Abstract: The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.

Abstract: The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.

Abstract: The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.

Abstract: A manufacture method of a semiconductor device, and more particularly to the manufacture method of a silicon/silicon-germanium heterogeneous bipolar transistor (HBT) device with ultra-thin base, which mainly utilized the method of doping carbon atoms in the silicon-germanium (SiGe) spacer layer in order to suppress the out-diffusion of boron, increase the amount of doped boron in base, germanium (Ge) concentration, and critical thickness, and decrease the thickness of silicon-germanium spacer layer, and achieve the objective of raising the device's high frequency property.

Abstract: Within an epitaxial base bipolar transistor device and a method for fabricating the epitaxial base bipolar transistor device there is provided: (1) a monocrystalline semiconductor substrate which serves as a collector, in turn having formed thereupon; (2) an epitaxial base layer. Within the epitaxial base bipolar transistor device and method, there is further employed: (1) a pair of inward facing spacers formed over the epitaxial base layer and defining, at least in part, an aperture having at its bottom a portion of the epitaxial base layer; and (2) a pair of outward facing spacers formed over the epitaxial base layer and laminated to a pair of sides of the pair of inward facing spacers opposite the aperture; such that (3) an emitter layer may be formed into the aperture and contacting the epitaxial base layer. The foregoing two pair of spacer layers provide for efficient fabrication of the epitaxial base bipolar transistor device, with enhanced process latitude.

Abstract: The present invention solves the problem of how to form local regions of semi-insulating material within a single crystal substrate. It does this by irradiating the semiconductor with a high energy beam capable of producing radiation damage along its path. As a consequence of such radiation damage the resistivity of the semiconductor in the irradiated area is increased by several orders of magnitude, causing it to become semi-insulating. Semi-insulating regions of this type are effective as electrically isolating regions and can be used, for example, to decouple analog from digital circuits or to maintain high Q in integrated inductors after these devices have been made. The radiation used could be electromagnetic (such as X-rays or gamma rays) or it could comprise energetic particles such as protons, deuterons, etc. Confinement of the beam to local regions within the semiconductor is accomplished by means of suitable masks.