Abstract: A magnetic memory includes a magnetic wire, a first insulating layer, first electrodes a second electrode, a current supplying module, and a voltage applying module. The magnetic wire includes a first portion and a second portion, has a first electric resistance value, and is configured to form magnetic domains. The first electrodes are formed on the first insulating layer, arranged along the magnetic wire, and spaced from each other. The second electrode includes a third portion and a fourth portion. The second electrode is electrically connected to the first electrodes between the third portion and the fourth portion and has a second electric resistance value being larger than the first electric resistance value. The current supplying module is configured to supply the magnetic wire with a pulse current. The voltage applying module is configured to apply a voltage that decreases with time.

Abstract: A signal processing device includes a continuous film, a plurality of spin wave generators, and at least one signal detector. The continuous film includes at least one magnetic layer. The plurality of spin wave generators are provided on the continuous film in such a manner as to be in direct contact with the continuous film or be in contact with the continuous film while having an insulation layer interposed therebetween, and each has a contact surface with the continuous film in a dot shape and generates a spin wave in a region of the magnetic layer of the continuous film by receiving an input signal, the region being immediately under the contact surface. The signal detector is provided on the continuous film and detects, as an electrical signal, the spin waves generated by the spin wave generators and propagating through the continuous film.

Abstract: According to an embodiment, an adder includes first and second wave computing units and a threshold wave computing unit. Each of the first and second wave computing units includes a pair of first input sections, a first wave transmission medium having a continuous film including a magnetic body connected to the first input sections, and a first wave detector outputting a result of computation by spin waves induced in the first wave transmission medium by the signals corresponding to the two bit values. The threshold wave computing unit includes a plurality of third input sections, a third wave transmission medium having a continuous film including a magnetic body connected to the third input sections, and a third wave detector a result of computation by spin waves induced in the third wave transmission medium.

Abstract: A magnetic storage element includes a magnetic nanowire. A cross-section of the magnetic nanowire has first and second visible outlines, the first visible outline has a first minimal point at which a distance from a virtual straight line becomes minimal, a second minimal point at which the distance from the virtual straight line becomes minimal, and a first maximal point at which the distance from the virtual straight line becomes longest between the first minimal point and the second minimal point, and an angle between a first straight line connecting the first minimal point and the second minimal point, and one of a second straight line connecting the first minimal point and the first maximal point and a third straight line connecting the second minimal point and the first maximal point is not smaller than four degrees and not larger than 30 degrees.

Abstract: A magnetic memory according to an embodiment includes: a magnetic nanowire; a first electrode and a second electrode provided to different locations of the magnetic nanowire; a third electrode including a magnetic layer, the third electrode being provided to a location of the magnetic nanowire between the first electrode and the second electrode; an intermediate layer provided between the magnetic nanowire and the third electrode, the intermediate layer being in contact with the magnetic nanowire and the third electrode; a fourth electrode of a nonmagnetic material provided onto the magnetic nanowire and being on the opposite side of the magnetic wire from the third electrode; and an insulating layer provided between the magnetic nanowire and the fourth electrode, the insulating layer being in contact with the magnetic nanowire and the fourth electrode.

Abstract: A magnetic memory according to an embodiment includes: a magnetic nanowire; first insulating layers provided on a first surface of the magnetic nanowire, each of the first insulating layers having a first and second end faces, a thickness of the first insulating layer over the first end face being thicker than a thickness of the first insulating layer over the second end face; first electrodes on surfaces of the first insulating layers opposite to the first surface; second insulating layers on the second surface of the magnetic nanowire, each of the second insulating layers having a third and fourth end faces, a thickness of the second insulating layer over the third surface being thicker than a thickness of the second insulating layer over the fourth end face; and second electrodes on surfaces of the second insulating layers.

Abstract: A magnetic memory includes a magnetic wire, a first insulating layer, first electrodes a second electrode, a current supplying module, and a voltage applying module. The magnetic wire includes a first portion and a second portion, has a first electric resistance value, and is configured to form magnetic domains. The first electrodes are formed on the first insulating layer, arranged along the magnetic wire, and spaced from each other. The second electrode includes a third portion and a fourth portion. The second electrode is electrically connected to the first electrodes between the third portion and the fourth portion and has a second electric resistance value being larger than the first electric resistance value. The current supplying module is configured to supply the magnetic wire with a pulse current. The voltage applying module is configured to apply a voltage that decreases with time.

Abstract: An example magnetic recording device includes a magnetic recording section and a magnetization oscillator and a first nonmagnetic layer disposed between the magnetic recording section and the magnetization oscillator. The magnetic recording section includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; and a second nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. The magnetization oscillator includes a third ferromagnetic layer with a variable magnetization direction; a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction; and a third nonmagnetic layer disposed between the third ferromagnetic layer and the fourth ferromagnetic layer.

Abstract: A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.

Abstract: A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.

Abstract: An example magnetic recording device includes a laminated body. The laminated body includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer with a variable magnetization direction; and a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction, wherein at least one of the first and second direction is generally perpendicular to the film plane. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by passing the current in a direction generally perpendicular to the film plane of the layers of the laminated body and the magnetization of the third ferromagnetic layer is able to undergo precession by passing the current.

Abstract: According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.

Abstract: A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer.

Abstract: A magnetic memory according to an embodiment includes: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material.

Abstract: A spin wave device comprises a metal layer, a pinned layer, a nonmagnetic layer, a free layer, an antiferromagnetic layer, a first electrode, a first insulator layer, and a second electrode. The pinned layer has a magnetization whose direction is fixed. The free layer has a magnetization whose direction is variable.

Abstract: A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.

Abstract: A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.

Abstract: A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.

Abstract: A spin wave device according to an embodiment includes: an input interconnect transmitting an input impulse signal; a multilayer film including a foundation layer; a first magnetic layer formed on the multilayer film and generating spin waves when receiving the input impulse signal, the spin waves propagating through the first magnetic layer; a plurality of input electrodes arranged in a straight line on the first magnetic layer, being connected to the input interconnect, and transmitting the input impulse signal to the first magnetic layer; and a plurality of sensing electrodes sensing the spin waves, being arranged on the first magnetic layer, and being located at different distances from one another from the straight line having the input electrodes arranged therein, and the following equation is satisfied: d=Vg×t0.

Abstract: According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/ a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.