Abstract: A novel light-emitting device with high emission efficiency is provided. A light-emitting device with a high blue index (BI) is provided. A light-emitting device with low power consumption is provided. A light-emitting device including a first electrode and a second electrode which are a reflective electrode and a semi-transmissive and semi-reflective electrode, and an EL layer sandwiched between the first electrode and the second electrode, where the EL layer contains an emission center substance, where when the emission center substance in the EL layer includes only one kind of substance, photon energy of a peak wavelength of light emitted from the light-emitting device is designed from an average value of photon energy of light emitted by the emission center substance in a solution state and emission edge energy on a short wavelength side of an emission spectrum of the emission center substance in the solution state.

Abstract: The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semi-transparent film on a light shield pattern with good step coverage.

Abstract: The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semitransparent film on a light shield pattern with good step coverage.

Abstract: The invention provides a mask blank for EUV exposure wherein a substrate is provided at its flank with an electrically conductive film unlikely to peel off in EUV exposure mask fabrication process steps, etc. and its fabrication process, and provide a mask for EUV exposure which is readily attachable to or detachable from an electrostatic chuck, thereby foreclosing the possibility of the mask remaining clinging firmly to the electrostatic chuck after EUV exposure and being hard to detach from it. A mask blank for EUV exposure is provided, in which on one major surface of a substrate, a reflective layer adapted to reflect EUV light and an absorptive layer located on said reflective layer for absorption of said EUV light are at least provided as a pattern-formation layer.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.

Abstract: The main object of the present invention is to provide a method for manufacturing a high precision resist pattern upon use of a chemical amplification-type resist and a conductive film.

Abstract: It is an object of the present invention to provide manufacturing method of a photomask, the method enabling the provision of a resist pattern photomask which is free from the sticking of foreign matter and has high quality. The manufacturing method of a photomask comprises applying a photoresist directly to a substrate and patterning the photoresist to produce a photomask with a resist pattern, the method further comprising a process of attaching a pellicle to the substrate before inspection processs after forming the resist pattern by carrying out a process of applying the resist to the substrate, an exposure/drawing process and a developing process.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may include providing different thermal flux to different regions of the radiation sensitive layer to concurrently create different temperatures in those regions. The different temperatures may cause different physicochemical transformation of the regions that may be used to reduce critical dimension errors in those regions. A post exposure bake hot plate may be configured to provide heterogeneous radiant energy flux to a radiation sensitive layer by providing adjustable spacers that adjust a separation distance between the hot plate and the layer. The adjustable spacers may be adjusted prior to exposure image modification by using an adjustment plate having openings to provide access to and adjustment of the adjustable spacers.

Abstract: A system and method are described for modifying an exposure image in a radiation sensitive layer by treating the exposure image with a heterogeneous and non-uniform post exposure thermal treatment. The treatment may comprise providing different portions of the exposure feature, such as different exposure features or critical dimensions, with different thermal fluxes from a thermal modification system, such as a post exposure bake oven or hot plate configured to provide different thermal fluxes. The thermal modification system may comprise one or more adjustable spacers to adjust a radiant energy flux from a thermal energy source to the radiation sensitive layer by adjusting a separation distance between the source and the layer.