Abstract: Disclosed is a method of depositing thin films, the method comprising supplying a metal precursor to the inside of a chamber where a substrate is placed to adsorb the metal precursor onto the substrate; purging the inside of the chamber; supplying a reactant to the inside of the chamber to react with the adsorbed metal precursor and form a thin film, wherein the metal precursor includes one or more halogen groups and one or more organic ligands.

Abstract: A precursor for forming a silicon-containing thin film according to an embodiment of the present disclosure is a compound represented by the following Chemical Formula 1 or 2, in which in Chemical Formulas 1 and 2, A is a cycloalkyl group having 4 to 7 carbon atoms, R1, R4 and R5 are each independently selected from hydrogen; and a substituted or unsubstituted alkyl group having 1 to 3 carbon atoms, and R2, R3 and R6 are each independently an alkyl group having 1 or 2 carbon atoms. Accordingly, it is possible to provide a silicon-containing thin film with high hardness and low dielectric constant characteristics using a silicon precursor having an asymmetric structure containing a cycloalkyl group.

Abstract: According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1: In Chemical Formula 1, L1 and L2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.

Abstract: According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below: Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.

Abstract: According to examples of the present disclosure, the organometallic compound is represented by Formula 1 below, which is used as a precursor when a Group 4 metal-containing thin film is deposited to provide a high-quality Group 4 metal-containing thin film. In Formula 1, M is Zr or Hf, R1 is selected from a linear alkyl group having 2 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, R2 is a linear alkyl group having 1 to 3 carbon atoms, and R1 and R2 are different from each other.

Abstract: According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below: Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.

Abstract: According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1: In Chemical Formula 1, L1 and L2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.