalent to that attained under optimal conditions by a conventional apparatus at a smaller flow rate of the carrier gas, and increases a partial pressure of material gases of volatile components.

Abstract: The present invention discloses a low temperature ion implantation by performing a heating process after the end of an implanting process and before the wafer is moved into the external environment. This invention actively raises wafer temperature at a time no later than implementation of the vacuum venting process, such that the condensed moisture induced by the temperature difference between a vacuum environment inside ion implanter and an external environment outside ion implanter is effectively minimized. The wafer can be heated at a loadlock, a robot for transferring wafer and/or an implantation chamber. The wafer can be heated by a gas, a liquid, a light and/or a heater embedded in a holder for holding the wafer.