Abstract: A method for optimizing a negative tone development photoresist model, which includes: creating a concentration distribution function of acid in the photoresist based on light field distribution in the initial negative tone development photoresist model and acid concentration in photoresist; creating a concentration distribution function of a developing solution based on the concentration distribution function of the acid in the photoresist; creating a formula for calculating concentration diffusion of the developing solution based on the concentration distribution function of the developing solution to calculate diffusion results of developing solutions in different concentrations; simulating a development process through the formula for calculating concentration diffusion of the developing solution to obtain a pattern of simulated negative tone development photoresist after development; and comparing relevant data of the pattern of simulated negative tone development photoresist with that of a preset patter

Abstract: The method for full-chip quick simulation of negative tone development photolithography process, analyze the elastic deformation of the photoresist based on elastic mechanics, sets one of the stress and strain variables as an equivalent of a deformation of the photoresist, to obtain an equivalent equation, performs an approximate calculation of the equivalent equation using a Taylor expansion formula to obtain an approximate value of stress or strain, and adjusts the light field distribution according to the approximate value to obtain an appropriate acid concentration distribution, which can make the exposed image closest to a target image. It can effectively analyze the deformation of the photoresist during the thermal shrinkage effect process and improve the accuracy of the lithography calculation process. At the same time, the Taylor expansion is used to fit the thermal shrinkage effect, which can improve the calculation speed.

Abstract: The method for simulation of negative tone development photolithography process, includes following steps: S1, divide a selected photoresist region into finite elements to obtain a plurality of lattice units based on a finite element analysis method; S2, set deformation of photoresist as elastic deformation, equivalent an irradiation effect of a light field on the lattice units to a force, perform stress analysis on a lattice unit based on elastic mechanics, generate a unit stiffness matrix of each lattice unit based on a relationship between stress and strain, and form an overall stiffness matrix of the photoresist region based on generated unit stiffness matrix of each lattice unit; S3, define the stresses on nodes of each lattice unit as node forces, obtain equivalent node forces of each lattice unit, and obtain overall node forces matrix of the photoresist region based on obtained equivalent node forces; S4, solve the overall stiffness matrix and the overall node force matrix, and calculate an overall dis