Abstract: A chip package includes a substrate, a semiconductor chip, and a thermal conductive structure. The chip package includes a first and a second support structures below the thermal conductive structure. The first and the second support structures connect the substrate and corners of the thermal conductive structure. The thermal conductive structure has a side edge connecting the first and the second support structures. The first and the second support structures and the side edge together define of an opening exposing a space surrounding the semiconductor chip. The first and the second support structures are disposed along a side of the substrate. The first support structure is laterally separated from the side of the substrate by a first lateral distance. The side edge of the thermal conductive structure is laterally separated from the side of the substrate by a second lateral distance different than the first lateral distance.

Abstract: The present invention provides a new packaging form of a semiconductor diode, which is fabricated by using low-temperature cofired ceramic (LTCC) technology. The fabrication method is low-cost and the resulting chip form semiconductor diode has good hermeticity and high reliability. The fabrication method includes the steps of: (a) providing a ceramic green tape having a through hole for positioning a diode die; (b) positioning a diode die in the through hole; (c) sandwiching the diode die between two ceramic green tapes having printed conductive layers facing the electrode surfaces of the diode die; (d) laminating the ceramic tapes into a compact such that the conductive layers connect to the electrodes of the diode die; (e) firing the laminated parts to form a monolithic sintered body; and (f) forming end terminals, and solder-plating the end terminals to finish a ceramic chip of the semiconductor diode.