Patents by Inventor Shin-Chih Liaw
Shin-Chih Liaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8464734Abstract: An exemplary apparatus for wet processing a substantially rectangular substrate includes a conveyor, a supporting mechanism, an adjusting mechanism, a processing module and a dosing system. The conveyor is configured for conveying the substrate to a wet process work station. The supporting mechanism is configured for supporting the substrate away from the conveyor. The adjusting mechanism is configured for adjusting the orientation of the substrate. The processing module is configured for obtaining an area of a surface of the substrate. The dosing system communicates with the processing unit, and is configured for dispensing a corresponding amount of wet processing liquid to the substrate to wet process the substrate according to the area of the surface of the substrate from the processing module.Type: GrantFiled: December 14, 2009Date of Patent: June 18, 2013Assignee: Zhen Ding Technology Co., Ltd.Inventors: Wen-Tsun Chen, Shin-Chih Liaw, Tao-Ming Liao, Chia-Hung Shen, Yun-Fei Lien
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Patent number: 8281741Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle ?2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.Type: GrantFiled: February 1, 2011Date of Patent: October 9, 2012Assignee: Industrial Technology Research InstituteInventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
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Patent number: 8062580Abstract: An apparatus for recycling metals from metal ions containing waste solution includes a conveying device, a reducing agent supplier and a solution supplier. The conveying device includes a first ferromagnetic conveyor belt, a first roller, and a second roller. The first and second rollers are substantially horizontally arranged, and the second roller is arranged at a lower position relative to the first roller and spaced from the first roller. The ferromagnetic conveyor belt is wrapped around the first and second rollers. The reducing agent supplier is used for supplying a reducing agent onto the first conveyor belt, the ferromagnetic conveyor belt is capable of conveying the reducing agent from the second roller to the first roller. The solution supplier is configured for supplying the waste solution onto the first conveyor belt.Type: GrantFiled: August 5, 2009Date of Patent: November 22, 2011Assignee: Zhen Ding Technology Co., Ltd.Inventors: Wen-Tsun Chen, Shin-Chih Liaw, Tao-Ming Liao, Chia-Hung Shen, Cheng-Hsien Lin
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Publication number: 20110120372Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle ?2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.Type: ApplicationFiled: February 1, 2011Publication date: May 26, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
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Patent number: 7923076Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle ?2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.Type: GrantFiled: December 21, 2006Date of Patent: April 12, 2011Assignee: Industrial Technology Research InstituteInventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
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Publication number: 20100170639Abstract: An exemplary apparatus for wet processing a substantially rectangular substrate includes a conveyor, a supporting mechanism, an adjusting mechanism, a processing module and a dosing system. The conveyor is configured for conveying the substrate to a wet process work station. The supporting mechanism is configured for supporting the substrate away from the conveyor. The adjusting mechanism is configured for adjusting the orientation of the substrate. The processing module is configured for obtaining an area of a surface of the substrate. The dosing system communicates with the processing unit, and is configured for dispensing a corresponding amount of wet processing liquid to the substrate to wet process the substrate according to the area of the surface of the substrate from the processing module.Type: ApplicationFiled: December 14, 2009Publication date: July 8, 2010Applicant: FOXCONN ADVANCED TECHNOLOGY INC.Inventors: Wen-Tsun Chen, Shin-Chih Liaw, Tao-Ming Liao, Chia-Hung Shen, Yun-Fei Lien
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Publication number: 20100059910Abstract: An apparatus for recycling metals from metal ions containing waste solution includes a conveying device, a reducing agent supplier and a solution supplier. The conveying device includes a first ferromagnetic conveyor belt, a first roller, and a second roller. The first and second rollers are substantially horizontally arranged, and the second roller is arranged at a lower position relative to the first roller and spaced from the first roller. The ferromagnetic conveyor belt is wrapped around the first and second rollers. The reducing agent supplier is used for supplying a reducing agent onto the first conveyor belt, the ferromagnetic conveyor belt is capable of conveying the reducing agent from the second roller to the first roller. The solution supplier is configured for supplying the waste solution onto the first conveyor belt.Type: ApplicationFiled: August 5, 2009Publication date: March 11, 2010Applicant: FOXCONN ADVANCED TECHNOLOGY INC.Inventors: WEN-TSUN CHEN, SHIN-CHIH LIAW, TAO-MING LIAO, CHIA-HUNG SHEN, CHENG-HSIEN LIN
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Publication number: 20080032063Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle ?2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.Type: ApplicationFiled: December 21, 2006Publication date: February 7, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUEInventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin