Patents by Inventor Shimpei KINOSHITA

Shimpei KINOSHITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230416090
    Abstract: Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.
    Type: Application
    Filed: September 10, 2023
    Publication date: December 28, 2023
    Applicant: NICHIA CORPORATION
    Inventors: Shimpei KINOSHITA, Shoji HOSOKAWA
  • Patent number: 11807528
    Abstract: Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: November 7, 2023
    Assignee: NICHIA CORPORATION
    Inventors: Shimpei Kinoshita, Shoji Hosokawa
  • Publication number: 20220315837
    Abstract: Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.
    Type: Application
    Filed: March 29, 2022
    Publication date: October 6, 2022
    Applicant: NICHIA CORPORATION
    Inventors: Takayuki SHINOHARA, Shimpei KINOSHITA
  • Publication number: 20200198968
    Abstract: Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 25, 2020
    Applicant: NICHIA CORPORATION
    Inventors: Shimpei KINOSHITA, Shoji HOSOKAWA