Patents by Inventor Shimpei OHNISHI

Shimpei OHNISHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240322035
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes: a vertical transistor; and a semiconductor layer, forming a portion of the vertical transistor. The semiconductor layer includes: a first doped layer; a second doped layer, formed on the first doped layer; and a third doped layer, formed on the second doped layer. An impurity concentration of a first conductivity type of the first doped layer is greater than an impurity concentration of the first conductivity type of the third doped layer, and an impurity concentration of the first conductivity type of the second doped layer is less than the impurity concentration of the first conductivity type of the third doped layer.
    Type: Application
    Filed: March 20, 2024
    Publication date: September 26, 2024
    Applicant: ROHM CO., LTD.
    Inventor: Shimpei OHNISHI
  • Publication number: 20230261043
    Abstract: A semiconductor device includes a first conductivity type semiconductor layer having a first surface and a second surface opposite to the first surface and having an element portion formed in the first surface and an outer peripheral portion surrounding the element portion, a semiconductor element structure formed in the element portion, multiple guard ring trenches formed in the outer peripheral portion and each formed in the first surface of the semiconductor layer, and a second conductivity type outer peripheral portion impurity region formed in the outer peripheral portion, in which the multiple guard ring trenches include a first unit consisting of multiple guard ring trenches and a second unit consisting of multiple guard ring trenches arranged on the outside of the semiconductor layer relative to the multiple guard ring trenches belonging to the first unit, and in which the outer peripheral portion impurity region includes a first portion arranged below the multiple guard ring trenches belonging to the
    Type: Application
    Filed: April 21, 2023
    Publication date: August 17, 2023
    Inventors: Shimpei OHNISHI, Masaki NAGATA
  • Patent number: 11670674
    Abstract: A semiconductor device includes a first conductivity type semiconductor layer having a first surface and a second surface opposite to the first surface and having an element portion formed in the first surface and an outer peripheral portion surrounding the element portion, a semiconductor element structure formed in the element portion, multiple guard ring trenches formed in the outer peripheral portion and each formed in the first surface of the semiconductor layer, and a second conductivity type outer peripheral portion impurity region formed in the outer peripheral portion, in which the multiple guard ring trenches include a first unit consisting of multiple guard ring trenches and a second unit consisting of multiple guard ring trenches arranged on the outside of the semiconductor layer relative to the multiple guard ring trenches belonging to the first unit, and in which the outer peripheral portion impurity region includes a first portion arranged below the multiple guard ring trenches belonging to the
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: June 6, 2023
    Assignee: ROHM CO., LTD.
    Inventors: Shimpei Ohnishi, Masaki Nagata
  • Publication number: 20210328008
    Abstract: A semiconductor device includes a first conductivity type semiconductor layer having a first surface and a second surface opposite to the first surface and having an element portion formed in the first surface and an outer peripheral portion surrounding the element portion, a semiconductor element structure formed in the element portion, multiple guard ring trenches formed in the outer peripheral portion and each formed in the first surface of the semiconductor layer, and a second conductivity type outer peripheral portion impurity region formed in the outer peripheral portion, in which the multiple guard ring trenches include a first unit consisting of multiple guard ring trenches and a second unit consisting of multiple guard ring trenches arranged on the outside of the semiconductor layer relative to the multiple guard ring trenches belonging to the first unit, and in which the outer peripheral portion impurity region includes a first portion arranged below the multiple guard ring trenches belonging to the
    Type: Application
    Filed: June 30, 2021
    Publication date: October 21, 2021
    Inventors: Shimpei OHNISHI, Masaki NAGATA
  • Patent number: 11081545
    Abstract: A semiconductor device includes a first conductivity type semiconductor layer having a first surface and a second surface opposite to the first surface and having an element portion formed in the first surface and an outer peripheral portion surrounding the element portion, a semiconductor element structure formed in the element portion, multiple guard ring trenches formed in the outer peripheral portion and each formed in the first surface of the semiconductor layer, and a second conductivity type outer peripheral portion impurity region formed in the outer peripheral portion, in which the multiple guard ring trenches include a first unit consisting of multiple guard ring trenches and a second unit consisting of multiple guard ring trenches arranged on the outside of the semiconductor layer relative to the multiple guard ring trenches belonging to the first unit, and in which the outer peripheral portion impurity region includes a first portion arranged below the multiple guard ring trenches belonging to the
    Type: Grant
    Filed: February 5, 2020
    Date of Patent: August 3, 2021
    Assignee: ROHM CO., LTD.
    Inventors: Shimpei Ohnishi, Masaki Nagata
  • Publication number: 20200266270
    Abstract: A semiconductor device includes a first conductivity type semiconductor layer having a first surface and a second surface opposite to the first surface and having an element portion formed in the first surface and an outer peripheral portion surrounding the element portion, a semiconductor element structure formed in the element portion, multiple guard ring trenches formed in the outer peripheral portion and each formed in the first surface of the semiconductor layer, and a second conductivity type outer peripheral portion impurity region formed in the outer peripheral portion, in which the multiple guard ring trenches include a first unit consisting of multiple guard ring trenches and a second unit consisting of multiple guard ring trenches arranged on the outside of the semiconductor layer relative to the multiple guard ring trenches belonging to the first unit, and in which the outer peripheral portion impurity region includes a first portion arranged below the multiple guard ring trenches belonging to the
    Type: Application
    Filed: February 5, 2020
    Publication date: August 20, 2020
    Inventors: Shimpei OHNISHI, Masaki NAGATA