Patents by Inventor Shimon Maimon

Shimon Maimon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11264528
    Abstract: A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: March 1, 2022
    Inventor: Shimon Maimon
  • Publication number: 20220052221
    Abstract: A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.
    Type: Application
    Filed: August 17, 2017
    Publication date: February 17, 2022
    Inventor: Shimon Maimon
  • Patent number: 11245048
    Abstract: A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.
    Type: Grant
    Filed: November 25, 2018
    Date of Patent: February 8, 2022
    Inventor: Shimon Maimon
  • Publication number: 20210190962
    Abstract: Several embodiments of an apparatuses and method for sensing objects in a volume of interest are provided, including optionally sensing weather phenomena such as snow, ice, fog and the like by illuminating the volume with a laser pulse which is highly absorbed by the phenomenon and another laser pulse which is highly reflected, and sensing phenomenon presence by the returned pulses. Another aspect involves LIDAR utilizing a plurality of wavelengths. Further aspect include apparatus combining LIDAR and thermal imaging utilizing a single photodetector biased at different polarities to switch between the LIDAR and thermal imaging modes, providing a 3D thermal map of the volume of interest. All features may be combined in a single embodiment of the invention, or various aspects may be combined at will. A dual polarity photodetector for use in such combined LIDAR and thermal imager is also provided. Methods of using various embodiments are also provided.
    Type: Application
    Filed: January 5, 2021
    Publication date: June 24, 2021
    Inventors: Shimon MAIMON, Itai MAIMON, Ory Amos-Haim MAIMON, Ronit SASON-MAIMON
  • Publication number: 20190115490
    Abstract: A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.
    Type: Application
    Filed: November 25, 2018
    Publication date: April 18, 2019
    Inventor: Shimon Maimon
  • Publication number: 20170358701
    Abstract: A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.
    Type: Application
    Filed: August 17, 2017
    Publication date: December 14, 2017
    Inventor: Shimon Maimon
  • Patent number: 9766130
    Abstract: A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector having a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; and a contact layer comprising a doped semiconductor. A barrier layer is disposed between the photo absorbing layer and the contact layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: September 19, 2017
    Inventor: Shimon Maimon
  • Patent number: 9647155
    Abstract: The disclosure provides a photo-detection device for use in long-wave infrared detection and a method of fabrication. The device comprises a GaSb substrate, a photo absorbing layer comprising InAs/InAsSb superlattice type-II, a barrier layer comprising AlAsSb, and a contact layer comprising InAs/InAsSb superlattice type-II. The barrier layer is configured to allow minority carrier holes current flow while blocking majority carrier electrons current flow between the photo-absorbing and contact layers. The disclosure further provides a method of producing the photo-detector using photolithography which includes selective etching of the contact layer that stops on the top of the barrier so no etching is made to the barrier layer so the barrier may operate as a passivator too. The disclosure presents an x-ray and photoluminescence results for InAs/InAsSb superlattice type-II material.
    Type: Grant
    Filed: September 9, 2013
    Date of Patent: May 9, 2017
    Inventor: Shimon Maimon
  • Publication number: 20150372035
    Abstract: A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area.
    Type: Application
    Filed: August 10, 2015
    Publication date: December 24, 2015
    Inventor: Shimon Maimon
  • Patent number: 9117726
    Abstract: A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers.
    Type: Grant
    Filed: August 12, 2013
    Date of Patent: August 25, 2015
    Inventor: Shimon Maimon
  • Publication number: 20140159188
    Abstract: A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers.
    Type: Application
    Filed: August 12, 2013
    Publication date: June 12, 2014
    Inventor: Shimon Maimon
  • Publication number: 20110309410
    Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Application
    Filed: June 24, 2011
    Publication date: December 22, 2011
    Inventor: Shimon Maimon
  • Patent number: 8003434
    Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: August 23, 2011
    Inventor: Shimon Maimon
  • Publication number: 20110156097
    Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Application
    Filed: February 23, 2011
    Publication date: June 30, 2011
    Inventor: Shimon Maimon
  • Publication number: 20100159631
    Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Application
    Filed: February 16, 2010
    Publication date: June 24, 2010
    Inventor: Shimon Maimon
  • Patent number: 7687871
    Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Grant
    Filed: March 19, 2006
    Date of Patent: March 30, 2010
    Inventor: Shimon Maimon
  • Publication number: 20070215900
    Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Application
    Filed: March 19, 2006
    Publication date: September 20, 2007
    Inventor: Shimon Maimon
  • Patent number: 6480265
    Abstract: Apparatus for determining a distance of a target, the apparatus comprising a pulse transmitter, a gatable beam detector, and a comparator, the gatable beam detector being operable to obtain gated and calibration beam energy information of a pulse transmitted by the beam pulse transmitter for reflection from the target, and to pass the beam energy information to the comparator, thereby to obtain a ratio between the gated and the calibration beam energy, the ratio being inversely proportional to the distance. Also an array thereof for simultaneously obtaining distances of a multiplicity of points of a three-dimensional object in real time, in particular to obtain movement information of the target.
    Type: Grant
    Filed: March 26, 2001
    Date of Patent: November 12, 2002
    Assignee: Deep Optic Ltd.
    Inventors: Shimon Maimon, Eli Benoliel
  • Patent number: RE48642
    Abstract: A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers.
    Type: Grant
    Filed: July 4, 2019
    Date of Patent: July 13, 2021
    Inventor: Shimon Maimon
  • Patent number: RE48693
    Abstract: A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector having a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; and a contact layer comprising a doped semiconductor. A barrier layer is disposed between the photo absorbing layer and the contact layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Grant
    Filed: July 4, 2019
    Date of Patent: August 17, 2021
    Inventor: Shimon Maimon