Patents by Inventor Shiho Arimoto

Shiho Arimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device comprising stack of pn junction diode and schottky barrier diode
    Patent number: 8373246
    Abstract: Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does.
    Type: Grant
    Filed: June 16, 2010
    Date of Patent: February 12, 2013
    Assignees: SANYO Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
    Inventors: Seiji Miyoshi, Tetsuya Okada, Shiho Arimoto
  • SEMICONDUCTOR DEVICE
    Publication number: 20100320557
    Abstract: Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does.
    Type: Application
    Filed: June 16, 2010
    Publication date: December 23, 2010
    Applicants: SANYO Electric Co., Ltd., SANYO Semiconductor Co., Ltd.
    Inventors: Seiji MIYOSHI, Testuya Okada, Shiho Arimoto