Abstract: A composition of materials (record carrier) with ferromagnetic and quantum-optical properties has been discovered, which can be used as an environment for accumulation with high-density recording of discrete information. In the preferred version, the composition of materials of record carrier (100,110,120,140,160,170 and 180) comprises a first amorphous layer of Ni.sub.(1-x-y) Fe.sub.x Mo.sub.y, a second polycrystalline layer of Co.sub.(1-z-w) Nb.sub.z V.sub.w, and a third polycrystalline layer of Co.sub.(1-j) Nb.sub.j, where x, y, z, w and j are values preferably within the ranges of 0.11<x<0.13; 0.075<y<0.085; 0.145<z<0.155; 0.095<w<0.105. Additionally, the layers also contain the following elements: Si, O, Ar, N, I. A random-access, non-volatile memory cell built using the invented composition of materials (record carrier) has also been discovered and a new non-volatile memory cell has been discovered, where, while information is read, a magnetic quantum-optical effect is used.

Abstract: A composition of materials having ferromagnetic and piezoelectric properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Fe.sub.y and a second layer of Cr.sub.(1-z-w) Zn.sub.z Te.sub.w where x, y, z and w are values within the ranges of 0.38.ltoreq.x.ltoreq.0.042, 0.08.ltoreq.y.ltoreq.0.094, 0.38.ltoreq.z.ltoreq.0.41, 0.28.ltoreq.w.ltoreq.0.31, and 0.25.ltoreq.(1-z-w).ltoreq.0.32. Additionally, each of the layers contain the elements of Bi, O, and S. A random-accessible, non-volatile memory built using the This memory provides for storing two independent bits of binary information in a single storage cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.

Abstract: A composition of materials having ferromagnetic, piezoelectric, and electro-optical. properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w, where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell.

Abstract: A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w, where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell.

Abstract: A composition of materials having ferromagnetic and piezoelectric properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Fe.sub.y and a second layer of Cr.sub.(1-z-w) Zn.sub.z Te.sub.w where x, y, z and w are values within the ranges of 0.38.ltoreq.x.ltoreq.0.042, 0.08.ltoreq.y.ltoreq.0.094, 0.38.ltoreq.z.ltoreq.0.41, 0.28.ltoreq.w.ltoreq.0.31, and 0.25.ltoreq.(1-z-w).ltoreq.0.32. Additionally, each of the layers contain the elements of Bi, O and S. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single storage cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials.

Abstract: A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb(.sub.1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w , where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell.

Abstract: A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w, where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell.