Patents by Inventor Shilpi Vaypayee

Shilpi Vaypayee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing high resistivity SOI substrate with reduced interface conductivity
    Patent number: 9209069
    Abstract: A method of preparing a high resistivity single crystal semiconductor handle wafer comprising implanting He ions through a front surface of the high resistivity single crystal semiconductor handle wafer, which is followed by an anneal sufficient to form a nanocavity layer in the damage region formed by He ion implantation. The anneal may be prior to or concurrent with thermal oxidation to prepare a front oxidized surface layer.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: December 8, 2015
    Assignee: SunEdison Semiconductor Limited (UEN201334164H)
    Inventors: Jeffrey L. Libbert, Shilpi Vaypayee
  • METHOD OF MANUFACTURING HIGH RESISTIVITY SOI SUBSTRATE WITH REDUCED INTERFACE CONDUCITIVITY
    Publication number: 20150104926
    Abstract: A method of preparing a high resistivity single crystal semiconductor handle wafer comprising implanting He ions through a front surface of the high resistivity single crystal semiconductor handle wafer, which is followed by an anneal sufficient to form a nanocavity layer in the damage region formed by He ion implantation. The anneal may be prior to or concurrent with thermal oxidation to prepare a front oxidized surface layer.
    Type: Application
    Filed: October 9, 2014
    Publication date: April 16, 2015
    Inventors: Jeffrey L. Libbert, Shilpi Vaypayee