Abstract: A semiconductor memory device according to an embodiment includes a substrate, first members, first conductive layers, and first and second pillars. The substrate includes first and second areas, and block areas. The first conductive layers are split by the first members. The first pillars are provided in an area in which the first area and the block areas overlap. The second pillars are provided in an area in which the second area and the block areas overlap. The second area includes a first sub-area in which the second pillars are periodically arranged in an area that overlaps at least one block area in the block areas. In the first sub-area, at least one second pillar is omitted from the second pillars that are periodically arranged.

Abstract: According to one embodiment, there is provided a semiconductor device including a stacked body, a semiconductor columnar member, an insulating film, and a structure. The stacked body is disposed above a semiconductor substrate. In the stacked body, a conductive film and an insulating layer are alternately disposed in a stacking direction. The semiconductor columnar member penetrates the stacked body in the stacking direction. The insulating film surrounds the semiconductor columnar member and penetrates the stacked body in the stacking direction. The structure is disposed in a peripheral circuit region on the semiconductor substrate. The peripheral circuit region is a region including a plurality of circuit blocks. The structure has a plate-shaped portion extending at least between the plurality of circuit blocks.

Abstract: According to one embodiment, there is provided a semiconductor device including a stacked body, a semiconductor columnar member, an insulating film, and a structure. The stacked body is disposed above a semiconductor substrate. In the stacked body, a conductive film and an insulating layer are alternately disposed in a stacking direction. The semiconductor columnar member penetrates the stacked body in the stacking direction. The insulating film surrounds the semiconductor columnar member and penetrates the stacked body in the stacking direction. The structure is disposed in a peripheral circuit region on the semiconductor substrate. The peripheral circuit region is a region including a plurality of circuit blocks. The structure has a plate-shaped portion extending at least between the plurality of circuit blocks.