Abstract: A method is provided which enables selectively leaching nickel and/or cobalt from an alloy that contains copper and nickel and/or cobalt in a waste lithium ion battery. This alloy processing method involves obtaining a solution that contains nickel and/or cobalt from an alloy that contains copper and nickel and/or cobalt, wherein the alloy processing method involves a leaching step for adding an acid solution to the alloy in a state in which a sulfurizing agent is also present, and obtaining a leachate and a leaching residue by performing leaching processing while controlling the redox potential (the reference electrode being a silver/silver chloride electrode) to at least 100 mV and less than 250 mV. In the leaching processing in the leaching step, an operation is performed that temporarily decreases the redox potential to less than or equal to ?100 mV.

Abstract: A method in certain embodiments includes using a computer system that includes an EDA tool to generate a layout of an IC device; searching, using a statistical method such as Bayesian optimization process, for one or more input variable parameters, such as the dimensions of the IC device and the dimensions of the voltage areas in the IC device, that results in an optimal characteristic, such as power, performance or area (PPA) of the IC device, subject to a limiting condition, such as one determined using a cost function. A computer system including one or more EDAs configured to perform the method is also disclosed.

Abstract: A method in certain embodiments includes using a computer system that includes an EDA tool to generate a layout of an IC device; searching, using a statistical method such as Bayesian optimization process, for one or more input variable parameters, such as the dimensions of the IC device and the dimensions of the voltage areas in the IC device, that results in an optimal characteristic, such as power, performance or area (PPA) of the IC device, subject to a limiting condition, such as one determined using a cost function. A computer system including one or more EDAs configured to perform the method is also disclosed.

Abstract: A semiconductor structure including a substrate, a dielectric layer, a first conductive layer, and a passivation layer is provided. The dielectric layer is disposed on the substrate. The first conductive layer is disposed on the dielectric layer. The passivation layer is disposed on the first conductive layer and the dielectric layer. The passivation layer includes a first upper surface and a second upper surface. The first upper surface is located above a top surface of the first conductive layer. The second upper surface is located on one side of the first conductive layer. A height of the first upper surface is higher than a height of the second upper surface. The height of the second upper surface is lower than or equal to a height of a lower surface of the first conductive layer located between a top surface of the dielectric layer and the first conductive layer.

Abstract: A method in certain embodiments includes using a computer system that includes an EDA tool to generate a layout of an IC device; searching, using a statistical method such as Bayesian optimization process, for one or more input variable parameters, such as the dimensions of the IC device and the dimensions of the voltage areas in the IC device, that results in an optimal characteristic, such as power, performance or area (PPA) of the IC device, subject to a limiting condition, such as one determined using a cost function. A computer system including one or more EDAs configured to perform the method is also disclosed.

Abstract: A semiconductor structure including a substrate, a dielectric layer, a first conductive layer, and a passivation layer is provided. The dielectric layer is disposed on the substrate. The first conductive layer is disposed on the dielectric layer. The passivation layer is disposed on the first conductive layer and the dielectric layer. The passivation layer includes a first upper surface and a second upper surface. The first upper surface is located above a top surface of the first conductive layer. The second upper surface is located on one side of the first conductive layer. A height of the first upper surface is higher than a height of the second upper surface. The height of the second upper surface is lower than or equal to a height of a lower surface of the first conductive layer located between a top surface of the dielectric layer and the first conductive layer.

Abstract: A method in certain embodiments includes using a computer system that includes an EDA tool to generate a layout of an IC device; searching, using a statistical method such as Bayesian optimization process, for one or more input variable parameters, such as the dimensions of the IC device and the dimensions of the voltage areas in the IC device, that results in an optimal characteristic, such as power, performance or area (PPA) of the IC device. A computer system including one or more EDAs configured to perform the method is also disclosed.

Abstract: A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a first heat conductive layer between the heat-spreading wall structure and the chip. The chip package structure includes a second heat conductive layer over the chip and surrounded by the first heat conductive layer. The chip package structure includes a heat-spreading lid over the substrate and covering the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.

Abstract: A method in certain embodiments includes using a computer system that includes an EDA tool to generate a layout of an IC device; searching, using a statistical method such as Bayesian optimization process, for one or more input variable parameters, such as the dimensions of the IC device and the dimensions of the voltage areas in the IC device, that results in an optimal characteristic, such as power, performance or area (PPA) of the IC device. A computer system including one or more EDAs configured to perform the method is also disclosed.

Abstract: A method for forming a chip package structure is provided. The method includes disposing a chip over a substrate. The method includes forming a heat-spreading wall structure over the substrate. The heat-spreading wall structure is adjacent to the chip, and there is a first gap between the chip and the heat-spreading wall structure. The method includes forming a first heat conductive layer in the first gap. The method includes forming a second heat conductive layer over the chip. The method includes disposing a heat-spreading lid over the substrate to cover the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.

Abstract: A method for forming a chip package structure is provided. The method includes disposing a chip over a substrate. The method includes forming a heat-spreading wall structure over the substrate. The heat-spreading wall structure is adjacent to the chip, and there is a first gap between the chip and the heat-spreading wall structure. The method includes forming a first heat conductive layer in the first gap. The method includes forming a second heat conductive layer over the chip. The method includes disposing a heat-spreading lid over the substrate to cover the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.

Abstract: Exemplary metal line structure and manufacturing method for a trench are provided. In particular, the metal line structure includes a substrate, a target layer, a trench and a conductor line. The target layer is formed on the substrate. The trench is formed in the target layer and has a micro-trench formed at the bottom thereof. A depth of the micro-trench is not more than 50 angstroms. The conductor line is inlaid into the trench.

Abstract: Exemplary metal line structure and manufacturing method for a trench are provided. In particular, the metal line structure includes a substrate, a target layer, a trench and a conductor line. The target layer is formed on the substrate. The trench is formed in the target layer and has a micro-trench formed at the bottom thereof. A depth of the micro-trench is not more than 50 angstroms. The conductor line is inlaid into the trench.

Abstract: A method of removing a fin structure includes providing a substrate. A fin structure extends from the substrate. A mask layer is disposed on a top surface of the fin structure. An organic dielectric layer covers the substrate, the fin structure and the mask layer. A first etching process is performed to entirely remove the mask layer by taking the organic dielectric layer as a mask. Then a second etching process is performed to remove the fin structure. The first etching process is preferably an anisotropic etching process, and the second etching process is an isotropic etching process.

Abstract: Exemplary metal line structure and manufacturing method for a trench are provided. In particular, the metal line structure includes a substrate, a target layer, a trench and a conductor line. The target layer is formed on the substrate. The trench is formed in the target layer and has a micro-trench formed at the bottom thereof. A depth of the micro-trench is not more than 50 angstroms. The conductor line is inlaid into the trench.

Abstract: A method of removing a fin structure includes providing a substrate. A fin structure extends from the substrate. A mask layer is disposed on a top surface of the fin structure. An organic dielectric layer covers the substrate, the fin structure and the mask layer. A first etching process is performed to entirely remove the mask layer by taking the organic dielectric layer as a mask. Then a second etching process is performed to remove the fin structure. The first etching process is preferably an anisotropic etching process, and the second etching process is an isotropic etching process.

Abstract: A semiconductor pattern structure includes a substrate, an input/output (I/O) region defined on the substrate, a core region defined on the substrate, a dummy region defined on the substrate, and a gate electrode formed on the substrate. The dummy region is formed between the I/O region and the core region. The gate electrode crosses the I/O region and covers a portion of the dummy region.

Abstract: In accordance with embodiments of the present disclosure, an information handling system may include heat-rejecting media thermally coupled to one or more information handling resources, a connector for receiving a modular information handling resource, the connector having a latch for facilitating insertion or removal of the modular information handling resource to or from the connector, and a removable baffle for directing a flow of air proximate to the heat-rejecting media. The removable baffle may have two substantially planar sides and an edge substantially perpendicular to the two planar sides, such that when the removable baffle is located within a chassis including the heat-rejecting media and the connector, the latch engages with the edge to mechanically maintain a location of the removable baffle within the chassis.

Abstract: In accordance with embodiments of the present disclosure, an information handling system may include heat-rejecting media thermally coupled to one or more information handling resources, a connector for receiving a modular information handling resource, the connector having a latch for facilitating insertion or removal of the modular information handling resource to or from the connector, and a removable baffle for directing a flow of air proximate to the heat-rejecting media. The removable baffle may have two substantially planar sides and an edge substantially perpendicular to the two planar sides, such that when the removable baffle is located within a chassis including the heat-rejecting media and the connector, the latch engages with the edge to mechanically maintain a location of the removable baffle within the chassis.

Abstract: An Li-containing ?-sialon-based phosphor represented by the formula (1): LixEuySi12?(m+n)Al(m+n)On+?N16?n?? (wherein assuming that average valence of Eu is a, x+ya+?=m; 0.45?x<1.2, 0.001?y?0.2, 0.9?m?2.5, 0.5?n?2.4, and ?>0).