Patents by Inventor Shi-Ming Yang

Shi-Ming Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLYAMIDE-AMINE DENDRIMER OR DERIVATIVE THEREOF-MATH1 GENE NANO PARTICLE AND USE THEREOF IN TREATMENT OF HEARING LOSS
    Publication number: 20140004196
    Abstract: Polyamidoamine, its partially degraded products or its complexes-Math1 gene nanoparticles, method for preparing the same and use thereof, the gene nanoparticles can be produced through complex coacervating of polyamidoamine, or polyamidoamine complexes and a Math1 gene-containing plasmid. The gene nanoparticles are controllable in particle size, uniform in size, favorable for surface modification, can enhance the ability of expression and delivery of the Math1 gene, and is useful in a sensorineural hearing loss caused by hair cells loss due to noise, drug toxicity etc.
    Type: Application
    Filed: January 4, 2012
    Publication date: January 2, 2014
    Inventors: Shi-Ming Yang, Nan Wu, Yan Wu, Dong Han, Wei-Wei Guo, Li-Dong Zhao, Suo-Quiang Zhai, Wei-Quiang Gao, Wei-Yen Young
  • Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
    Patent number: 7285800
    Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: October 23, 2007
    Assignee: Supernova Optoelectronics Corporation
    Inventors: Mu-Jen Lai, Shi-Ming Yang, Chi-Feng Chan, Schang Jing Hon, Jenn-Bin Huang, Hsueh-Feng Sun
  • Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
    Publication number: 20060267027
    Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.
    Type: Application
    Filed: July 13, 2006
    Publication date: November 30, 2006
    Inventors: Mu-Jen Lai, Schang-Jing Hon, Jenn-Bin Huang, Chi-Feng Chan, Hsueh-Feng Sun, Shi-Ming Yang
  • Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
    Publication number: 20060054898
    Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.
    Type: Application
    Filed: November 12, 2004
    Publication date: March 16, 2006
    Inventors: Mu-Jen Lai, Shi-Ming Yang, Chi-Feng Chan, Schang Hon, Jenn-Bin Huang, Hsueh-Feng Sun