Patents by Inventor Shin Asari
Shin Asari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10000850Abstract: A catalytic chemical vapor deposition apparatus comprising a catalyst wire including a tantalum wire and a boride layer formed on a surface of the tantalum wire is used. The boride of the metal tantalum (tantalum boride) is harder than the metal tantalum. Therefore, by using the tantalum wire having the boride layer formed on the surface thereof as a catalyst wire, it is possible to reduce thermal expansion of the catalyst wire, improve mechanical strength, and prolong the service life. Further, by performing energization heating of the catalyst wire by continuous energization, it is further possible to prolong the service life of the catalyst wire.Type: GrantFiled: November 12, 2015Date of Patent: June 19, 2018Assignee: Ulvac, Inc.Inventors: Shuji Osono, Masanori Hashimoto, Shin Asari
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Publication number: 20160060764Abstract: A catalytic chemical vapor deposition apparatus comprising a catalyst wire including a tantalum wire and a boride layer formed on a surface of the tantalum wire is used. The boride of the metal tantalum (tantalum boride) is harder than the metal tantalum. Therefore, by using the tantalum wire having the boride layer formed on the surface thereof as a catalyst wire, it is possible to reduce thermal expansion of the catalyst wire, improve mechanical strength, and prolong the service life. Further, by performing energization heating of the catalyst wire by continuous energization, it is further possible to prolong the service life of the catalyst wire.Type: ApplicationFiled: November 12, 2015Publication date: March 3, 2016Inventors: Shuji OSONO, Masanori HASHIMOTO, Shin ASARI
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Patent number: 8673705Abstract: [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor. [Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided.Type: GrantFiled: December 12, 2008Date of Patent: March 18, 2014Assignee: Ulvac, Inc.Inventors: Taro Morimura, Toru Kikuchi, Masanori Hashimoto, Shin Asari, Kazuya Saito, Kyuzo Nakamura
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Publication number: 20120145184Abstract: A self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. Conductors supply a constant current to a catalytic body within a reaction chamber from a heating power supply. Terminals of the heating power supply are electrically insulated from the reaction chamber. A cleaning gas containing halogen elements is introduced into the evacuated reaction chamber. The catalytic body is heated by the heating power supply. An active species generated by this heating reacts with an adhering film adhered to the interior of the reaction chamber, which is removed. During this removal, a DC bias voltage with appropriate polarity and appropriate value is applied from a constant-voltage power supply to the conductor of the heating power supply.Type: ApplicationFiled: February 16, 2012Publication date: June 14, 2012Applicant: ULVAC, INC.Inventors: Makiko KITAZOE, Shuji Osono, Hiromi Itoh, Kazuya Saito, Shin Asari
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Publication number: 20120034731Abstract: A photoelectric conversion device manufacturing system in which a photoelectric conversion device is manufactured, the photoelectric conversion device including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer which are sequentially layered on a transparent-electroconductive film formed on a substrate in the photoelectric conversion device.Type: ApplicationFiled: April 6, 2010Publication date: February 9, 2012Applicant: ULVAC, INC.Inventors: Takafumi Noguchi, Hideyuki Ogata, Katsuhiko Mori, Yasuo Shimizu, Hiroto Uchida, Shin Asari
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Publication number: 20120015473Abstract: A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer.Type: ApplicationFiled: January 29, 2010Publication date: January 19, 2012Applicant: ULVAC, INC.Inventors: Hiroto Uchida, Tetsushi Fujinaga, Masafumi Wakai, Tadamasa Kobayashi, Yoshinobu Ue, Kyuzo Nakamura, Shin Asari, Kazuya Saito, Koichi Matsumoto, Yasuo Shimizu, Katsuhiko Mori
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Publication number: 20110232573Abstract: [Object] To provide a catalytic chemical vapor deposition apparatus capable of prolonging the service life of a catalyst wire. [Solving Means] In a catalytic chemical vapor deposition apparatus (1) according to the present invention, a catalyst wire (6) including a tantalum wire and a boride layer formed on a surface of the tantalum wire is used. The boride of the metal tantalum (tantalum boride) is harder than the metal tantalum. Therefore, by using the tantalum wire having the boride layer formed on the surface thereof as a catalyst wire, it is possible to reduce thermal expansion of the catalyst wire, improve mechanical strength, and prolong the service life. Further, by performing energization heating of the catalyst wire (6) by continuous energization, it is further possible to prolong the service life of the catalyst wire (6).Type: ApplicationFiled: December 9, 2008Publication date: September 29, 2011Applicant: ULVAC, INC.Inventors: Shuji Osono, Masanori Hashimoto, Shin Asari
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Publication number: 20110204466Abstract: A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.Type: ApplicationFiled: August 28, 2009Publication date: August 25, 2011Applicant: ULVAC, INC.Inventors: Shinichi Asahina, Hirota Uchida, Shin Asari, Masanori Hashimoto, Tetsushi Fujinaga, Tadamasa Kobayashi, Masafumi Wakai, Kenichi Imakita, Yoshinobu Ue, Kazuya Saito, Kyuzo Nakamura
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Publication number: 20110180402Abstract: To provide a vacuum processing apparatus capable of supporting and conveying a substrate by a method suitable for a processing content in each processing step and capable of suppressing various mechanisms provided within a processing chamber from being adversely affected. More particularly, the CVD chamber of the apparatus is configured to be horizontal, and hence the above-mentioned problem can be solved. Further, by configuring a sputtering apparatus as the vertical type processing apparatus, problems with abnormal electrical discharge can be solved.Type: ApplicationFiled: October 7, 2009Publication date: July 28, 2011Applicant: ULVAC, INC.Inventors: Takaomi Kurata, Junya Kiyota, Makoto Arai, Yasuhiko Akamatsu, Satoru Ishibashi, Shin Asari, Kazuya Saito, Shigemitsu Sato, Masashi Kikuchi
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Publication number: 20110030780Abstract: A solar cell includes: a substrate having optical transparency; a photoelectric converter provided on the substrate, including a top-face electrode having optical transparency, a photoelectric conversion layer, and a back-face electrode having light reflectivity; and a low-refractive conductive layer whose refractive index is less than or equal to 2.0, the low-refractive conductive layer being made of a conductive material having optical transparency, being adjacent to the photoelectric conversion layer, and being disposed on a side of the photoelectric conversion layer opposite to the substrate.Type: ApplicationFiled: April 24, 2009Publication date: February 10, 2011Applicant: ULVAC, INC.Inventors: Miwa Watai, Kazuya Saito, Takashi Komatsu, Yoshio Ide, Shin Asari, Yusuke Mizuno, Miho Shimizu
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Publication number: 20100330363Abstract: A resin substrate of the present invention has a resin layer and a surface layer formed on a surface of the resin layer, wherein the surface layer is a layer comprising silicon nitride as a main component and deposited by the chemical vapor deposition method, and at the interface between the resin layer and the surface layer, at the interface between the resin layer and the surface layer, an interfacial region over which a percentage changes from 80% to 20% has a thickness of not more than 25 nm, wherein the difference between the maximum nitrogen concentration in the surface layer and the steady-state nitrogen concentration in the resin layer is taken as 100%. The surface layer has an average surface roughness (Ra) of not more than 1 nm. The resin substrate has properties of water vapor barrier and surface flatness.Type: ApplicationFiled: June 27, 2008Publication date: December 30, 2010Applicants: ULVAC, INC., UBE INDUSTRIES, LTD.Inventors: Tetsushi Fujinaga, Makiko Takagi, Masanori Hashimoto, Shin Asari, Ryuji Oyama
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Publication number: 20100301339Abstract: [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor. [Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided.Type: ApplicationFiled: December 12, 2008Publication date: December 2, 2010Applicant: ULVAC, INC.Inventors: Taro Morimura, Toru Kikuchi, Masanori Hashimoto, Shin Asari, Kazuya Saito, Kyuzo Nakamura
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Publication number: 20080050523Abstract: To provide a unit-layer post-treatment catalyst vapor-deposition apparatus and unit-layer post-treatment film forming method capable of improving in-face uniformity, step coverage, and film quality of a silicon nitride film or the like and forming a thin film by performing surface treatment after forming a film for each unit layer.Type: ApplicationFiled: March 25, 2005Publication date: February 28, 2008Inventors: Makiko Kitazoe, Hiromi Itho, Shin Asari, Kazuya Saito
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Publication number: 20070209677Abstract: Provided is a self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. With conductors 5a, 5b which supply a constant current to a catalytic body 4 within a reaction chamber 2 from a heating power supply 6 and terminals 6a, 6b of the heating power supply 6 kept electrically insulated from the reaction chamber 2, a cleaning gas containing halogen elements is introduced into the reaction chamber 2 which has been evacuated, and the catalytic body 4 is heated by the energization from the heating power supply 6. An active species generated by this heating is caused to react with an adhering film which adheres to the interior of the reaction chamber 2, whereby the adhering film is removed.Type: ApplicationFiled: March 10, 2005Publication date: September 13, 2007Inventors: Makiko Kitazoe, Shuji Osono, Hiromi Itoh, Kazuya Saito, Shin Asari
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Publication number: 20040007247Abstract: In a plasma film-forming apparatus which includes a film-forming chamber in which a substrate is arranged, a film-forming gas introducing pipe connected to a supply source of a film-forming gas at its first end, a shower plate through numerous holes of which a second end of said film-forming gas introducing pipe communicate with said film-forming chamber, film-gas exciting means for exciting film-forming gas introduced through said shower plate into said film-forming chamber, to form a film on the surface of said substrate with the chemical reaction, radicals-producing means which excites said cleaning gas and produces radicals, and cleaning-gas introducing means which introduces said cleaning gas containing said radicals into said film-forming chamber, the improvement in which said cleaning-gas introducing means communicate directly with said film-forming chamber.Type: ApplicationFiled: May 28, 2003Publication date: January 15, 2004Applicant: ULVAC, Inc.Inventors: Shin Asari, Naoto Tsuji, Takaomi Kurata, Kazuaki Yamauchi, Masanori Hashimoto, Michio Ishikawa, Masayasu Hirata, Katsuhiko Mori
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Publication number: 20020124866Abstract: In a plasma film-forming apparatus which includes a film-forming chamber in which a substrate is arranged, a film-forming gas introducing pipe connected to a supply source of a film-forming gas at its first end, a shower plate through numerous holes of which a second end of said film-forming gas introducing pipe communicate with said film-forming chamber, film-gas exciting means for exciting film-forming gas introduced through said shower plate into said film-forming chamber, to form a film on the surface of said substrate with the chemical reaction, radicals-producing means which excites said cleaning gas and produces radicals, and cleaning-gas introducing means which introduces said cleaning gas containing said radicals into said film-forming chamber, the improvement in which said cleaning-gas introducing means communicate directly with said film-forming chamber.Type: ApplicationFiled: August 17, 2001Publication date: September 12, 2002Applicant: ULVAC, Inc.Inventors: Shin Asari, Naoto Tsuji, Takaomi Kurata, Kazuaki Yamauchi, Masanori Hashimoto, Michio Ishikawa, Masayasu Hirata, Katsuhiko Mori
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Patent number: 4661420Abstract: An enhancement of the Kerr rotation angle is obtained in a magnetic recording member by providing an amorphous layer of Si, Ge, or alloy thereof. Such layer may further contain any of the following additional elements: H, C, F, N and O.Type: GrantFiled: February 5, 1985Date of Patent: April 28, 1987Assignee: Nihon Shinku Gijutsu Kabushiki KaishaInventors: Kyuzo Nakamura, Yoshifumi Ota, Shin Asari, Tsutomu Asaka