Abstract: A high-strength steel sheet of the present invention has a specific chemical composition. Furthermore, in the steel sheet, a degree of Mn segregation in a specific region is 1.5 or less; a maximum P concentration in a specific region is 0.08 mass % or less; in a specific region, at least one specific MnS particle group is present, the number of specific MnS particle groups is 2.0 or fewer per 1 mm2, and the number of specific oxide-based inclusions is 8 or fewer per 1 mm2; of all oxide-based inclusions, oxide-based inclusions having a specific composition are present in a number ratio of 80% or greater; the microstructure includes, in terms of a volume fraction, 30 to 95% martensite, 5 to 70% ferrite phase, less than 30% (and 0% or greater) bainite, and less than 2.0% (and 0% or greater) austenite phase; and a tensile strength is 980 MPa or greater.

Abstract: A vibration energy harvester includes: a pair of electrodes provided so as to face opposite each other, with at least one of the pair of electrodes allowed to move; and an ion gel provided between the pair of electrodes, which is formed by using an ionic liquid, wherein: as an external vibration causes the electrode to move along a direction in which a distance between the pair of electrodes changes, power is generated through a change in an area of an electric double layer formed on two sides of an interface of each electrode and the ion gel.

Abstract: A vibration energy harvester includes: a pair of electrodes provided so as to face opposite each other, with at least one of the pair of electrodes allowed to move; and an ion gel provided between the pair of electrodes, which is formed by using an ionic liquid, wherein: as an external vibration causes the electrode to move along a direction in which a distance between the pair of electrodes changes, power is generated through a change in an area of an electric double layer formed on two sides of an interface of each electrode and the ion gel.

Abstract: An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.

Abstract: An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.